公开(公告)号：US07728408B2

公开(公告)日：2010-06-01

申请号：US11841032

申请日：2007-08-20

Applicant: Su Lim

Inventor： Su Lim

IPC: H01L21/331

CPC classification number: H01L29/0821 ,  H01L27/0664 ,  H01L27/14643 ,  H01L29/66272 ,  H01L29/732

Abstract: A vertical BJT which has a maximal current gain for a photodiode area. According to embodiments, since the BJT can be formed together with the photodiode, and collector current flows up and down based on the double base structure, the magnitude of the current may be increased.

Abstract translation: 具有光电二极管面积最大电流增益的垂直BJT。 根据实施例，由于可以与光电二极管一起形成BJT，并且集电极电流基于双基底结构上下流动，所以可以增加电流的大小。

公开(公告)号：US20080237676A1

公开(公告)日：2008-10-02

申请号：US12002237

申请日：2007-12-13

Applicant: Su Lim

Inventor： Su Lim

IPC: H01L27/108 ,  H01L21/20

CPC classification number: H01L29/93

Abstract: Disclosed is a varactor and/or variable capacitor. The varactor/variable capacitor includes a plurality of first conductive-type wells vertically formed on a substrate, a plurality of second conductive-type ion implantation areas formed in the first conductive-type wells, at least one second conductive-type plug electrically connected to the second conductive-type ion implantation areas, an isolation layer formed at sides of an uppermost second conductive-type ion implantation area, and a first conductive-type ion implantation area in an uppermost first conductive-type well electrically disconnected from the uppermost second conductive-type ion implantation area by the isolation area.

Abstract translation: 公开了一种变容二极管和/或可变电容器。 变容二极管/可变电容器包括垂直形成在衬底上的多个第一导电型阱，形成在第一导电型阱中的多个第二导电型离子注入区，至少一个第二导电型插塞，电连接到 第二导电型离子注入区域，形成在最上面的第二导电型离子注入区域的侧面处的隔离层，以及在最上面的第二导电类型阱中的第一导电型离子注入区域， 型离子注入区域。

公开(公告)号：US20070145442A1

公开(公告)日：2007-06-28

申请号：US11616753

申请日：2006-12-27

Applicant: Su Lim

Inventor： Su Lim

IPC: H01L31/113

CPC classification number: H01L27/14645 ,  H01L27/14698

Abstract: Embodiments relate to a vertical-type CMOS image sensor, a method of manufacturing the same, and a method of gettering the same, in which source and drain regions are expanded to improve grounding and gettering effects. In embodiments, the vertical-type CMOS image sensor may include a silicon substrate, a first photodiode formed in a prescribed part of the silicon substrate, a first epitaxial layer formed on the silicon substrate, a second photodiode formed on the first epitaxial layer to overlap the first photodiode, a second epitaxial layer formed on the first epitaxial layer, a third photodiode formed on the second epitaxial layer to overlap the second photodiode, and first to third grounded dummy moats formed by implanting impurities into uniform parts on the silicon substrate, the first epitaxial layer, and the second epitaxial layer.

Abstract translation: 实施例涉及一种垂直型CMOS图像传感器，其制造方法以及其制造方法，其中扩大了源极和漏极区域以改善接地和吸杂效应。 在实施例中，垂直型CMOS图像传感器可以包括硅衬底，形成在硅衬底的规定部分中的第一光电二极管，在硅衬底上形成的第一外延层，形成在第一外延层上以重叠的第二光电二极管 第一光电二极管，形成在第一外延层上的第二外延层，形成在第二外延层上以与第二光电二极管重叠的第三光电二极管，以及通过将杂质注入到硅衬底上的均匀部分而形成的第一至第三接地虚拟护城河， 第一外延层和第二外延层。

公开(公告)号：US20070085880A1

公开(公告)日：2007-04-19

申请号：US11505419

申请日：2006-08-17

Applicant: Sung-wook Kang ,  Heon-soo Park ,  Su Lim

Inventor： Sung-wook Kang ,  Heon-soo Park ,  Su Lim

IPC: B41J2/14 ,  B41J2/16

CPC classification number: B41J3/543

Abstract: A hybrid image forming includes a first printing unit detachably mountable in the hybrid image forming apparatus and having a first printhead to print an image while performing a reciprocating motion in a width direction of a printing medium, and a second printing unit detachably mountable in the hybrid image forming apparatus and having a length at least as long as the width of the printing medium, and a mounting part to which each of the first printing unit and the second printing unit is detachably mountable.

