公开(公告)号：US06358813B1

公开(公告)日：2002-03-19

申请号：US09713766

申请日：2000-11-15

申请人： Steven J. Holmes ,  Charles Black ,  David J. Frank ,  Toshiharu Furukawa ,  Mark C. Hakey ,  David V. Horak ,  William Hsioh-Lien Ma ,  Keith R. Milkove ,  Kathryn W. Guarini

发明人： Steven J. Holmes ,  Charles Black ,  David J. Frank ,  Toshiharu Furukawa ,  Mark C. Hakey ,  David V. Horak ,  William Hsioh-Lien Ma ,  Keith R. Milkove ,  Kathryn W. Guarini

IPC分类号： H01L2120

CPC分类号： H01L28/92

摘要： Described is a method of increasing the capacitance of semiconductor capacitors by providing a first solid-state electrode pattern on a semiconductor medium, etching topographic features on said first electrode pattern in a manner effective in increasing the surface area of said first electrode pattern, depositing a dielectric layer upon said electrode pattern that substantially conforms to said topographic features, and depositing a second solid-state electrode pattern upon said dielectric layer and sufficiently insulated from said first solid-state electrode pattern so as to create a capacitance with said first solid-state electrode pattern.

摘要翻译： 描述了通过在半导体介质上提供第一固态电极图案来增加半导体电容器的电容的方法，以有效增加所述第一电极图案的表面积的方式蚀刻所述第一电极图案上的地形特征， 所述电极图案上的电介质层基本上符合所述形貌特征，并且在所述电介质层上沉积第二固态电极图案，并且与所述第一固态电极图案充分绝缘，从而产生具有所述第一固态的电容 电极图案。

公开(公告)号：US06506660B2

公开(公告)日：2003-01-14

申请号：US10008092

申请日：2001-11-13

申请人： Steven J. Holmes ,  Charles Black ,  David J. Frank ,  Toshiharu Furukawa ,  Mark C. Hakey ,  David V. Horak ,  William Hsioh-Lien Ma ,  Keith R. Milkove ,  Kathryn W. Guarini

发明人： Steven J. Holmes ,  Charles Black ,  David J. Frank ,  Toshiharu Furukawa ,  Mark C. Hakey ,  David V. Horak ,  William Hsioh-Lien Ma ,  Keith R. Milkove ,  Kathryn W. Guarini

IPC分类号： H01L2120

CPC分类号： H01L28/92

摘要： Described is a method of increasing the capacitance of semiconductor capacitors by providing a first solid-state electrode pattern on a semiconductor medium, etching topographic features on said first electrode pattern in a manner effective in increasing the surface area of said first electrode pattern, depositing a dielectric layer upon said electrode pattern that substantially conforms to said topographic features, and depositing a second solid-state electrode pattern upon said dielectric layer and sufficiently insulated from said first solid-state electrode pattern so as to create a capacitance with said first solid-state electrode pattern.

摘要翻译： 描述了通过在半导体介质上提供第一固态电极图案来增加半导体电容器的电容的方法，以有效增加所述第一电极图案的表面积的方式蚀刻所述第一电极图案上的地形特征， 所述电极图案上的电介质层基本上符合所述形貌特征，并且在所述电介质层上沉积第二固态电极图案，并且与所述第一固态电极图案充分绝缘，从而产生具有所述第一固态的电容 电极图案。

公开(公告)号：US07342301B2

公开(公告)日：2008-03-11

申请号：US11430477

申请日：2006-05-09

申请人： David J. Frank ,  Kathryn W. Guarini ,  Christopher B. Murray ,  Xinlin Wang ,  Hon-Sum Philip Wong

发明人： David J. Frank ,  Kathryn W. Guarini ,  Christopher B. Murray ,  Xinlin Wang ,  Hon-Sum Philip Wong

IPC分类号： H01L23/12 ,  H01L21/4763

CPC分类号： H01L23/525 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A connection device includes a plurality of re-configurable vias that connect a first metal layer to a second metal layer. An actuating element is disposed between the first metal layer and the second metal layer. The actuating element changes the configuration of the plurality of re-configurable vias to change the plurality of re-configurable vias between a conductive state and a non-conductive state.

