公开(公告)号：US06582883B2

公开(公告)日：2003-06-24

申请号：US09891029

申请日：2001-06-25

申请人： Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

发明人： Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

IPC分类号： G03C176

CPC分类号： G03F7/091 ,  C08F220/36 ,  C08F220/40 ,  C08F2220/281 ,  C08F2220/325

摘要： An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the said organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and improve the production yields. Another advantage is the ability to control the k value.

摘要翻译： 具有下列通式1的有机抗反射聚合物，其制备方法，包含所述有机抗反射聚合物的抗反射涂料组合物和由其制备的抗反射涂层的制备方法。 包含该聚合物的抗反射涂层消除了由晶片上的下层的光学性质引起的驻波以及光致抗蚀剂的厚度变化，从而防止由这种较低层衍射的和反射的光引起的背反射和CD变化。 这样的优点使得能够形成适合于64M，256M，1G，4G和16G DRAM半导体器件的稳定超细格局，并提高了产量。 另一个优点是能够控制k值。

公开(公告)号：US06602650B2

公开(公告)日：2003-08-05

申请号：US10099295

申请日：2002-03-13

申请人： Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

发明人： Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

IPC分类号： G03C176

CPC分类号： C08F220/36 ,  C07C251/54 ,  C08F220/40 ,  G03F7/091 ,  Y10S430/111 ,  C08F2220/281 ,  C08F216/38

摘要： A compound of Formula 10, an organic anti-reflective polymer having the structure of Formula 1 synthesized from the compound of Formula 1 and a preparation method thereof. An anti-reflective coating composition including the above organic anti-reflective polymer, as well as a preparation method of an anti-reflective coating. The anti-reflective coating comprising the disclosed polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the changes in the thickness of the photoresist, prevents back reflection and also solves the problem of CD alteration cause by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and an increase of the production yields. Further, it is also possible to control the k value

摘要翻译： 式10的化合物，由式1化合物合成的具有结构式1的有机抗反射聚合物及其制备方法。 包含上述有机抗反射聚合物的抗反射涂料组合物以及抗反射涂层的制备方法。 包含所公开的聚合物的抗反射涂层消除了由晶片上的下层的光学性质引起的驻波以及光致抗蚀剂的厚度变化，防止背反射，并且还解决了衍射和 来自这种较低层的反射光。 这样的优点使得能够形成适合于64M，256M，1G，4G和16G DRAM半导体器件的稳定的超细格局，并且提高了产量。 此外，还可以控制k值

公开(公告)号：US06599678B2

公开(公告)日：2003-07-29

申请号：US09888829

申请日：2001-06-25

申请人： Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

发明人： Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

IPC分类号： G03C176

CPC分类号： G03F7/091 ,  C08F220/36 ,  Y10S430/106 ,  Y10S430/111

摘要： An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the said organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the disclosed polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and improve the production yields. Further, it is also possible to control the k value and the increased hydrophobicity facilitates EBR (Edge Bead Removal).

公开(公告)号：US06562925B2

公开(公告)日：2003-05-13

申请号：US09891004

申请日：2001-06-25

申请人： Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

发明人： Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

IPC分类号： C08F11802

CPC分类号： C08F220/28 ,  C08F220/18 ,  C08F220/36 ,  G03F7/091 ,  Y10S428/901 ,  Y10S430/151 ,  Y10T428/24917 ,  Y10T428/31504 ,  Y10T428/31667

摘要： An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices, improving the production yields and controlling the k values. It is also possible to prevent undercutting due to an unbalanced acidity after finishing the coating.

