公开(公告)号：US09099390B2

公开(公告)日：2015-08-04

申请号：US13451980

申请日：2012-04-20

申请人： Sung-Ho Kim ,  Do-Young Kim ,  Min-Chul Shin ,  Min-Hwan Choi ,  Jong-Moo Huh

发明人： Sung-Ho Kim ,  Do-Young Kim ,  Min-Chul Shin ,  Min-Hwan Choi ,  Jong-Moo Huh

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/67 ,  H01L27/12 ,  H01L27/32

CPC分类号： H01L21/268 ,  H01L21/67115 ,  H01L27/1229 ,  H01L27/1285 ,  H01L27/3262

摘要： A crystallization apparatus for crystallizing a semiconductor layer formed on a substrate, the crystallization apparatus including: a laser generator, which generates a laser beam, and a stage on which the substrate is mounted, where the semiconductor layer is divided into a plurality of crystallization areas and a plurality of non-crystallization areas, and the laser beam is radiated onto the crystallization areas a plurality of times to crystallize the crystallization areas, where the laser beam is radiated onto different positions of the same crystallization area a plurality of times.

摘要翻译： 一种用于结晶形成在基板上的半导体层的结晶装置，所述结晶装置包括：产生激光束的激光发生器和安装有所述基板的载物台，其中所述半导体层被分成多个结晶区域 和多个非结晶化区域，激光束多次照射到结晶​​化区域上，使结晶化区域结晶化，其中将激光束多次照射到相同结晶区域的不同位置上。

公开(公告)号：US20130115726A1

公开(公告)日：2013-05-09

申请号：US13451980

申请日：2012-04-20

申请人： Sung-Ho Kim ,  Do-Young Kim ,  Min-Chul Shin ,  Min-Hwan Choi ,  Jong-Moo Huh

发明人： Sung-Ho Kim ,  Do-Young Kim ,  Min-Chul Shin ,  Min-Hwan Choi ,  Jong-Moo Huh

IPC分类号： H01L51/56 ,  H01L21/268

CPC分类号： H01L21/268 ,  H01L21/67115 ,  H01L27/1229 ,  H01L27/1285 ,  H01L27/3262

摘要： A crystallization apparatus for crystallizing a semiconductor layer formed on a substrate, the crystallization apparatus including: a laser generator, which generates a laser beam, and a stage on which the substrate is mounted, where the semiconductor layer is divided into a plurality of crystallization areas and a plurality of non-crystallization areas, and the laser beam is radiated onto the crystallization areas a plurality of times to crystallize the crystallization areas, where the laser beam is radiated onto different positions of the same crystallization area a plurality of times.

摘要翻译： 一种用于结晶形成在基板上的半导体层的结晶装置，所述结晶装置包括：产生激光束的激光发生器和安装有所述基板的载物台，其中所述半导体层被分成多个结晶区域 和多个非结晶化区域，激光束多次照射到结晶​​化区域上，使结晶化区域结晶化，其中将激光束多次照射到相同结晶区域的不同位置上。

公开(公告)号：US08507331B2

公开(公告)日：2013-08-13

申请号：US13449068

申请日：2012-04-17

申请人： Min-Chul Shin ,  Do-Young Kim ,  Yun-Gyu Lee ,  Jong-Moo Huh

发明人： Min-Chul Shin ,  Do-Young Kim ,  Yun-Gyu Lee ,  Jong-Moo Huh

IPC分类号： H01L21/00

CPC分类号： H01L27/3258 ,  H01L27/1285 ,  H01L51/5209

摘要： A method of manufacturing a display device includes forming a buffer layer on a top surface of a substrate, forming an amorphous silicon layer on a top surface of the buffer layer, and forming a polysilicon layer by irradiating the amorphous silicon layer with a laser beam. A plurality of first protrusions are formed on the top surface of the polysilicon layer, and a plurality of second protrusions are formed on a surface of the buffer layer by transferring the shape of the polysilicon layer to the buffer layer. A gate insulator on the buffer layer is then formed in the shape of bumps of the second protrusions.

摘要翻译： 一种制造显示装置的方法包括在衬底的顶表面上形成缓冲层，在缓冲层的顶表面上形成非晶硅层，并通过用激光束照射非晶硅层来形成多晶硅层。 在多晶硅层的顶表面上形成有多个第一突起，并且通过将多晶硅层的形状转移到缓冲层，在缓冲层的表面上形成多个第二突起。 然后，缓冲层上的栅极绝缘体形成为第二突起的凸块的形状。

