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公开(公告)号：US20090326337A1
公开(公告)日：2009-12-31
申请号：US12375861
申请日：2007-07-31
CPC分类号： G01N27/04 , G01N15/1031 , G01N2015/0038 , G01R27/02 , G01R33/09 , G01R33/095 , G01R33/1269 , G11C11/161 , G11C11/18 , G11C13/0019
摘要： Disclosed herein is an apparatus for sensing characteristics of an object. In a preferred embodiment, the apparatus comprises an array, wherein the array comprises a plurality of nanoscale hybrid semiconductor/metal devices which are in proximity to an object, each hybrid semiconductor/metal device being configured to produce a voltage in response to a perturbation, wherein the produced voltage is indicative of a characteristic of the object. Any of a variety of nanoscale EXX sensors can be selected as the hybrid semiconductor/metal devices in the array. With such an array, ultra high resolution images of nanoscopic resolution can be generated of objects such as living cells, wherein the images are indicative of a variety of cell biologic processes.
摘要翻译： 本文公开了一种用于感测物体的特性的装置。 在优选实施例中，该装置包括阵列，其中阵列包括接近物体的多个纳米级混合半导体/金属器件，每个混合半导体/金属器件被配置为响应于扰动产生电压， 其中所产生的电压表示物体的特性。 可选择各种纳米级EXX传感器中的任何一种作为阵列中的混合半导体/金属器件。 利用这样的阵列，可以生成诸如活细胞的物体的纳米分辨率的超高分辨率图像，其中图像指示各种细胞生物过程。
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公开(公告)号：US08436436B2
公开(公告)日：2013-05-07
申请号：US12375861
申请日：2007-07-31
CPC分类号： G01N27/04 , G01N15/1031 , G01N2015/0038 , G01R27/02 , G01R33/09 , G01R33/095 , G01R33/1269 , G11C11/161 , G11C11/18 , G11C13/0019
摘要： Disclosed herein is an apparatus for sensing characteristics of an object. In a preferred embodiment, the apparatus comprises an array, wherein the array comprises a plurality of nanoscale hybrid semiconductor/metal devices which are in proximity to an object, each hybrid semiconductor/metal device being configured to produce a voltage in response to a perturbation, wherein the produced voltage is indicative of a characteristic of the object. Any of a variety of nanoscale EXX sensors can be selected as the hybrid semiconductor/metal devices in the array. With such an array, ultra high resolution images of nanoscopic resolution can be generated of objects such as living cells, wherein the images are indicative of a variety of cell biologic processes.
摘要翻译： 本文公开了一种用于感测物体的特性的装置。 在优选实施例中，该装置包括阵列，其中阵列包括接近物体的多个纳米级混合半导体/金属器件，每个混合半导体/金属器件被配置为响应于扰动产生电压， 其中所产生的电压表示物体的特性。 可选择各种纳米级EXX传感器中的任何一种作为阵列中的混合半导体/金属器件。 利用这样的阵列，可以生成诸如活细胞的物体的纳米分辨率的超高分辨率图像，其中图像指示各种细胞生物过程。
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3.发明申请Method and Apparatus for High Resolution Photon Detection Based on Extraordinary Optoconductance (EOC) Effects 有权基于特殊光电导（EOC）影响的高分辨率光子检测方法与装置公开(公告)号：US20110233382A1
公开(公告)日：2011-09-29
申请号：US12986621
申请日：2011-01-07
IPC分类号： H01L27/146 , H01L31/0224 , H01L29/02 , H01J40/14
CPC分类号： H01L27/14665 , B82Y15/00 , H01L27/1446 , H01L31/0304 , H01L31/09 , H01L31/108 , Y02E10/544
摘要： The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and preferably an inverse EOC (I-EOC) phenomenon, in a metal-semiconductor hybrid (MSH) structure having a semiconductor/metal interface. Such a design shows efficient photon sensing not exhibited by bare semiconductors. In experimentation with an exemplary embodiment, ultrahigh spatial resolution 4-point optoconductance measurements using Helium-Neon laser radiation reveal a strikingly large optoconductance property, an observed maximum measurement of 9460% EOC, for a 250 nm device. Such an exemplary EOC device also demonstrates specific detectivity higher than 5.06×1011 cm√Hz/W for 632 nm illumination and a high dynamic response of 40 dB making such sensors technologically competitive for a wide range of practical applications.
摘要翻译： 本发明人公开了一种新的高性能光学传感器，优选纳米级尺寸，其在室温下基于金属 - 半导体混合物（MSH）中的非常光导（EOC）现象，优选反EOC（I-EOC）现象起作用 ）结构具有半导体/金属界面。 这样的设计显示出没有露出半导体的高效光子传感器。 在使用示例性实施例的实验中，使用氦 - 氖激光辐射的超高空间分辨率4点光电导测量显示了对于250nm器件的显着大的光导特性，观察到的最大测量值为9460％EOC。 这种示例性的EOC装置还显示出对于632nm照明高于5.06×1011cm / Hz / W的特定检测率和40dB的高动态响应，使得这种传感器在广泛的实际应用中技术上是有竞争力的。
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公开(公告)号：US08497459B2
公开(公告)日：2013-07-30
申请号：US12986621
申请日：2011-01-07
CPC分类号： H01L27/14665 , B82Y15/00 , H01L27/1446 , H01L31/0304 , H01L31/09 , H01L31/108 , Y02E10/544
摘要： The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and preferably an inverse EOC (I-EOC) phenomenon, in a metal-semiconductor hybrid (MSH) structure having a semiconductor/metal interface. Such a design shows efficient photon sensing not exhibited by bare semiconductors. In experimentation with an exemplary embodiment, ultrahigh spatial resolution 4-point optoconductance measurements using Helium-Neon laser radiation reveal a strikingly large optoconductance property, an observed maximum measurement of 9460% EOC, for a 250 nm device. Such an exemplary EOC device also demonstrates specific detectivity higher than 5.06×1011 cm√Hz/W for 632 nm illumination and a high dynamic response of 40 dB making such sensors technologically competitive for a wide range of practical applications.
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