摘要翻译： 具有下式1的有机抗反射聚合物，其制备方法，包含有机抗反射聚合物的抗反射涂料组合物和由其制备的抗反射涂层的制备方法。 包含该聚合物的抗反射涂层消除了由晶片上的下层的光学性质引起的驻波以及光致抗蚀剂的厚度变化，从而防止由这种较低层衍射的和反射的光引起的背反射和CD变化。 这样的优点使得能够形成适用于64M，256M，1G，4G和16G DRAM半导体器件的稳定超细格局，提高了产量并控制了k值。 也可以防止在涂覆完成后由于不均衡的酸度引起的底切。

公开(公告)号：US06486283B2

公开(公告)日：2002-11-26

申请号：US09888893

申请日：2001-06-25

申请人： Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

发明人： Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

IPC分类号： C08F22010

CPC分类号： C08F220/36 ,  G03F7/091

摘要： An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the said organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices, improves production yields and enables control of the k value. Further, it is also possible to prevent undercutting due to an unbalanced acidity after finishing the coating.

摘要翻译： 具有下列通式1的有机抗反射聚合物，其制备方法，包含所述有机抗反射聚合物的抗反射涂料组合物和由其制备的抗反射涂层的制备方法。 包含该聚合物的抗反射涂层消除了由晶片上的下层的光学性能引起的驻波以及光致抗蚀剂的厚度变化，从而防止由这种较低层衍射的和反射光引起的背反射和CD变化。 这样的优点使得能够形成适合于64M，256M，1G，4G和16G DRAM半导体器件的稳定超细格局，提高了生产成本并且能够控制k值。 此外，还可以防止在涂覆完成后由于不均衡的酸度引起的底切。

公开(公告)号：US06770720B2

公开(公告)日：2004-08-03

申请号：US10313480

申请日：2002-12-04

申请人： Jae-chang Jung ,  Keun-kyu Kong ,  Min-ho Jung ,  Sung-eun Hong ,  Ki-ho Baik

发明人： Jae-chang Jung ,  Keun-kyu Kong ,  Min-ho Jung ,  Sung-eun Hong ,  Ki-ho Baik

IPC分类号： C08F21634

CPC分类号： C08F220/28 ,  C08F212/08 ,  G03F7/091

摘要： Disclosed is an organic anti-reflective film composition suitable for use in submicrolithography, comprising a compound of Formula 13 and a compound of Formula 14. The organic anti-reflective film effectively absorbs the light penetrating through the photoresist film coated on top of the anti-reflective film, thereby greatly reducing the standing wave effect. Use of organic anti-reflective films of the present invention allows patterns to be formed in a well-defined, ultrafine configuration, providing a great contribution to the high integration of semiconductor devices. wherein b, c, R′, R″, R1, R2, R3, and R4 are those defined herein.

摘要翻译： 公开了一种适用于亚微光刻的有机抗反射膜组合物，其包含式13化合物和式14化合物。有机抗反射膜有效地吸收穿透抗反射膜顶部的光致抗蚀剂膜的光， 反射膜，从而大大降低了驻波效应。 使用本发明的有机抗反射膜允许以明确限定的超细结构形成图案，为半导体器件的高集成度提供了巨大的贡献。其中b，c，R'，R“，R1 ，R2，R3和R4是本文定义的那些。

公开(公告)号：US06610616B2

公开(公告)日：2003-08-26

申请号：US09888661

申请日：2001-06-25

申请人： Cha-won Koh ,  Sung-eun Hong ,  Min-ho Jung ,  Jin-soo Kim ,  Geun-su Lee ,  Jae-chang Jung

发明人： Cha-won Koh ,  Sung-eun Hong ,  Min-ho Jung ,  Jin-soo Kim ,  Geun-su Lee ,  Jae-chang Jung

IPC分类号： H01L2131

CPC分类号： G03F7/11 ,  G03F7/091

摘要： A method for forming a micro-pattern of a semiconductor substrate, and more particularly, to a method for preventing defects in a photoresist pattern, such as undercut or footing, due to inter-mixing between an organic anti-reflective coating and a photoresist by forming a carbonized layer on the surface of the organic anti-reflective coating by a curing process like ion implantation or E-beam curing.