公开(公告)号：US20120301985A1

公开(公告)日：2012-11-29

申请号：US13449068

申请日：2012-04-17

申请人： Min-Chul Shin ,  Do-Young Kim ,  Yun-Gyu Lee ,  Jong-Moo Huh

发明人： Min-Chul Shin ,  Do-Young Kim ,  Yun-Gyu Lee ,  Jong-Moo Huh

IPC分类号： H01L21/336 ,  H01L33/16

CPC分类号： H01L27/3258 ,  H01L27/1285 ,  H01L51/5209

摘要： A method of manufacturing a display device includes forming a buffer layer on a top surface of a substrate, forming an amorphous silicon layer on a top surface of the buffer layer, and forming a polysilicon layer by irradiating the amorphous silicon layer with a laser beam. A plurality of first protrusions are formed on the top surface of the polysilicon layer, and a plurality of second protrusions are formed on a surface of the buffer layer by transferring the shape of the polysilicon layer to the buffer layer. A gate insulator on the buffer layer is then formed in the shape of bumps of the second protrusions.

摘要翻译： 一种制造显示装置的方法包括在衬底的顶表面上形成缓冲层，在缓冲层的顶表面上形成非晶硅层，并通过用激光束照射非晶硅层来形成多晶硅层。 在多晶硅层的顶表面上形成有多个第一突起，并且通过将多晶硅层的形状转移到缓冲层，在缓冲层的表面上形成多个第二突起。 然后，缓冲层上的栅极绝缘体形成为第二突起的凸块的形状。

公开(公告)号：US20120267629A1

公开(公告)日：2012-10-25

申请号：US13330477

申请日：2011-12-19

申请人： Min-Chul Shin ,  Do-Young Kim ,  Yun-Gyu Lee ,  Jong-Moo Huh

发明人： Min-Chul Shin ,  Do-Young Kim ,  Yun-Gyu Lee ,  Jong-Moo Huh

IPC分类号： H01L33/08

CPC分类号： H01L51/5271 ,  H01L27/3244

摘要： In an organic light-emitting display apparatus for improving image quality and a method of manufacturing the same, the organic light-emitting display apparatus comprises a substrate, a first electrode disposed on the substrate, an intermediate layer disposed on the first electrode and including an organic emission layer, a second electrode disposed on the intermediate layer, and a reflective unit disposed near the intermediate layer and reflecting visible light emitted from the intermediate layer.

摘要翻译： 在用于提高图像质量的有机发光显示装置及其制造方法中，有机发光显示装置包括基板，设置在基板上的第一电极，设置在第一电极上的中间层， 有机发光层，设置在中间层上的第二电极，以及设置在中间层附近并反射从中间层发射的可见光的反射单元。

公开(公告)号：US09153793B2

公开(公告)日：2015-10-06

申请号：US13330477

申请日：2011-12-19

申请人： Min-Chul Shin ,  Do-Young Kim ,  Yun-Gyu Lee ,  Jong-Moo Huh

发明人： Min-Chul Shin ,  Do-Young Kim ,  Yun-Gyu Lee ,  Jong-Moo Huh

IPC分类号： H01L51/52 ,  H01L27/32

CPC分类号： H01L51/5271 ,  H01L27/3244

摘要： In an organic light-emitting display apparatus for improving image quality and a method of manufacturing the same, the organic light-emitting display apparatus comprises a substrate, a first electrode disposed on the substrate, an intermediate layer disposed on the first electrode and including an organic emission layer, a second electrode disposed on the intermediate layer, and a reflective unit disposed near the intermediate layer and reflecting visible light emitted from the intermediate layer.

摘要翻译： 在用于提高图像质量的有机发光显示装置及其制造方法中，有机发光显示装置包括基板，设置在基板上的第一电极，设置在第一电极上的中间层， 有机发光层，设置在中间层上的第二电极以及设置在中间层附近并反射从中间层发射的可见光的反射单元。

公开(公告)号：US09087697B2

公开(公告)日：2015-07-21

申请号：US13890476

申请日：2013-05-09

申请人： Sung-Ho Kim ,  Min-Hwan Choi ,  Min-Ji Baek ,  Sang-Kyung Lee ,  Sang-Ho Jeon ,  Jong-Moo Huh

发明人： Sung-Ho Kim ,  Min-Hwan Choi ,  Min-Ji Baek ,  Sang-Kyung Lee ,  Sang-Ho Jeon ,  Jong-Moo Huh

IPC分类号： H01L21/02 ,  H01L21/66

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L22/12 ,  H01L22/20

摘要： A method for crystallizing a silicon substrate includes manufacturing a crystallized silicon test substrate that is crystallized by scanning excimer laser annealing beams with different energy densities on respective areas of an amorphous silicon test substrate, irradiating a surface of the crystallized silicon test substrate using a light source, and measuring reflectivity corresponding to the respective areas of the crystallized silicon test substrate in a visible light wavelength range, extracting average reflectivities of the respective areas of the crystallized silicon test substrate in wavelength ranges corresponding to respective colors, calculating an optimum energy density (OPED) index per energy density by using a value acquired by subtracting average reflectivity of red-based colors from average reflectivity of blue-based colors, selecting an optimal energy density, and crystallizing an amorphous silicon substrate using the optimal energy density.

