公开(公告)号：US20140037846A1

公开(公告)日：2014-02-06

申请号：US13943523

申请日：2013-07-16

Applicant: Synos Technology, Inc.

Inventor： Sang In Lee ,  Il Song Lee

IPC: B05C3/00 ,  B05D1/00

CPC classification number: B05C3/005 ,  B05D1/00 ,  C23C16/45551 ,  C23C16/4557

Abstract: Heating of precursor before exposing the substrate to the precursor for depositing material on the substrate using a deposition method (e.g., ALD, MLD or CVD). A reactor for injecting precursor onto the substrate includes a heater placed in a path between a channel connected to a source of the precursor and a reaction chamber of the reactor. As the precursor passes the heater, the precursor is heated to a temperature conducive to the deposition process. Alternatively or in addition to the heater, the reactor may inject a heated gas that mixes with the precursor to increase the temperature of the precursor before exposing the substrate to the precursor.

Abstract translation: 在使用沉积方法（例如，ALD，MLD或CVD）将衬底暴露于前体以在衬底上沉积材料之前加热前体。 用于将前体注入到基底上的反应器包括放置在连接到前体源的通道和反应器的反应室之间的路径中的加热器。 当前体通过加热器时，将前体加热到有利于沉积过程的温度。 或者或加热器之外，反应器可以注入与前体混合的加热气体，以在将衬底暴露于前体之前增加前体的温度。