公开(公告)号：US20180350946A1

公开(公告)日：2018-12-06

申请号：US15708593

申请日：2017-09-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Shih Wei BIH ,  Chun-Chih LIN ,  Yen-Yu CHEN

IPC: H01L29/66 ,  H01L21/28 ,  H01L21/321 ,  H01L21/326 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78

Abstract: A method of fabricating a semiconductor structure includes depositing a dielectric layer over a gate stack, removing a portion of the gate stack to form a trench in the dielectric layer, depositing an insulating layer in the trench, depositing an adhesion layer over the insulating layer, and performing a hydrogen-containing plasma treatment on the adhesion layer.

公开(公告)号：US20180337203A1

公开(公告)日：2018-11-22

申请号：US15597521

申请日：2017-05-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Cheng-Yi WU ,  Chun-Chih LIN ,  Jian-Shin TSAI ,  Min-Hui LIN ,  Wen-Shan CHANG ,  Yi-Ming LIN ,  Chao-Ching CHANG ,  C. H. CHEN ,  Chin-Szu LEE ,  Y. T. TSAI

IPC: H01L27/146

Abstract: A method of fabricating an image sensor includes depositing a first dielectric layer over a substrate, removing a portion of the first dielectric layer from the substrate to form a trench, depositing a conductive layer over the first dielectric layer and in the trench, forming a protective layer lining a top surface of the conductive layer and sidewalls and a bottom surface of the groove in the conductive layer, and removing a portion of the conductive layer to form a grid structure. A groove corresponding to the trench is formed in the conductive layer.

公开(公告)号：US20240145561A1

公开(公告)日：2024-05-02

申请号：US18409119

申请日：2024-01-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Ting TSAI ,  Chung-Liang CHENG ,  Hong-Ming LO ,  Chun-Chih LIN ,  Chyi-Tsong NI

IPC: H01L29/417 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49

CPC classification number: H01L29/41775 ,  H01L29/401 ,  H01L29/41733 ,  H01L29/4236 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908

Abstract: A semiconductor may include an active region, an epitaxial source/drain formed in and extending above the active region, and a first dielectric layer formed over a portion of the active region. The semiconductor may include a first metal gate and a second metal gate formed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer and the second metal gate, and a titanium layer, without an intervening fluorine residual layer, formed on the metal gate and the epitaxial source/drain. The semiconductor may include a first metal layer formed on top of the titanium on the first metal gate, a second metal layer formed on top of the titanium layer on the epitaxial source/drain, and a third dielectric layer formed on the second dielectric layer. The semiconductor may include first and second vias formed in the third dielectric layer.

公开(公告)号：US20210035829A1

公开(公告)日：2021-02-04

申请号：US17074105

申请日：2020-10-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ping-Tse LIN ,  Chun-Chih LIN ,  Wen-Cheng LIEN ,  Monica HO

IPC: H01L21/67 ,  G01B11/14 ,  G01N21/84 ,  H01L21/268 ,  H01L21/324 ,  F16P1/06 ,  G01B11/06

Abstract: A multi-shield plate includes a plate having a substantially flat upper surface and a substantially flat lower surface, a plurality of first windows formed in the plate and extending through the plate from the upper surface to the lower surface, and a plurality of vapor shields mounted to the plate, each vapor shield of the plurality of vapor shields configured to prevent passage of a vapor through a corresponding window of the plurality of windows. The multi-shield plate includes an aperture formed in the plate, the aperture aligned with a first window of the plurality of windows along an axis corresponding to the upper surface.

公开(公告)号：US20190035653A1

公开(公告)日：2019-01-31

申请号：US15694161

申请日：2017-09-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hsien-Chang HSIEH ,  Chun-Chih LIN ,  Tah-te SHIH ,  Wen-Hsong WU ,  Chune-Te YANG ,  Yu-Jen SU

IPC: H01L21/67 ,  F27D17/00 ,  F23J13/02

CPC classification number: H01L21/67109 ,  F23J13/02 ,  F23J2900/13001 ,  F27D17/002 ,  H01L21/67017 ,  H01L21/67103

Abstract: An exhaust structure includes an intake section including a first high thermal conductivity material, the intake section having an inlet, an output section including a second high thermal conductivity material, the output section having an outlet, and a piping section including a third high thermal conductivity material, the piping section being configured to communicatively couple the intake section with the output section. The exhaust structure provides a high thermal conductivity path from the inlet to the outlet, the high thermal conductivity path including the first high thermal conductivity material, the second high thermal conductivity material, and the third high thermal conductivity material.