摘要翻译： 一种硅衬底的结晶方法包括：制造结晶硅测试衬底，其通过在非晶硅测试衬底的各个区域上扫描具有不同能量密度的准分子激光退火光束而被结晶，使用光源照射结晶硅测试衬底的表面 ，并且在可见光波长范围内测量对应于结晶硅测试衬底的各个区域的反射率，提取结晶硅测试衬底的各个区域的平均反射率，其对应于各种颜色的波长范围，计算最佳能量密度（OPED ）通过使用通过从基于蓝色的颜色的平均反射率减去红色颜色的平均反射率而获得的值，选择最佳能量密度，并使用最佳能量密度结晶非晶硅衬底而获得的值。

公开(公告)号：US08304981B2

公开(公告)日：2012-11-06

申请号：US12433093

申请日：2009-04-30

申请人： Mu-Gyeom Kim ,  Byoung-Seong Jeong ,  Seong-Kweon Heo ,  Min-Chul Shin ,  Jong-Moo Huh ,  Chang-Mo Park

发明人： Mu-Gyeom Kim ,  Byoung-Seong Jeong ,  Seong-Kweon Heo ,  Min-Chul Shin ,  Jong-Moo Huh ,  Chang-Mo Park

IPC分类号： H01L51/00

CPC分类号： H01L27/3262 ,  H01L27/3246 ,  H01L27/3272 ,  H01L2251/305

摘要： An organic light emitting diode display includes a substrate. A control electrode is on the substrate. A gate insulating film covers the control electrode. An input electrode and an output electrode are on the gate insulating film and face each other. An oxide semiconductor is between the input electrode and the output electrode and on the control electrode. A pixel electrode is on portions of the edges of the output electrode and is electrically connected. An organic light emitting member is on the pixel electrode. A common electrode is on the organic light emitting member. The oxide semiconductor and the pixel electrode may be of the same layer.

摘要翻译： 有机发光二极管显示器包括基板。 控制电极在基板上。 栅极绝缘膜覆盖控制电极。 输入电极和输出电极在栅极绝缘膜上并且彼此面对。 氧化物半导体位于输入电极和输出电极之间以及控制电极上。 像素电极在输出电极的边缘的部分上并且电连接。 有机发光部件在像素电极上。 公共电极在有机发光部件上。 氧化物半导体和像素电极可以是相同的层。

公开(公告)号：US08563978B2

公开(公告)日：2013-10-22

申请号：US13084741

申请日：2011-04-12

申请人： Min-Chul Shin ,  Jong-Moo Huh ,  Bong-Ju Kim ,  Yun-Gyu Lee

发明人： Min-Chul Shin ,  Jong-Moo Huh ,  Bong-Ju Kim ,  Yun-Gyu Lee

IPC分类号： H01L33/08

CPC分类号： H01L51/0023 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3262 ,  H01L51/5203 ,  H01L2227/323

摘要： A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the gate insulating layer pattern, an interlayer insulating layer on the polycrystalline silicon film pattern, a plurality of first contact holes through the gate insulating layer pattern and the interlayer insulating layer to expose a portion of the first conductive film pattern, a plurality of second contact holes through the interlayer insulating layer to expose a portion of the polycrystalline silicon film pattern, and a second conductive film pattern including a source electrode, a drain electrode, and a pixel electrode on the interlayer insulating layer.

公开(公告)号：US08716040B2

公开(公告)日：2014-05-06

申请号：US13113279

申请日：2011-05-23

申请人： Min-Chul Shin ,  Jong-Moo Huh ,  Bong-Ju Kim ,  Yun-Gyu Lee

发明人： Min-Chul Shin ,  Jong-Moo Huh ,  Bong-Ju Kim ,  Yun-Gyu Lee

IPC分类号： H01L21/00

CPC分类号： H01L51/56 ,  H01L27/1288 ,  H01L27/3248

摘要： An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern.

摘要翻译： 一种有机发光二极管（OLED）显示器及其制造方法，所述OLED显示器包括：基板主体; 包括形成在所述基板主体上的多晶有源层和第一电容器电极的多晶硅层图案; 形成在所述多晶硅层图案上的栅极绝缘层图案; 形成在所述栅极绝缘层图案上的包括栅电极和第二电容电极的第一导电层图案; 形成在所述第一导电层图案上的层间绝缘层图案; 以及包括形成在层间绝缘层图案上的源电极，漏电极和像素电极的第二导电层图案。 栅极绝缘层图案与多晶硅层图案和第一导电层图案中的任一个同时被图案化。