CROSSLINKABLE POLYMERS
    1.
    发明申请
    CROSSLINKABLE POLYMERS 有权
    可交联聚合物

    公开(公告)号:US20160046748A1

    公开(公告)日:2016-02-18

    申请号:US14457477

    申请日:2014-08-12

    IPC分类号: C08F220/68

    摘要: Crosslinkable polymers comprise recurring units represented by: wherein R, R′, and R″ are independently hydrogen or an alkyl, cyano, or halo group; R1 is hydrogen or a halo, substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, cyano, hydroxy, alkoxy, carboxy, or ester group; L is an organic linking group; EWG represents an electron withdrawing group having a Hammett-sigma value greater than or equal to 0.35 such that the oxygen-carbon bond in O—C(EWG)(R1) is cleavable in the presence of a cleaving acid having a pKa of 2 or less as measured in water; Ar is a substituted or unsubstituted arylene group; X is NR2 or oxygen; R2 is hydrogen or an alkyl group; t-alkyl represents a tertiary alkyl group having 4 to 6 carbon atoms, and m represents at least 1 mol % and up to and including 100 mol %, based on the total recurring units in the polymer.

    摘要翻译: 可交联聚合物包含由下式表示的重复单元:其中R,R'和R“独立地为氢或烷基,氰基或卤代基; R 1是氢或卤素,取代或未取代的烷基,取代或未取代的环烷基,氰基,羟基,烷氧基,羧基或酯基; L是有机连接基团; EWG表示具有大于或等于0.35的哈米特 - 西格玛值的吸电子基团,使得O-C(EWG)(R1)中的氧 - 碳键可在pKa为2的裂解酸存在下裂解,或 较少在水中测量; Ar是取代或未取代的亚芳基; X为NR2或氧; R2是氢或烷基; 基于聚合物中的总重复单元,t-烷基表示具有4-6个碳原子的叔烷基,m表示至少1mol%且至多且包括100mol%。

    Crosslinkable polymers
    2.
    发明授权
    Crosslinkable polymers 有权
    可交联聚合物

    公开(公告)号:US09249248B1

    公开(公告)日:2016-02-02

    申请号:US14457477

    申请日:2014-08-12

    摘要: Crosslinkable polymers comprise recurring units represented by: wherein R, R′, and R″ are independently hydrogen or an alkyl, cyano, or halo group; R1 is hydrogen or a halo, substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, cyano, hydroxy, alkoxy, carboxy, or ester group; L is an organic linking group; EWG represents an electron withdrawing group having a Hammett-sigma value greater than or equal to 0.35 such that the oxygen-carbon bond in O—C(EWG)(R1) is cleavable in the presence of a cleaving acid having a pKa of 2 or less as measured in water; Ar is a substituted or unsubstituted arylene group; X is NR2 or oxygen; R2 is hydrogen or an alkyl group; t-alkyl represents a tertiary alkyl group having 4 to 6 carbon atoms, and m represents at least 1 mol % and up to and including 100 mol %, based on the total recurring units in the polymer.

    摘要翻译: 可交联聚合物包含由下式表示的重复单元:其中R,R'和R“独立地为氢或烷基,氰基或卤代基; R 1是氢或卤素,取代或未取代的烷基,取代或未取代的环烷基,氰基,羟基,烷氧基,羧基或酯基; L是有机连接基团; EWG表示具有大于或等于0.35的哈米特 - 西格玛值的吸电子基团,使得O-C(EWG)(R1)中的氧 - 碳键可在pKa为2的裂解酸存在下裂解,或 较少在水中测量; Ar是取代或未取代的亚芳基; X为NR2或氧; R2是氢或烷基; 基于聚合物中的总重复单元,t-烷基表示具有4-6个碳原子的叔烷基,m表示至少1mol%且至多且包括100mol%。

    Electroless plating method
    3.
    发明授权
    Electroless plating method 有权
    无电镀法

    公开(公告)号:US09081281B2

    公开(公告)日:2015-07-14

    申请号:US14084732

    申请日:2013-11-20

    IPC分类号: G03F7/26 G03F7/16 G03F7/20

    摘要: A conductive metal pattern is formed in a polymeric layer that has a polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure of the reactive polymer to radiation, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide crosslinking. The polymeric layer is patternwise exposed to form non-exposed regions and exposed regions, which are contacted with a reducing agent to incorporate reducing agent therein. These exposed regions are then contacted with electroless seed metal ions to oxidize the reducing agent to form corresponding electroless seed metal nuclei that can be then electrolessly plated with a conductive metal.