摘要翻译： 连接装置包括将第一金属层连接到第二金属层的多个可重新配置的通孔。 致动元件设置在第一金属层和第二金属层之间。 致动元件改变多个可重新配置的通孔的配置，以改变导电状态和非导通状态之间的多个可重新配置的通孔。

公开(公告)号：US07074707B2

公开(公告)日：2006-07-11

申请号：US10662709

申请日：2003-09-15

申请人： David J. Frank ,  Kathryn W. Guarini ,  Christopher B. Murray ,  Xinlin Wang ,  Hon-Sum Philip Wong

发明人： David J. Frank ,  Kathryn W. Guarini ,  Christopher B. Murray ,  Xinlin Wang ,  Hon-Sum Philip Wong

IPC分类号： H01L21/4763

CPC分类号： H01L23/525 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A connection device includes a plurality of re-configurable vias that connect a first metal layer to a second metal layer. An actuating element is disposed between the first metal layer and the second metal layer. The actuating element changes the configuration of the plurality of re-configurable vias to change the plurality of re-configurable vias between a conductive state and a non-conductive state.

摘要翻译： 连接装置包括将第一金属层连接到第二金属层的多个可重新配置的通孔。 致动元件设置在第一金属层和第二金属层之间。 致动元件改变多个可重新配置的通孔的配置，以改变导电状态和非导通状态之间的多个可重新配置的通孔。

公开(公告)号：US20110241073A1

公开(公告)日：2011-10-06

申请号：US12750342

申请日：2010-03-30

申请人： GUY M. COHEN ,  David J. Frank ,  Isaac Lauer

发明人： GUY M. COHEN ,  David J. Frank ,  Isaac Lauer

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1203 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/84 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/665 ,  H01L29/66742 ,  H01L29/7848 ,  H01L29/78618

摘要： A method for fabricating an upside-down p-FET includes: fully etching source and drain regions in a donor substrate by etching a silicon-on-insulator layer through buried oxide and partially etching the silicon substrate; refilling a bottom and sidewall surfaces of the etched source and drain regions with epitaxial silicide/germanide to form e-SiGe source and drain regions; capping the source and drain regions with self-aligning silicide/germanide; providing a silicide layer formed over the gate conductor line; providing a first stress liner over the gate and the e-SiGe source and drain regions; depositing a planarized dielectric over the self-aligning silicide/germanide; inverting the donor substrate; bonding the donor substrate to a host wafer; and selectively exposing the buried oxide and the e-SiGe source and drain regions by removing the donor wafer.

摘要翻译： 一种用于制造倒置p-FET的方法包括：通过掩埋氧化物蚀刻绝缘体上硅层并部分蚀刻硅衬底，在施主衬底中完全蚀刻源区和漏区; 用外延硅化物/锗化物填充蚀刻的源极和漏极区的底部和侧壁表面以形成e-SiGe源极和漏极区; 用自对准硅化物/锗化物封装源区和漏区; 提供形成在所述栅极导体线上的硅化物层; 在栅极和e-SiGe源极和漏极区上提供第一应力衬垫; 在自对准硅化物/锗化物上沉积平坦化的电介质; 反转施主衬底; 将施主衬底接合到主晶片; 并且通过去除施主晶片来选择性地暴露所述掩埋氧化物和e-SiGe源极和漏极区域。

公开(公告)号：USD258423S

公开(公告)日：1981-03-03

申请号：US855469

申请日：1977-11-28

申请人： Teresita E. Alvarez ,  David J. Frank ,  Barry G. Carroll

设计人： Teresita E. Alvarez ,  David J. Frank ,  Barry G. Carroll

公开(公告)号：US20120293236A1

公开(公告)日：2012-11-22

申请号：US13566053

申请日：2012-08-03

申请人： David J. Frank ,  Guy Cohen

发明人： David J. Frank ,  Guy Cohen

IPC分类号： H03K17/00 ,  B23P17/04

CPC分类号： B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/053 ,  B81C2201/0167