Abstract translation: 混合图像形成包括可拆卸地安装在混合图像形成装置中并具有第一打印头以在打印介质的宽度方向上进行往复运动的同时打印图像的第一打印单元和可拆卸地安装在混合图像中的第二打印单元 图像形成装置，其长度至少与打印介质的宽度一样长;以及安装部，第一打印单元和第二打印单元中的每一个可拆卸地安装在该安装部分上。

公开(公告)号：US07704845B2

公开(公告)日：2010-04-27

申请号：US12002237

申请日：2007-12-13

Applicant: Su Lim

Inventor： Su Lim

IPC: H01L21/20

CPC classification number: H01L29/93

Abstract: Disclosed is a varactor and/or variable capacitor. The varactor/variable capacitor includes a plurality of first conductive-type wells vertically formed on a substrate, a plurality of second conductive-type ion implantation areas formed in the first conductive-type wells, at least one second conductive-type plug electrically connected to the second conductive-type ion implantation areas, an isolation layer formed at sides of an uppermost second conductive-type ion implantation area, and a first conductive-type ion implantation area in an uppermost first conductive-type well electrically disconnected from the uppermost second conductive-type ion implantation area by the isolation area.

Abstract translation: 公开了一种变容二极管和/或可变电容器。 变容二极管/可变电容器包括垂直形成在衬底上的多个第一导电型阱，形成在第一导电型阱中的多个第二导电型离子注入区，至少一个第二导电型插塞，电连接到 第二导电型离子注入区域，形成在最上面的第二导电型离子注入区域的侧面处的隔离层，以及在最上面的第二导电类型阱中的第一导电型离子注入区域， 型离子注入区域。

公开(公告)号：US07588956B2

公开(公告)日：2009-09-15

申请号：US11586880

申请日：2006-10-25

Applicant: Su Lim

Inventor： Su Lim

IPC: H01L21/00

CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

Abstract: Disclosed herein are a CMOS image sensor and a method of manufacturing the same, which can reduce current leakage through a plug connecting a photodiode and a transfer transistor to each other, and thereby provide low dark current levels. The CMOS image sensor includes a first epitaxial layer on or in a substrate. A photodiode PD is in the first epitaxial layer. A second epitaxial layer is on or in the substrate (e.g., on the first epitaxial layer). A shallow trench isolation region is in an area of the substrate. A plug is in the substrate (e.g., the second epitaxial layer) connected with the photodiode and spaced apart from the shallow trench isolation region. A transfer transistor having a gate electrode and source/drain regions is connected with the plug.

Abstract translation: 这里公开了CMOS图像传感器及其制造方法，其可以通过将光电二极管和传输晶体管彼此连接的插头减小电流泄漏，从而提供低的暗电流水平。 CMOS图像传感器包括在衬底上或衬底中的第一外延层。 光电二极管PD在第一外延层中。 第二外延层位于或位于衬底上（例如，在第一外延层上）。 浅沟槽隔离区域在衬底的区域中。 插头位于与光电二极管连接并与浅沟槽隔离区隔开的衬底（例如，第二外延层）中。 具有栅电极和源/漏区的转移晶体管与插头连接。

公开(公告)号：US20070151513A1

公开(公告)日：2007-07-05

申请号：US11476742

申请日：2006-06-29

Applicant: Su Lim

Inventor： Su Lim

IPC: B05C5/00 ,  B05B3/00

CPC classification number: B05B1/04 ,  B05B1/12 ,  B05B1/326 ,  B05B15/658 ,  G02F1/1333 ,  H01L21/67051 ,  H01L21/6715

Abstract: A spray nozzle for use in the manufacture of an image display device includes a first body having a first injection hole, and a second body configured to be rotatably coupled to the first body and having a second injection hole to inject fluid that is supplied thereinto from the first injection hole.