    摘要翻译: 在具有聚合物的聚合物层中形成导电金属图案,所述聚合物包含(1)当将反应性聚合物暴露于辐射时能够提供侧链磺酸基的侧基,和(2)能够反应的侧基 在磺酸基存在下提供交联。 聚合物层被图案化地暴露以形成非暴露区域和暴露区域,其与还原剂接触以在其中引入还原剂。 然后将这些暴露的区域与无电子种子金属离子接触以氧化还原剂,以形成相应的无电子种子金属核,然后可以用导电金属进行无电镀。

    ELECTROLESS PLATING METHOD USING HALIDE
    4.
    发明申请
    ELECTROLESS PLATING METHOD USING HALIDE 有权
    使用半导体的电镀方法

    公开(公告)号:US20150140495A1

    公开(公告)日:2015-05-21

    申请号:US14084969

    申请日:2013-11-20

    IPC分类号: G03F7/16 G03F7/11 G03F7/20

    摘要: A conductive metal pattern is formed using a reactive polymer that can provide pendant sulfonic acid groups upon exposure to radiation, and (2) pendant groups that are capable of providing crosslinking. The polymeric layer is patternwise exposed to radiation to provide first exposed regions that are then contacted with electroless seed metal ions to form a pattern of electroless seed metal ions, followed by contact with a halide. At least some of the electroless seed metal halide can be exposed to form second exposed regions. The polymeric layer can be contacted with a reducing agent either: (i) to develop the electroless seed metal image in the second exposed regions, or (ii) to develop all of the electroless seed metal halide in the first exposed regions, and optionally contacted with a fixing agent. The electroless seed metal nuclei in the first exposed regions can be electrolessly plated with a conductive metal.

    摘要翻译: 使用可以在暴露于辐射时提供侧链磺酸基团的反应性聚合物形成导电金属图案,和(2)能够提供交联的侧基。 将聚合物层图案地暴露于辐射以提供第一暴露区域,然后与无电晶种金属离子接触以形成无电子种子金属离子的图案,然后与卤化物接触。 至少一些无电子种子金属卤化物可以暴露以形成第二暴露区域。 聚合物层可以与还原剂接触,即:(i)在第二暴露区域中显影无电子种子金属图像,或(ii)在第一曝光区域中显影所有无电子种子金属卤化物,并任选地接触 用固定剂。 第一暴露区域中的无电晶种金属核可以用导电金属无电镀。

    Electroless plating method using non-reducing agent
    5.
    发明授权
    Electroless plating method using non-reducing agent 有权
    无电镀法使用非还原剂

    公开(公告)号:US09023560B1

    公开(公告)日:2015-05-05

    申请号:US14072049

    申请日:2013-11-05

    IPC分类号: C23C18/20 G03F7/26 G03F7/40

    摘要: A conductive pattern is formed in a polymeric layer that has (a) a reactive polymer comprising pendant tertiary alkyl ester groups, (b) a compound that provides an acid upon exposure to radiation, and (c) a crosslinking agent. The polymeric layer is patternwise exposed to radiation to provide a polymeric layer comprising non-exposed regions and exposed regions comprising a polymer comprising carboxylic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. This pattern of electroless seed metal ions can be contacted with a non-reducing reagent that reacts with the electroless seed metal ions to form an electroless seed metal compound that has a pKsp of less than 40. This bound electroless seed metal compound is then electrolessly plated with a suitable conductive metal.

    摘要翻译: 导电图案形成在聚合物层中,该聚合物层具有(a)包含叔烷基酯基侧基的反应性聚合物,(b)暴露于辐射时提供酸的化合物,和(c)交联剂。 将聚合物层图案地暴露于辐射以提供包含非暴露区域的聚合物层和包含包含羧酸基团的聚合物的暴露区域。 暴露的区域与无电子种子金属离子接触以形成无电子种子金属离子的图案。 无电子种子金属离子的这种图案可以与非还原试剂接触,其与无电子种子金属离子反应形成pKsp小于40的化学金属化合物。然后将该结合的无电子种子金属化合物无电镀 具有合适的导电金属。

    Doped Semiconductor Nanocrystal Layers And Preparation Thereof
    6.
    发明申请
    Doped Semiconductor Nanocrystal Layers And Preparation Thereof 审中-公开
    掺杂半导体纳米晶体层及其制备方法

    公开(公告)号:US20070012907A1

    公开(公告)日:2007-01-18

    申请号:US11533036

    申请日:2006-09-19

    IPC分类号: H01L29/06

    摘要: The present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and to processes for preparing the semiconductor nanocrystal layer.

