公开(公告)号：US09177788B2

公开(公告)日：2015-11-03

申请号：US13773222

申请日：2013-02-21

Applicant: Synos Technology, Inc.

Inventor： Sang In Lee ,  Ilsong Lee ,  Hyo Seok Yang

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32

CPC classification number: H01L21/322 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45591 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/32623 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/0228

Abstract: Placing a conductive member between a plasma chamber in a remote plasma reactor and a substrate to shield the substrate from irradiation of undesirable electromagnetic radiation, ions or electrons. The conductive member blocks the electromagnetic radiation, neutralizes ions and absorbs the electrons. Radicals generated in the plasma chambers flows to the substrate despite the placement of the conductive member. In this way, the substrate is exposed to the radicals whereas damages to the substrate due to electromagnetic radiations, ions or electrons are reduced or removed.

Abstract translation: 将导电构件放置在远程等离子体反应器中的等离子体室和基板之间，以屏蔽基板免受不需要的电磁辐射，离子或电子的照射。 导电构件阻挡电磁辐射，中和离子并吸收电子。 在等离子体室中产生的自由基流过衬底，尽管导电构件的放置。 以这种方式，衬底暴露于自由基，同时减少或去除由电磁辐射，离子或电子引起的对衬底的损伤。

公开(公告)号：US20130337172A1

公开(公告)日：2013-12-19

申请号：US13904825

申请日：2013-05-29

Applicant: Synos Technology, Inc.

Inventor： Sang In Lee

IPC: C23C16/455

CPC classification number: C23C16/455 ,  C23C16/45551

Abstract: Embodiments relate to a structure of reactors in a deposition device that enables efficient removal of excess material deposited on a substrate by using multiple-staged Venturi effect. In a reactor, constriction zones of different height are formed between injection chambers and an exhaust portion. As purge gas or precursor travels from injection chambers to the exhaust portion and passes the constriction zones, the pressure of the gas drops and the speed of the gas increase. Such changes in the pressure and speed facilitate removal of excess material deposited on the substrate.

Abstract translation: 实施例涉及沉积装置中的反应器的结构，其能够通过使用多级文丘里效应有效地去除沉积在基底上的多余材料。 在反应器中，在注射室和排气部分之间形成不同高度的收缩区域。 当吹扫气体或前体从注射室行进到排气部分并且通过收缩区域时，气体的压力下降并且气体的速度增加。 压力和速度的这种变化有助于去除沉积在基底上的多余材料。

公开(公告)号：US09051637B2

公开(公告)日：2015-06-09

申请号：US13666840

申请日：2012-11-01

Applicant: Synos Technology, Inc.

Inventor： Sang In Lee

IPC: C23C16/04 ,  G03F7/12 ,  H01L51/00

CPC classification number: C23C16/042 ,  G03F7/12 ,  H01L51/0011

Abstract: Embodiments relate to a structure for securing a shadow mask and a susceptor where the top surface of the shadow mask mounted with the susceptor is flush with the top surface of the susceptor. When the susceptor is mounted with the shadow mask, the entire top surface of the susceptor and the shadow mask is substantially coplanar. A substrate onto which material is deposited is placed below the shadow mask. The susceptor moves below reactors for injecting materials or radicals. Since the entire top surface of the susceptor is substantially flat, the vertical distance between the reactors and the susceptor can be reduced, contributing to the overall quality of the layer formed on the substrate and reducing the materials wasted by leaking outside the gap between the susceptor and the reactors.

Abstract translation: 实施例涉及用于固定荫罩和基座的结构，其中安装有基座的荫罩的顶表面与基座的顶表面齐平。 当基座安装有荫罩时，基座的整个顶表面和荫罩基本上共面。 将沉积有材料的基板放置在荫罩下方。 感受器在反应器下方移动，用于注入材料或自由基。 由于基座的整个顶表面基本上是平坦的，因此能够减小反应器和基座之间的垂直距离，从而有助于在基板上形成的层的整体质量，并且减少由于基座之间的间隙泄漏而浪费的材料 和反应堆。

公开(公告)号：US09145608B2

公开(公告)日：2015-09-29

申请号：US13849477

申请日：2013-03-23

Applicant: Synos Technology, Inc.

Inventor： Samuel S. Pak ,  Sang In Lee ,  Ilsong Lee ,  Hyo Seok Yang

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45544 ,  C23C16/4412 ,  C23C16/45551 ,  C23C16/45561 ,  C23C16/45589

Abstract: An injection module assembly (IMA) that moves along a predetermined path to inject gas onto a substrate and discharge excess gas is described. The IMA may be used for processing a substrate that is difficult to move for various reasons such as a large size and weight of the substrate. The IMA is connected to one or more sets of jointed arms with structures to provide one or more paths for injecting the gas or discharging the excess gas. The IMA is moved by a first driving mechanism (e.g., linear motor) and the jointed arms are separately operated by a second driving mechanism (e.g., pulleys and cables) to reduce force or torque caused by the weight of the jointed arms. The movement of the first driving mechanism and the second driving mechanism is synchronized to move the IMA and the jointed arms.