摘要： A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

摘要翻译： 提供了非易失性纳米机电系统装置，其包括悬臂结构，其包括具有初始形状的梁，所述梁的一端由支撑基座支撑，并且梁偏转器包括相变材料（PCM），所述相变材料 光束的一部分处于防滑状态，具有光束的材料，PCM采取非晶相或结晶相中的一种，并且在获取结晶相时将光束从初始形状偏转。

公开(公告)号：US08314983B2

公开(公告)日：2012-11-20

申请号：US12615358

申请日：2009-11-10

申请人： David J. Frank ,  Guy Cohen

发明人： David J. Frank ,  Guy Cohen

IPC分类号： G02B26/08

CPC分类号： B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/053 ,  B81C2201/0167

摘要： A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

摘要翻译： 提供了非易失性纳米机电系统装置，其包括悬臂结构，其包括具有初始形状的梁，所述梁的一端由支撑基座支撑，并且梁偏转器包括相变材料（PCM），所述相变材料 光束的一部分处于防滑状态，具有光束的材料，PCM采取非晶相或结晶相中的一种，并且在获取结晶相时将光束从初始形状偏转。

公开(公告)号：US08214169B2

公开(公告)日：2012-07-03

申请号：US10643193

申请日：2003-08-18

申请人： Azeez Bhavnagarwala ,  David J. Frank ,  Stephen V. Kosonocky

发明人： Azeez Bhavnagarwala ,  David J. Frank ,  Stephen V. Kosonocky

IPC分类号： G01D18/00

CPC分类号： G11C29/50004 ,  G01R31/2603 ,  G01R31/3016 ,  G01R31/31725 ,  G01R31/31727 ,  G01R31/3173 ,  G01R31/31937 ,  G11C11/41 ,  G11C29/50 ,  G11C2029/5002

摘要： Circuits and methods for measuring and characterizing random variations in device characteristics of semiconductor integrated circuit devices, which enable circuit designers to accurately measure and characterize random variations in device characteristics (such as transistor threshold voltage) between neighboring devices resulting from random sources such as dopant fluctuations and line edge roughness, for purposes of integrated circuit design and analysis. In one aspect, a method for characterizing random variations in device mismatch (e.g., threshold voltage mismatch) between a pair of device (e.g., transistors) is performed by obtaining subthreshold DC voltage characteristic data for the device pair, and then determining a distribution in voltage threshold mismatch for the device pair directly from the corresponding subthreshold DC voltage characteristic data. The voltage threshold mismatch distributions of different device pairs of a given circuit design can then be used to determine voltage threshold variations of the constituent circuit devices. The voltage threshold variation of the devices can be used to characterize the random variations of the given circuit.

摘要翻译： 用于测量和表征半导体集成电路器件的器件特性的随机变化的电路和方法，其使电路设计者能够精确地测量和表征由诸如掺杂剂波动的随机源产生的相邻器件之间的器件特性（例如晶体管阈值电压）的随机变化 和线边缘粗糙度，用于集成电路设计和分析。 在一方面，通过获得器件对的亚阈值DC电压特性数据来执行用于表征一对器件（例如，晶体管）之间的器件失配（例如，阈值电压失配）的随机变化的方法，然后确定器件对中的分布 直接从对应的亚阈值直流电压特性数据中的器件对的电压阈值失配。 然后可以使用给定电路设计的不同器件对的电压阈值失配分布来确定构成电路器件的电压阈值变化。 器件的电压阈值变化可用于表征给定电路的随机变化。

公开(公告)号：US20110109952A1

公开(公告)日：2011-05-12

申请号：US12615358

申请日：2009-11-10

申请人： David J. Frank ,  Guy Cohen

发明人： David J. Frank ,  Guy Cohen

IPC分类号： G02B26/08 ,  H02N10/00 ,  H01S4/00

CPC分类号： B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/053 ,  B81C2201/0167

摘要： A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

摘要翻译： 提供了非易失性纳米机电系统装置，其包括悬臂结构，其包括具有初始形状的梁，所述梁的一端由支撑基座支撑，并且梁偏转器包括相变材料（PCM），所述相变材料 光束的一部分处于防滑状态，具有光束的材料，PCM采取非晶相或结晶相中的一种，并且在获取结晶相时将光束从初始形状偏转。