公开(公告)号：US20240387379A1

公开(公告)日：2024-11-21

申请号：US18318537

申请日：2023-05-16

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Jun-Nan NIAN ,  Chun-Ju WU ,  Jian-Shin TSAI ,  Yao-Hsiang LIANG ,  Ming-Ching CHUNG

IPC: H01L23/532 ,  H01L21/768

Abstract: Some implementations described herein provide techniques and apparatuses for forming a copper structure adjacent to a multi-layer film structure included in a semiconductor device. The techniques include using an electroplating process to form the copper structure adjacent to the multi-layer film structure, wherein a pre-layer of chlorine molecules coats a seed layer of the multi-layer film structure during the electroplating process. During formation of the copper structure, a chlorine-enriched interface region (e.g., a control layer including a copper chelate material with chlorine) may be formed between the copper structure and the multi-layer film structure including the seed layer. The chlorine-enriched interface region may reduce a likelihood of electromigration and/or stress migration within the semiconductor device.

公开(公告)号：US20230215802A1

公开(公告)日：2023-07-06

申请号：US17745890

申请日：2022-05-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Jun-Nan NIAN ,  Yao-Hsiang LIANG ,  Jian-Shin TSAI ,  Ming-Ching CHUNG ,  Chun-I LIAO

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76885 ,  H01L23/53238 ,  H01L23/53266

Abstract: Embodiments of the present disclosure relate to methods of fabricating conductive features to prevent metal extrusion. Particularly, the conductive feature includes a control layer to reduce grain size of a metal containing layer, thus obtaining a robust structure to decrease extrusion defects. In some embodiments, the control layer is formed between a barrier layer and the conductive feature. In some embodiments, the control layer is formed by adding a control element, such as oxygen, to an upper portion of the barrier layer.

公开(公告)号：US20180337203A1

公开(公告)日：2018-11-22

申请号：US15597521

申请日：2017-05-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Cheng-Yi WU ,  Chun-Chih LIN ,  Jian-Shin TSAI ,  Min-Hui LIN ,  Wen-Shan CHANG ,  Yi-Ming LIN ,  Chao-Ching CHANG ,  C. H. CHEN ,  Chin-Szu LEE ,  Y. T. TSAI

IPC: H01L27/146

Abstract: A method of fabricating an image sensor includes depositing a first dielectric layer over a substrate, removing a portion of the first dielectric layer from the substrate to form a trench, depositing a conductive layer over the first dielectric layer and in the trench, forming a protective layer lining a top surface of the conductive layer and sidewalls and a bottom surface of the groove in the conductive layer, and removing a portion of the conductive layer to form a grid structure. A groove corresponding to the trench is formed in the conductive layer.

公开(公告)号：US20240355870A1

公开(公告)日：2024-10-24

申请号：US18305088

申请日：2023-04-21

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Jun-Nan NIAN ,  Jian-Shin TSAI ,  Yao-Hsiang LIANG ,  Ming-Ching CHUNG ,  Chen-Ying CHUAN

IPC: H01L21/02 ,  H01L23/522

CPC classification number: H01L28/75 ,  H01L23/5223 ,  H01L28/60

Abstract: A buffer layer may be included between a first conductive electrode layer and an insulator layer, and/or between a second conductive electrode layer and the insulator layer of a capacitor structure to reduce lattice mismatching in the capacitor structure. The buffer layer(s) include a combination of materials that promote lattice matching between the insulator layer and one or more of the conductive electrode layers. This reduces the likelihood of formation of structural defects in the capacitor structure relative to another capacitor structure that does not include the buffer layers.

公开(公告)号：US20190088692A1

公开(公告)日：2019-03-21

申请号：US16194778

申请日：2018-11-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Cheng-Yi WU ,  Chun-Chih LIN ,  Jian-Shin TSAI ,  Min-Hui LIN ,  Wen-Shan CHANG ,  Yi-Ming LIN ,  Chao-Ching CHANG ,  C. H. CHEN ,  Chin-Szu LEE ,  Y. T. TSAI

IPC: H01L27/146

Abstract: An image sensor includes a substrate having a first region and a second region. The image sensor further includes a dielectric layer over the substrate. The image sensor further includes a conductive layer over the dielectric layer, wherein in the first region the conductive layer has a grid shape and in the second region a portion of the conductive layer is concave toward the substrate. The image sensor further includes a protective layer, wherein the protective layer is over the conductive layer in the first region, and over a top surface and along sidewalls of the conductive layer in the second region.