公开(公告)号：US09087697B2

公开(公告)日：2015-07-21

申请号：US13890476

申请日：2013-05-09

申请人： Sung-Ho Kim ,  Min-Hwan Choi ,  Min-Ji Baek ,  Sang-Kyung Lee ,  Sang-Ho Jeon ,  Jong-Moo Huh

发明人： Sung-Ho Kim ,  Min-Hwan Choi ,  Min-Ji Baek ,  Sang-Kyung Lee ,  Sang-Ho Jeon ,  Jong-Moo Huh

IPC分类号： H01L21/02 ,  H01L21/66

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L22/12 ,  H01L22/20

摘要： A method for crystallizing a silicon substrate includes manufacturing a crystallized silicon test substrate that is crystallized by scanning excimer laser annealing beams with different energy densities on respective areas of an amorphous silicon test substrate, irradiating a surface of the crystallized silicon test substrate using a light source, and measuring reflectivity corresponding to the respective areas of the crystallized silicon test substrate in a visible light wavelength range, extracting average reflectivities of the respective areas of the crystallized silicon test substrate in wavelength ranges corresponding to respective colors, calculating an optimum energy density (OPED) index per energy density by using a value acquired by subtracting average reflectivity of red-based colors from average reflectivity of blue-based colors, selecting an optimal energy density, and crystallizing an amorphous silicon substrate using the optimal energy density.

摘要翻译： 一种硅衬底的结晶方法包括：制造结晶硅测试衬底，其通过在非晶硅测试衬底的各个区域上扫描具有不同能量密度的准分子激光退火光束而被结晶，使用光源照射结晶硅测试衬底的表面 ，并且在可见光波长范围内测量对应于结晶硅测试衬底的各个区域的反射率，提取结晶硅测试衬底的各个区域的平均反射率，其对应于各种颜色的波长范围，计算最佳能量密度（OPED ）通过使用通过从基于蓝色的颜色的平均反射率减去红色颜色的平均反射率而获得的值，选择最佳能量密度，并使用最佳能量密度结晶非晶硅衬底而获得的值。

公开(公告)号：US09293567B2

公开(公告)日：2016-03-22

申请号：US13828242

申请日：2013-03-14

申请人： Sung-Ho Kim ,  Min-Hwan Choi

发明人： Sung-Ho Kim ,  Min-Hwan Choi

IPC分类号： C30B1/04 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  B23K26/06 ,  B23K26/08

CPC分类号： H01L29/6675 ,  B23K26/0608 ,  B23K26/083 ,  H01L21/02002 ,  H01L21/02532 ,  H01L21/02675 ,  H01L27/1285 ,  H01L29/66757

摘要： A laser crystallization apparatus includes a laser generator that generates a laser beam, a stage mounted with an object substrate with an object thin film to which the laser beam is firstly incident, the stage is relatively movable such that the laser beam scans the object thin film for crystallization, and a reflection mirror that secondly reflects a second reflection laser beam to the object thin film from a first reflection laser beam that is reflected from the object thin film to the reflection mirror.

摘要翻译： 激光结晶装置包括产生激光束的激光发生器，安装有目标基板的载物台，激光束首先入射到该目标薄膜上，所述载物台相对移动，使得激光束扫描物体薄膜 以及反射镜，其从从物体薄膜反射到反射镜的第一反射激光束将第二反射激光束二次反射到物体薄膜。

公开(公告)号：US09099390B2

公开(公告)日：2015-08-04

申请号：US13451980

申请日：2012-04-20

申请人： Sung-Ho Kim ,  Do-Young Kim ,  Min-Chul Shin ,  Min-Hwan Choi ,  Jong-Moo Huh

发明人： Sung-Ho Kim ,  Do-Young Kim ,  Min-Chul Shin ,  Min-Hwan Choi ,  Jong-Moo Huh

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/67 ,  H01L27/12 ,  H01L27/32

CPC分类号： H01L21/268 ,  H01L21/67115 ,  H01L27/1229 ,  H01L27/1285 ,  H01L27/3262

摘要： A crystallization apparatus for crystallizing a semiconductor layer formed on a substrate, the crystallization apparatus including: a laser generator, which generates a laser beam, and a stage on which the substrate is mounted, where the semiconductor layer is divided into a plurality of crystallization areas and a plurality of non-crystallization areas, and the laser beam is radiated onto the crystallization areas a plurality of times to crystallize the crystallization areas, where the laser beam is radiated onto different positions of the same crystallization area a plurality of times.

摘要翻译： 一种用于结晶形成在基板上的半导体层的结晶装置，所述结晶装置包括：产生激光束的激光发生器和安装有所述基板的载物台，其中所述半导体层被分成多个结晶区域 和多个非结晶化区域，激光束多次照射到结晶​​化区域上，使结晶化区域结晶化，其中将激光束多次照射到相同结晶区域的不同位置上。

公开(公告)号：US20130115726A1

公开(公告)日：2013-05-09

申请号：US13451980

申请日：2012-04-20

申请人： Sung-Ho Kim ,  Do-Young Kim ,  Min-Chul Shin ,  Min-Hwan Choi ,  Jong-Moo Huh

发明人： Sung-Ho Kim ,  Do-Young Kim ,  Min-Chul Shin ,  Min-Hwan Choi ,  Jong-Moo Huh

IPC分类号： H01L51/56 ,  H01L21/268

CPC分类号： H01L21/268 ,  H01L21/67115 ,  H01L27/1229 ,  H01L27/1285 ,  H01L27/3262

摘要： A crystallization apparatus for crystallizing a semiconductor layer formed on a substrate, the crystallization apparatus including: a laser generator, which generates a laser beam, and a stage on which the substrate is mounted, where the semiconductor layer is divided into a plurality of crystallization areas and a plurality of non-crystallization areas, and the laser beam is radiated onto the crystallization areas a plurality of times to crystallize the crystallization areas, where the laser beam is radiated onto different positions of the same crystallization area a plurality of times.

摘要翻译： 一种用于结晶形成在基板上的半导体层的结晶装置，所述结晶装置包括：产生激光束的激光发生器和安装有所述基板的载物台，其中所述半导体层被分成多个结晶区域 和多个非结晶化区域，激光束多次照射到结晶​​化区域上，使结晶化区域结晶化，其中将激光束多次照射到相同结晶区域的不同位置上。