Abstract translation: 用于制造图像显示装置的喷嘴包括具有第一喷射孔的第一主体和被配置为可旋转地联接到第一主体并具有第二喷射孔以将从其中供应的流体注入的第二喷射孔的第二主体 第一个注入孔。

公开(公告)号：US07696596B2

公开(公告)日：2010-04-13

申请号：US11841040

申请日：2007-08-20

Applicant: Su Lim

Inventor： Su Lim

IPC: H01L31/06

CPC classification number: H01L27/14647 ,  H01L27/14603

Abstract: Embodiments relate to a horizontal type bipolar junction transistor element (BJT) and a CMOS image sensor having the same to form a photodiode. In embodiments, the bipolar junction transistor as well as collector current may flow uniformly in a horizontal direction, which may increase the entire amount of current. In embodiments, large current gain may be obtained. In embodiments, a bipolar junction transistor element with various current gains can be manufactured.

Abstract translation: 实施例涉及一种水平型双极结型晶体管元件（BJT）和具有此类型的CMOS图像传感器，以形成光电二极管。 在实施例中，双极结晶体管以及集电极电流可以在水平方向上均匀地流动，这可能增加整个电流量。 在实施例中，可以获得大的电流增益。 在实施例中，可以制造具有各种电流增益的双极结型晶体管元件。

公开(公告)号：US20080149976A1

公开(公告)日：2008-06-26

申请号：US11955250

申请日：2007-12-12

Applicant: Su Lim

Inventor： Su Lim

IPC: H01L27/146 ,  H01L21/04

CPC classification number: H01L27/14647 ,  H01L27/14689

Abstract: A vertical type CMOS image sensor and a method of manufacturing the same including a P+-type red photodiode formed in a semiconductor substrate, a first silicon epilayer formed over the semiconductor substrate and including a P+-type green photodiode formed therein, a second silicon epilayer formed over the first silicon epilayer and including a P+-type blue photodiode formed therein; a first P+-type plug formed in the first silicon epilayer and electrically connected to the P+-type red photodiode, and a second P+-type plug in the second silicon epilayer which is electrically connected to the P+-type green photodiode.

Abstract translation: 垂直型CMOS图像传感器及其制造方法，其包括形成在半导体衬底中的P + +型红色光电二极管，形成在半导体衬底上并包括P + 形成在其中的第二硅外延层，在第一硅外延层上形成并包括形成在其中的P + +型蓝色光电二极管; 形成在第一硅外延层中并电连接到P + +型红色光电二极管的第一P + +型插头和第二P + >型插头插入到与P + +型绿色光电二极管电连接的第二硅外延层中。

公开(公告)号：US20080048222A1

公开(公告)日：2008-02-28

申请号：US11841040

申请日：2007-08-20

Applicant: Su Lim

Inventor： Su Lim

IPC: H01L31/062

CPC classification number: H01L27/14647 ,  H01L27/14603

Abstract: Embodiments relate to a horizontal type bipolar junction transistor element (BJT) and a CMOS image sensor having the same to form a photodiode. In embodiments, the bipolar junction transistor as well as collector current may flow uniformly in a horizontal direction, which may increase the entire amount of current. In embodiments, large current gain may be obtained. In embodiments, a bipolar junction transistor element with various current gains can be manufactured

Abstract translation: 实施例涉及一种水平型双极结型晶体管元件（BJT）和具有此类型的CMOS图像传感器，以形成光电二极管。 在实施例中，双极结晶体管以及集电极电流可以在水平方向上均匀地流动，这可能增加整个电流量。 在实施例中，可以获得大的电流增益。 在实施例中，可以制造具有各种电流增益的双极结型晶体管元件