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公开(公告)号:US20090273082A1
公开(公告)日:2009-11-05
申请号:US12115254
申请日:2008-05-05
申请人: Suku Kim , James J. Murphy , Michael D. Gruenhagen , Matthew R. Reynolds , Romel N. Manatad , Jan Vincent Mancelita
发明人: Suku Kim , James J. Murphy , Michael D. Gruenhagen , Matthew R. Reynolds , Romel N. Manatad , Jan Vincent Mancelita
IPC分类号: H01L23/488 , H01L21/768
CPC分类号: H01L21/74 , H01L24/03 , H01L24/05 , H01L2224/0401 , H01L2224/05 , H01L2224/16 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/00
摘要: Methods for localized thinning of wafers used in semiconductor devices and the structures formed from such methods are described. The methods thin localized areas of the backside of the semiconductor wafer to form recesses with a bi-directional channel design that is repeated within the wafer (or die) so that no straight channel line crosses the wafer (or die). The bi-directional pattern design keeps the channels from being aligned with the crystal orientation of the wafer. The recesses are then filled by a solder ball drop process by dropping proper size solder balls into the recesses and then annealing the wafer to reflow the solder balls and flatten them out. The reflow process begins to fill in the recesses from the bottom up, thereby avoiding void formation and the resulting air traps in the reflowed solder material. Other embodiments are also described.
摘要翻译: 描述了半导体器件中使用的晶片的局部变薄方法和由这些方法形成的结构。 该方法使半导体晶片的背面薄的局部区域形成具有在晶片(或管芯)内重复的双向通道设计的凹槽,使得没有直通道线穿过晶片(或管芯)。 双向图案设计保持通道不与晶片的晶体取向对齐。 然后通过将适当尺寸的焊球落入凹槽中然后通过焊球落下工艺填充凹陷,然后退火晶片以回流焊球并使其平坦化。 回流工艺开始从底部向上填充凹槽,从而避免了空隙形成和回流焊料中形成的空气阱。 还描述了其它实施例。