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公开(公告)号：US5431741A
公开(公告)日：1995-07-11
申请号：US166384
申请日：1993-12-13
IPC分类号： H01L31/0224 , H01L31/0352 , H01L31/042 , H01L31/05
CPC分类号： H01L31/035281 , H01L31/022433 , Y02E10/50
摘要： A novel structure of a silicon solar cell is disclosed, which can be prepared at an outstandingly low cost but can still exhibit good efficiency for the conversion of solar energy to electricity. The silicon solar cell comprises, as an integral body:(a) an electrically insulating substrate plate of, e.g., glass or a ceramic;(b1) a first group of metal contact lines formed in parallel with each other on the substrate surface to jointly serve as an electrode; (b2) a second group of metal contact lines formed in parallel with each other on the substrate surface to jointly serve as a counterelectrode, each of the metal contact lines of the second group being disposed between two metal contact lines of the first group, maintaining electric insulation therebetween; and(c) a plural number of wires of silicon semiconductor, each of which perpendicularly crosses each of the metal contact lines of the first and second groups in direct contact therewith. When the silicon semiconductor is of the n-type, for example, and has discrete p-type regions which are in contact with the metal contact lines of one of the groups, photovoltaic power is generated between the electrodes under irradiation with sunlight. An alternative arrangement of the silicon semiconductor wires is also proposed in which each of the silicon wires bridges a metal contact line of the first group and a metal contact line of the second group in lengthwise contact therewith.
摘要翻译： 公开了一种硅太阳能电池的新型结构，其可以以非常低的成本制备，但仍然可以显示出将太阳能转换成电的良好效率。 硅太阳能电池包括作为一体的主体：（a）例如玻璃或陶瓷的电绝缘基板; （b1）在基板表面上彼此平行地形成的第一组金属接触线，以共同地用作电极; （b2）在基板表面上彼此平行地形成的第二组金属接触线，以共同用作反电极，第二组的每个金属接触线设置在第一组的两个金属接触线之间，保持 电绝缘; 和（c）多个数量的硅半导体的导线，其中的每一个与第一和第二组的金属接触线的每一个垂直地交叉直接接触。 例如，当硅半导体为n型时，具有与这些组中的一个的金属接触线接触的离散p型区域，在阳光照射下在电极之间产生光伏电力。 还提出了硅半导体布线的替代布置，其中每个硅线桥接第一组的金属接触线和第二组的金属接触线与其纵向接触。
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公开(公告)号：US5667585A
公开(公告)日：1997-09-16
申请号：US579350
申请日：1995-12-27
摘要： Proposed is a low-cost method for the preparation of a wire-formed crystal of silicon having a diameter of 1 mm or smaller, in which a vertically held starting rod of silicon is melted at one end portion by high-frequency induction heating, a seed crystal is brought into contact with the molten portion and then the seed crystal and the starting silicon rod are pulled apart in the vertical direction at a controlled velocity with a controlled high-frequency power input so that the melt of silicon drawn by the seed crystal is solidified and crystallized into the form of a wire.
摘要翻译： 提出了一种低成本的制备直径为1mm以下的硅线状晶体的低成本方法，其中通过高频感应加热在一端部将垂直保持的硅起始棒熔化， 使晶种与熔融部分接触，然后晶体和起始硅棒以受控的高频功率输入以受控的速度在垂直方向上拉开，使得由晶种吸收的硅熔体 被固化并结晶成线的形式。
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