    摘要翻译: 掺杂半导体纳米晶体层本发明涉及掺杂半导体纳米晶层,其包括(a)不含离子注入损伤的Ⅳ族氧化物层,(b)分布在IV族氧化物层中的半导体纳米晶体的30至50原子% c)0.5至15原子%的一种或多种稀土元素,所述一种或多种稀土元素为(i)分散在半导体纳米晶体的表面上,以及(ii)基本上相等地分布在IV族氧化物的厚度上 层。 本发明还涉及包含上述半导体纳米晶层的半导体结构和制备半导体纳米晶层的工艺。

    Trioxane derivatives
    7.
    发明申请
    Trioxane derivatives 审中-公开
    三恶烷衍生物

    公开(公告)号:US20050148598A1

    公开(公告)日:2005-07-07

    申请号:US10497731

    申请日:2002-12-06

    CPC分类号: C07D493/18 C07D519/00

    摘要: The present invention relates to compounds of general formula (13), and pharmaceutically acceptable salts thereof, in which: n=an integer of from 1 to 4; A represents a trioxane-containing residue; B represents a group having the general formula: -D-E-F-, in which D is linked to A and represents an atom or group selected from the following (a, b, c, d), E represents a bivalent, optionally substituted organic radical; and F is linked to C and represents a group selected from the following: (e, f, g, h) and C represents a group containing at least two nitrogen atoms, (13).

    摘要翻译: 本发明涉及通式(13)的化合物及其药学上可接受的盐,其中:n = 1至4的整数; A表示含三氧杂环己烷的残基; B表示具有以下通式的基团:-D-E-F-,其中D与A连接并且表示选自以下(a,b,c,d)中的原子或基团,E表示二价任选取代的有机基团; 并且F与C连接并且表示选自以下的基团:(e,f,g,h),C表示含有至少两个氮原子的基团,(13)。

    Iodide containing high bromide tabular grain emulsions exhibiting
improved photoefficiency
    8.
    发明授权
    Iodide containing high bromide tabular grain emulsions exhibiting improved photoefficiency 失效
    碘化物含有表现出改进的光效率的高溴化物片状颗粒乳剂

    公开(公告)号:US5728515A

    公开(公告)日:1998-03-17

    申请号:US639449

    申请日:1996-04-29

    IPC分类号: G03C1/005 G03C1/035

    CPC分类号: G03C1/0051

    摘要: A photographically useful high bromide tabular grain silver halide emulsion is disclosed in which iodide is incorporated in a tabular grain central region to lower contrast and in a peripheral region zone to increase photoefficiency. A further increase in photoefficiency is provided by an annular spacer region interposed between the central region and peripheral region zone having a lower iodide content than either.

    摘要翻译: 公开了一种摄影有用的高溴化物片状卤化银乳剂,其中将碘化物并入片状晶粒中心区域以降低对比度,并在周边区域加入光效率。 光效率的进一步提高是由中间区域和周边区域之间的环状间隔区提供的,碘化物含量低于其中之一。

    Radiation-sensitive silver halide grains internally containing a
discontinuous crystal phase
    9.
    发明授权
    Radiation-sensitive silver halide grains internally containing a discontinuous crystal phase 失效
    内部含有不连续结晶相的辐射敏感卤化银颗粒

    公开(公告)号:US5695923A

    公开(公告)日:1997-12-09

    申请号:US707814

    申请日:1996-08-30

    IPC分类号: G03C1/035

    CPC分类号: G03C1/035

    摘要: A photographic emulsion is disclosed in which radiation-sensitive silver halide grains are present containing (a) a continuous silver halide phase of a face centered cubic rock salt crystal lattice structure and (b) a discontinuous phase in the form of discrete islands separated by and surrounded by the continuous phase, each of the islands exhibiting a silver iodide crystal lattice structure.

    摘要翻译: 公开了一种照相乳剂,其中存在辐射敏感卤化银颗粒,其包含(a)面心立方岩盐晶格结构的连续卤化银相和(b)以离散岛形式分离的不连续相, 被连续相包围,每个岛呈现碘化银晶格结构。

    Method for making metallic patterns
    10.
    发明授权
    Method for making metallic patterns 失效
    制作金属图案的方法

    公开(公告)号:US5112440A

    公开(公告)日:1992-05-12

    申请号:US601162

    申请日:1990-10-22

    IPC分类号: C23F1/00 G03F7/00 H05K3/06

    摘要: The present invention provides a method for making a metallic pattern on a substrate having a surface comprising bare metal in predetermined areas and metal coated by a resist in remaining areas which comprises (i) protecting the bare metal by coating with a film-forming resin, (ii) removing any film-forming resin from the resist, (iii) removing the resist from said remaining areas using a solvent which will not remove the film-forming resin, thereby exposing metal in said remaining areas, (iv) etching the metal exposed in (iii) using an etchant which does not remove the film-forming resin and (v) removing the film-forming resin with a suitable solvent.