摘要:
Crosslinkable polymers comprise recurring units represented by: wherein R, R′, and R″ are independently hydrogen or an alkyl, cyano, or halo group; R1 is hydrogen or a halo, substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, cyano, hydroxy, alkoxy, carboxy, or ester group; L is an organic linking group; EWG represents an electron withdrawing group having a Hammett-sigma value greater than or equal to 0.35 such that the oxygen-carbon bond in O—C(EWG)(R1) is cleavable in the presence of a cleaving acid having a pKa of 2 or less as measured in water; Ar is a substituted or unsubstituted arylene group; X is NR2 or oxygen; R2 is hydrogen or an alkyl group; t-alkyl represents a tertiary alkyl group having 4 to 6 carbon atoms, and m represents at least 1 mol % and up to and including 100 mol %, based on the total recurring units in the polymer.
摘要:
Crosslinkable polymers comprise recurring units represented by: wherein R, R′, and R″ are independently hydrogen or an alkyl, cyano, or halo group; R1 is hydrogen or a halo, substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, cyano, hydroxy, alkoxy, carboxy, or ester group; L is an organic linking group; EWG represents an electron withdrawing group having a Hammett-sigma value greater than or equal to 0.35 such that the oxygen-carbon bond in O—C(EWG)(R1) is cleavable in the presence of a cleaving acid having a pKa of 2 or less as measured in water; Ar is a substituted or unsubstituted arylene group; X is NR2 or oxygen; R2 is hydrogen or an alkyl group; t-alkyl represents a tertiary alkyl group having 4 to 6 carbon atoms, and m represents at least 1 mol % and up to and including 100 mol %, based on the total recurring units in the polymer.
摘要:
A conductive metal pattern is formed in a polymeric layer that has a polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure of the reactive polymer to radiation, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide crosslinking. The polymeric layer is patternwise exposed to form non-exposed regions and exposed regions, which are contacted with a reducing agent to incorporate reducing agent therein. These exposed regions are then contacted with electroless seed metal ions to oxidize the reducing agent to form corresponding electroless seed metal nuclei that can be then electrolessly plated with a conductive metal.
摘要:
A conductive metal pattern is formed using a reactive polymer that can provide pendant sulfonic acid groups upon exposure to radiation, and (2) pendant groups that are capable of providing crosslinking. The polymeric layer is patternwise exposed to radiation to provide first exposed regions that are then contacted with electroless seed metal ions to form a pattern of electroless seed metal ions, followed by contact with a halide. At least some of the electroless seed metal halide can be exposed to form second exposed regions. The polymeric layer can be contacted with a reducing agent either: (i) to develop the electroless seed metal image in the second exposed regions, or (ii) to develop all of the electroless seed metal halide in the first exposed regions, and optionally contacted with a fixing agent. The electroless seed metal nuclei in the first exposed regions can be electrolessly plated with a conductive metal.
摘要:
A conductive pattern is formed in a polymeric layer that has (a) a reactive polymer comprising pendant tertiary alkyl ester groups, (b) a compound that provides an acid upon exposure to radiation, and (c) a crosslinking agent. The polymeric layer is patternwise exposed to radiation to provide a polymeric layer comprising non-exposed regions and exposed regions comprising a polymer comprising carboxylic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. This pattern of electroless seed metal ions can be contacted with a non-reducing reagent that reacts with the electroless seed metal ions to form an electroless seed metal compound that has a pKsp of less than 40. This bound electroless seed metal compound is then electrolessly plated with a suitable conductive metal.
摘要:
The present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and to processes for preparing the semiconductor nanocrystal layer.
摘要:
The present invention relates to compounds of general formula (13), and pharmaceutically acceptable salts thereof, in which: n=an integer of from 1 to 4; A represents a trioxane-containing residue; B represents a group having the general formula: -D-E-F-, in which D is linked to A and represents an atom or group selected from the following (a, b, c, d), E represents a bivalent, optionally substituted organic radical; and F is linked to C and represents a group selected from the following: (e, f, g, h) and C represents a group containing at least two nitrogen atoms, (13).
摘要:
A photographically useful high bromide tabular grain silver halide emulsion is disclosed in which iodide is incorporated in a tabular grain central region to lower contrast and in a peripheral region zone to increase photoefficiency. A further increase in photoefficiency is provided by an annular spacer region interposed between the central region and peripheral region zone having a lower iodide content than either.
摘要:
A photographic emulsion is disclosed in which radiation-sensitive silver halide grains are present containing (a) a continuous silver halide phase of a face centered cubic rock salt crystal lattice structure and (b) a discontinuous phase in the form of discrete islands separated by and surrounded by the continuous phase, each of the islands exhibiting a silver iodide crystal lattice structure.
摘要:
The present invention provides a method for making a metallic pattern on a substrate having a surface comprising bare metal in predetermined areas and metal coated by a resist in remaining areas which comprises (i) protecting the bare metal by coating with a film-forming resin, (ii) removing any film-forming resin from the resist, (iii) removing the resist from said remaining areas using a solvent which will not remove the film-forming resin, thereby exposing metal in said remaining areas, (iv) etching the metal exposed in (iii) using an etchant which does not remove the film-forming resin and (v) removing the film-forming resin with a suitable solvent.