公开(公告)号：US06956091B2

公开(公告)日：2005-10-18

申请号：US10438531

申请日：2003-05-14

申请人： Sung-eun Hong ,  Min-ho Jung ,  Ki-ho Baik

发明人： Sung-eun Hong ,  Min-ho Jung ,  Ki-ho Baik

IPC分类号： C07C317/22 ,  C07C303/28 ,  C07C309/73 ,  C08F2/06 ,  C08F4/04 ,  C08F4/34 ,  C08F20/38 ,  C08F20/58 ,  C08F220/38 ,  C09D5/00 ,  C09D133/14 ,  C09D163/00 ,  C08F124/00

CPC分类号： C08F20/58 ,  C07C303/28 ,  C07C309/73

摘要： The present invention relates to organic anti-reflective coating polymers suitable for use in a semiconductor device during a photolithograhy process for forming ultrafine patterns using 193 nm ArF beam radiation, and preparation method therefor. Anti-reflective coating polymers of the present invention contain a monomer having a pendant phenyl group having high absorbency at the 193 nm wavelength. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming ultrafine patterns, the polymers eliminate the standing waves caused by changes in the thickness of the overlying photosensitive film, by the spectroscopic property of lower layers on wafer and by changes in CD due to diffractive and reflective light originating from the lower layers. Use of the anti-reflective coating of the present invention results in the stable formation of ultrafine patters suitable for 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices and a great improvement in the production yield.The present invention also relates to anti-reflective coating compositions containing these polymers and to the anti-reflective coatings formed from these compositions, as well as preparation methods therefor.

摘要翻译： 本发明涉及一种适用于半光装置的有机抗反射涂层聚合物，其用于使用193nm ArF光束辐射形成超细纹图案的光刻方法及其制备方法。 本发明的抗反射涂层聚合物含有在193nm波长处具有高吸收性的侧基苯基的单体。 当本发明的聚合物在用于形成超细图案的光刻工艺中的抗反射涂层中使用时，聚合物消除由上覆感光膜的厚度变化引起的驻波，通过下层的分光特性 晶片以及由于来自下层的衍射和反射光引起的CD变化。 使用本发明的抗反射涂层可以稳定地形成适用于64M，256M，1G，4G和16G DRAM半导体器件的超微图案，并且可以大大提高生产率。 本发明还涉及含有这些聚合物和由这些组合物形成的抗反射涂层的抗反射涂料组合物及其制备方法。

公开(公告)号：US06489423B2

公开(公告)日：2002-12-03

申请号：US10095852

申请日：2002-03-11

申请人： Min-ho Jung ,  Sung-eun Hong ,  Ki-ho Baik

发明人： Min-ho Jung ,  Sung-eun Hong ,  Ki-ho Baik

IPC分类号： C08F22012

CPC分类号： C08F220/34 ,  C07C251/66 ,  C08F2220/281 ,  C08F2220/325 ,  C08F220/14

摘要： Polymers are disclosed having the following formula 1 or 2: Polymers of the present invention can be used as an ARC material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain a chromophore substituent that exhibits sufficient absorbance at the wavelengths useful for the submicrolithography process. The ARC prevents back reflection of light from lower layers and the alteration of the CD by diffracted and reflected light from the lower layers. The ARC also eliminates standing waves and reflective notching due to the optical properties of lower layers on the wafer and to changes in the thickness of the photosensitive film applied thereon, thereby resulting in the stable formation of ultrafine patterns suitable for 64 M, 256 M, 1 G, 4 G and 16 G DRAMs and a great improvement in the production yield.

摘要翻译： 公开了具有下式1或2的聚合物：本发明的聚合物可以用作ARC光学材料，用于使用248nm KrF，193nm ArF和157nm F2激光的亚微光刻工艺。 聚合物含有在用于亚微光刻工艺的波长处表现出足够吸光度的发色团取代基。 ARC防止来自下层的光的背反射和来自下层的衍射和反射光的CD的改变。 由于晶片上的较低层的光学性质和施加在其上的感光膜的厚度的变化，ARC还消除了驻波和反射凹陷，从而导致适合于64M，256M， 1G，4G和16G DRAM，并且生产产量大大提高。