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    Methods of forming a blocking pattern using a photosensitive composition and methods of manufacturing a semiconductor device
    6.
    发明申请
    Methods of forming a blocking pattern using a photosensitive composition and methods of manufacturing a semiconductor device 审中-公开
    使用光敏组合物形成阻挡图案的方法和制造半导体器件的方法

    公开(公告)号：US20090092931A1

    公开(公告)日：2009-04-09

    申请号：US12222573

    申请日：2008-08-12

    申请人： Kyong-Rim Kang ,  Young-Ho Kim ,  Jae-Hyun Kim ,  Sun-Yul Ahn ,  Nam-Uk Choi

    发明人： Kyong-Rim Kang ,  Young-Ho Kim ,  Jae-Hyun Kim ,  Sun-Yul Ahn ,  Nam-Uk Choi

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70466 ,  G03F7/038 ,  G03F7/0757 ,  G03F7/70425

    摘要： A method of forming a blocking pattern includes forming a preliminary blocking layer on first and second regions of a substrate, the preliminary blocking layer being formed of a photosensitive composition including a siloxane polymer, a cross-linking agent, a photoacid generator, and a thermal acid generator, selectively exposing to light a first portion of the preliminary blocking layer, the first portion of the preliminary blocking layer being formed on the first region of the substrate, such that a cross-linked pattern is formed on the first region of the substrate, and removing a second portion of the preliminary blocking layer, the second portion of the preliminary blocking layer being formed on the second region of the substrate.

    摘要翻译： 形成阻挡图案的方法包括在基板的第一和第二区域上形成预防止层，所述预阻挡层由包含硅氧烷聚合物，交联剂，光致酸发生剂和热的 酸性发生器，选择性地暴露预备阻挡层的第一部分的光，预先阻挡层的第一部分形成在衬底的第一区域上，使得在衬底的第一区域上形成交联图案 并且去除所述预阻挡层的第二部分，所述预阻挡层的第二部分形成在所述基板的第二区域上。

    Methods of forming a pattern using photoresist compositions
    7.
    发明授权
    Methods of forming a pattern using photoresist compositions 有权
    使用光致抗蚀剂组合物形成图案的方法

    公开(公告)号：US08247162B2

    公开(公告)日：2012-08-21

    申请号：US12662455

    申请日：2010-04-19

    申请人： Ji-Man Park ,  Young-Ho Kim ,  Hyo-Jin Yun ,  Sun-Yul Ahn ,  Song-Se Yi ,  Kyung-Woo Park

    发明人： Ji-Man Park ,  Young-Ho Kim ,  Hyo-Jin Yun ,  Sun-Yul Ahn ,  Song-Se Yi ,  Kyung-Woo Park

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0048 ,  G03F7/0046 ,  G03F7/0392

    摘要： A method of forming a pattern and a photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymerized photoresist additive, a polymer including an acid-labile protective group at a side chain, a photoacid generator, and a solvent; exposing the photoresist film; and forming a photoresist pattern by developing the photoresist film using an aqueous alkali developer, wherein the polymerized photoresist additive includes a hydrophilic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing an oxygen heteroatom in a heterocyclic ring substituted with at least three hydroxyl groups, and a hydrophobic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing a fluorinated aliphatic hydrocarbon group.

    摘要翻译： 一种形成图案和光致抗蚀剂组合物的方法，所述方法包括通过在其上涂覆光致抗蚀剂组合物在基底上形成光致抗蚀剂膜，光致抗蚀剂组合物包括聚合的光致抗蚀剂添加剂，在侧链上包含酸不稳定保护基的聚合物 ，光致酸发生剂和溶剂; 曝光光刻胶膜; 以及通过使用含水碱性显影剂显影所述光致抗蚀剂膜来形成光致抗蚀剂图案，其中所述聚合的光致抗蚀剂添加剂包括具有脂族烃骨架的亲水性重复单元和在至少三个羟基取代的杂环中含有氧杂原子的侧链 ，以及具有脂肪族烃主链和含有氟化脂肪族烃基的侧链的疏水性重复单元。

    Methods of forming a pattern using photoresist compositions
    8.
    发明申请
    Methods of forming a pattern using photoresist compositions 有权
    使用光致抗蚀剂组合物形成图案的方法

    公开(公告)号：US20100266966A1

    公开(公告)日：2010-10-21

    申请号：US12662455

    申请日：2010-04-19

    申请人： Ji-Man Park ,  Young-Ho Kim ,  Hyo-Jin Yun ,  Sun-Yul Ahn ,  Song-Se Yi ,  Kyung-Woo Park

    发明人： Ji-Man Park ,  Young-Ho Kim ,  Hyo-Jin Yun ,  Sun-Yul Ahn ,  Song-Se Yi ,  Kyung-Woo Park

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0048 ,  G03F7/0046 ,  G03F7/0392

    摘要： A method of forming a pattern and a photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymerized photoresist additive, a polymer including an acid-labile protective group at a side chain, a photoacid generator, and a solvent; exposing the photoresist film; and forming a photoresist pattern by developing the photoresist film using an aqueous alkali developer, wherein the polymerized photoresist additive includes a hydrophilic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing an oxygen heteroatom in a heterocyclic ring substituted with at least three hydroxyl groups, and a hydrophobic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing a fluorinated aliphatic hydrocarbon group.

    摘要翻译： 一种形成图案和光致抗蚀剂组合物的方法，所述方法包括通过在其上涂覆光致抗蚀剂组合物在基底上形成光致抗蚀剂膜，光致抗蚀剂组合物包括聚合的光致抗蚀剂添加剂，在侧链上包含酸不稳定保护基的聚合物 ，光致酸发生剂和溶剂; 曝光光刻胶膜; 以及通过使用含水碱性显影剂显影所述光致抗蚀剂膜来形成光致抗蚀剂图案，其中所述聚合的光致抗蚀剂添加剂包括具有脂族烃骨架的亲水性重复单元和在至少三个羟基取代的杂环中含有氧杂原子的侧链 ，以及具有脂肪族烃主链和含有氟化脂肪族烃基的侧链的疏水性重复单元。