Abstract translation: 描述了沿着预定路径移动以将气体注入基板并排出多余气体的注射模块组件（IMA）。 IMA可以用于处理由于各种原因（例如基板的大尺寸和重量）而难以移动的基板。 IMA连接到具有结构的一组或多组接合臂，以提供用于喷射气体或排出多余气体的一个或多个路径。 IMA由第一驱动机构（例如，线性马达）移动，并且连接的臂由第二驱动机构（例如，滑轮和电缆）分开操作，以减少由连接的臂的重量引起的力或扭矩。 第一驱动机构和第二驱动机构的运动被同步以移动IMA和连接臂。

公开(公告)号：US20140065307A1

公开(公告)日：2014-03-06

申请号：US13966103

申请日：2013-08-13

Applicant: Synos Technology, Inc.

Inventor： Sang In Lee

IPC: B05C3/00 ,  B05D1/40

CPC classification number: B05C3/005 ,  B05D1/40 ,  C23C16/45551 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/463

Abstract: Cooling a heated substrate undergoing a deposition process (e.g., ALD, MLD or CVD) and a deposition reactor for performing the deposition process by routing a cooled purge gas through a path in the deposition reactor and then injecting the cooled purge gas onto the substrate. The deposition reactor may include a heater to heat precursor. As the precursor passes the heater, the precursor is heated to a temperature conducive to the deposition process. As a result of operating the heater and routing the heated precursor, the temperature of the substrate and the deposition reactor may be increased. To drop the temperature of the substrate and the deposition reactor, a purge gas cooled to a temperature lower than the heated precursor is injected onto the substrate via the deposition reactor

Abstract translation: 冷却经历沉积工艺（例如ALD，MLD或CVD）的加热衬底和沉积反应器，用于通过将冷却的吹扫气体穿过沉积反应器中的路径，然后将冷却的吹扫气体注入到衬底上来执行沉积工艺。 沉积反应器可以包括加热器以加热前体。 当前体通过加热器时，将前体加热到有利于沉积过程的温度。 作为操作加热器并布置加热的前体的结果，可以增加基板和沉积反应器的温度。 为了降低基板和沉积反应器的温度，将冷却到低于被加热前体的温度的吹扫气体经由沉积反应器

公开(公告)号：US20140037846A1

公开(公告)日：2014-02-06

申请号：US13943523

申请日：2013-07-16

Applicant: Synos Technology, Inc.

Inventor： Sang In Lee ,  Il Song Lee

IPC: B05C3/00 ,  B05D1/00

CPC classification number: B05C3/005 ,  B05D1/00 ,  C23C16/45551 ,  C23C16/4557

Abstract: Heating of precursor before exposing the substrate to the precursor for depositing material on the substrate using a deposition method (e.g., ALD, MLD or CVD). A reactor for injecting precursor onto the substrate includes a heater placed in a path between a channel connected to a source of the precursor and a reaction chamber of the reactor. As the precursor passes the heater, the precursor is heated to a temperature conducive to the deposition process. Alternatively or in addition to the heater, the reactor may inject a heated gas that mixes with the precursor to increase the temperature of the precursor before exposing the substrate to the precursor.

Abstract translation: 在使用沉积方法（例如，ALD，MLD或CVD）将衬底暴露于前体以在衬底上沉积材料之前加热前体。 用于将前体注入到基底上的反应器包括放置在连接到前体源的通道和反应器的反应室之间的路径中的加热器。 当前体通过加热器时，将前体加热到有利于沉积过程的温度。 或者或加热器之外，反应器可以注入与前体混合的加热气体，以在将衬底暴露于前体之前增加前体的温度。

公开(公告)号：US20140030447A1

公开(公告)日：2014-01-30

申请号：US13742148

申请日：2013-01-15

Applicant: Synos Technology, Inc.

Inventor： Sang In Lee ,  Chang Wan Hwang

IPC: C23C16/26

CPC classification number: C23C16/26 ,  C23C16/452 ,  H01J37/32082

Abstract: Depositing a layer of graphene or conjugate carbons on a surface of a substrate using carbon radicals generated by exposing a carbon material to radicals of a gas. The radicals of the gas are generated by injecting the gas into a plasma chamber and then applying voltage difference to electrodes within or surrounding the plasma chamber. The radicals of the gas come into contact with the carbon material (e.g., graphite) and excite carbon radicals. The excited carbon radicals are injected onto the surface of the substrate, passes through a constriction zone of the reactor assembly and are then exhausted through a discharge portion of the reactor assembly. When the excited carbon radicals come into contact with the substrate, the carbon radicals form a layer of graphene or conjugated carbons on the substrate.

