公开(公告)号：US20230274938A1

公开(公告)日：2023-08-31

申请号：US17837848

申请日：2022-06-10

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hao-Ming TANG ,  Shu-Han CHEN ,  Yun-San CHIEN ,  Da-Yuan LEE ,  Chi On CHUI ,  Tsung-Ju CHEN ,  Yi-Hsin TING ,  Han-Shen WANG

IPC分类号： H01L21/28 ,  H01L27/092 ,  H01L29/51 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238

CPC分类号： H01L21/28202 ,  H01L27/0924 ,  H01L29/518 ,  H01L29/7851 ,  H01L29/66795 ,  H01L21/823821 ,  H01L21/823857 ,  H01L21/823878

摘要： In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, an isolation insulating layer is formed such that an upper portion of the fin structure protrudes from the isolation insulating layer, a gate dielectric layer is formed by a deposition process, a nitridation operation is performed on the gate dielectric layer, and a gate electrode layer is formed over the gate dielectric layer. The gate dielectric layer as formed includes silicon oxide, and the nitridation operation comprises a plasma nitridation operation using a N2 gas and a NH3 gas.