公开(公告)号：US20240355822A1

公开(公告)日：2024-10-24

申请号：US18304393

申请日：2023-04-21

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Che Chi SHIH ,  Tsung-En LEE ,  Wu-Wei TSAI ,  Wei-Yen WOON ,  Szuya LIAO

IPC分类号： H01L27/092 ,  H01L21/02 ,  H01L21/8258 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC分类号： H01L27/0922 ,  H01L21/02565 ,  H01L21/02603 ,  H01L21/8258 ,  H01L29/0673 ,  H01L29/24 ,  H01L29/42392 ,  H01L29/66969 ,  H01L29/775

摘要： A semiconductor device includes a first transistor and a second transistor vertically stacked over the first transistor. The first transistor includes a semiconductor channel layer, a first gate structure wrapping around the semiconductor channel layer, and first source/drain structures on opposite ends of the semiconductor channel layer. The second transistor includes a metal oxide channel layer, a second gate structure wrapping around the metal oxide channel layer, and second source/drain structures on opposite ends of the metal oxide channel layer.