Abstract translation: 使用通过将碳材料暴露于气体的自由基而产生的碳自由基，在基体的表面上沉积一层石墨烯或共轭碳。 气体的自由基通过将气体注入到等离子体室中，然后将电压差施加到等离子体室内或周围的电极而产生。 气体的自由基与碳材料（例如石墨）接触并激发碳自由基。 将激发的碳自由基注入基材的表面，通过反应器组件的收缩区域，然后通过反应器组件的排出部分排出。 当激发的碳自由基与基底接触时，碳自由基在基底上形成一层石墨烯或共轭碳。

公开(公告)号：US20130260539A1

公开(公告)日：2013-10-03

申请号：US13904790

申请日：2013-05-29

Applicant: Synos Technology, Inc.

Inventor： Sang In Lee

IPC: H01L21/02 ,  H01L21/48

CPC classification number: H01L21/02521 ,  C23C16/45551 ,  H01L21/4814

Abstract: A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.

Abstract translation: 气相沉积反应器包括填充有第一材料的腔室和腔室中的至少一个反应模块。 反应模块可以被配置为使得基板通过反应模块通过基板和反应模块之间的相对运动。 反应模块可以包括用于将第二材料注入基底的注射单元。 一种形成薄膜的方法包括将基板定位在室中，填充室中的第一材料，相对于室中的反应模块移动基板，以及在基板通过反应模块时将第二材料注入到基板。

公开(公告)号：US20130260034A1

公开(公告)日：2013-10-03

申请号：US13849477

申请日：2013-03-23

Applicant: SYNOS TECHNOLOGY, INC.

Inventor： Samuel S. Pak ,  Sang In Lee ,  Ilsong Lee ,  Hyo Seok Yang

IPC: C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/4412 ,  C23C16/45551 ,  C23C16/45561 ,  C23C16/45589

Abstract: An injection module assembly (IMA) that moves along a predetermined path to inject gas onto a substrate and discharge excess gas is described. The IMA may be used for processing a substrate that is difficult to move for various reasons such as a large size and weight of the substrate. The IMA is connected to one or more sets of jointed arms with structures to provide one or more paths for injecting the gas or discharging the excess gas. The IMA is moved by a first driving mechanism (e.g., linear motor) and the jointed arms are separately operated by a second driving mechanism (e.g., pulleys and cables) to reduce force or torque caused by the weight of the jointed arms. The movement of the first driving mechanism and the second driving mechanism is synchronized to move the IMA and the jointed arms.

Abstract translation: 描述了沿着预定路径移动以将气体注入基板并排出多余气体的注射模块组件（IMA）。 IMA可以用于处理由于各种原因（例如基板的大尺寸和重量）而难以移动的基板。 IMA连接到具有结构的一组或多组接合臂，以提供用于喷射气体或排出多余气体的一个或多个路径。 IMA由第一驱动机构（例如，线性马达）移动，并且连接的臂由第二驱动机构（例如，滑轮和电缆）分开操作，以减少由连接的臂的重量引起的力或扭矩。 第一驱动机构和第二驱动机构的运动被同步以移动IMA和连接臂。

公开(公告)号：US20130237065A1

公开(公告)日：2013-09-12

申请号：US13773222

申请日：2013-02-21

Applicant: SYNOS TECHNOLOGY, INC.

Inventor： Sang In Lee ,  Ilsong Lee ,  Hyo Seok Yang

IPC: H01L21/02

CPC classification number: H01L21/322 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45591 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/32623 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/0228

Abstract: Placing a conductive member between a plasma chamber in a remote plasma reactor and a substrate to shield the substrate from irradiation of undesirable electromagnetic radiation, ions or electrons. The conductive member blocks the electromagnetic radiation, neutralizes ions and absorbs the electrons. Radicals generated in the plasma chambers flows to the substrate despite the placement of the conductive member. In this way, the substrate is exposed to the radicals whereas damages to the substrate due to electromagnetic radiations, ions or electrons are reduced or removed.

Abstract translation: 将导电构件放置在远程等离子体反应器中的等离子体室和基板之间，以屏蔽基板免受不需要的电磁辐射，离子或电子的照射。 导电构件阻挡电磁辐射，中和离子并吸收电子。 在等离子体室中产生的自由基流过衬底，尽管导电构件的放置。 以这种方式，衬底暴露于自由基，同时减少或去除由电磁辐射，离子或电子引起的对衬底的损伤。