公开(公告)号：US20230013102A1

公开(公告)日：2023-01-19

申请号：US17736076

申请日：2022-05-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hung-Chih WANG ,  Hsin-Jung CHANG ,  Chun-Chih LIN ,  Su-Yu YEH

IPC: H01L23/522 ,  H01L21/768

Abstract: Methods of forming a semiconductor device structure are described. The method includes forming a first conductive feature including a conductive fill material over a substrate, forming an etch stop layer on the conductive fill material, forming an intermetallization dielectric on the etch stop layer, forming an opening in the etch stop layer and the intermetallization dielectric to expose a portion of the conductive fill material, forming a recess in the exposed portion of the conductive fill material, and the opening and the recess together form a rivet-shaped space. The method further includes forming a second conductive feature in the rivet-shaped space and forming a metal nitride layer over the intermetallization dielectric and the second conductive feature. The forming the metal nitride layer includes depositing the metal nitride layer and treating the metal nitride layer with a plasma treatment process.

公开(公告)号：US20200098892A1

公开(公告)日：2020-03-26

申请号：US16695006

申请日：2019-11-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Shih Wei BIH ,  Chun-Chih LIN ,  Yen-Yu CHEN

IPC: H01L29/66 ,  H01L21/28 ,  H01L21/321 ,  H01L21/326 ,  H01L29/49 ,  H01L29/78 ,  H01L29/423

Abstract: A gate structure includes a gate dielectric layer over a semiconductor workpiece. The gate structure further includes a work function layer over the gate dielectric layer, wherein the work function layer has a U-shape profile. The gate structure further includes an adhesion layer over the work function layer, wherein a surface of the adhesion layer farthest from the work function layer is substantially free of oxygen atoms. The gate structure further includes a conductive layer over the adhesion layer, wherein the conductive layer has an I-shape profile.

公开(公告)号：US20180350640A1

公开(公告)日：2018-12-06

申请号：US15798827

申请日：2017-10-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ping-Tse LIN ,  Chun-Chih LIN ,  Wen-Cheng LIEN ,  Monica HO

IPC: H01L21/67 ,  G01B11/14 ,  G01N21/84 ,  F16P1/06 ,  H01L21/268 ,  H01L21/324

CPC classification number: H01L21/67115 ,  F16P1/06 ,  G01B11/0633 ,  G01B11/14 ,  G01N21/8422 ,  G01N2021/8427 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67248 ,  H01L21/67253

Abstract: A multi-shield plate includes a plate having a substantially flat upper surface and a substantially flat lower surface, a plurality of first windows formed in the plate and extending through the plate from the upper surface to the lower surface, and a plurality of vapor shields mounted to the plate, each vapor shield of the plurality of vapor shields configured to prevent passage of a vapor through a corresponding window of the plurality of windows. The multi-shield plate includes an aperture formed in the plate, the aperture aligned with a first window of the plurality of windows along an axis corresponding to the upper surface.

公开(公告)号：US20240359194A1

公开(公告)日：2024-10-31

申请号：US18769077

申请日：2024-07-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Channing CHAN ,  Kuo-Shu TSENG ,  Chun-Chih LIN

IPC: B05B1/18 ,  B05B1/30 ,  B05B13/04 ,  B08B3/02 ,  B08B3/08 ,  B08B3/10 ,  H01L21/67

CPC classification number: B05B1/185 ,  B05B1/30 ,  B05B13/0431 ,  B08B3/024 ,  B08B3/08 ,  H01L21/67023 ,  H01L21/67051 ,  H01L21/6708 ,  B08B3/10

Abstract: A system for dispensing a liquid includes a conduit, the conduit being configured to convey the liquid; a dispensing tip fluidically coupled to the conduit; and a movable arm, the movable arm being configured to change a position of the dispensing tip relative to a workpiece to which the liquid is dispensed. The dispensing tip includes a first section having a liquid-containing wall and a septum, the septum divides the first section into at least a first liquid passage and a second liquid passage, and the septum is disposed to contact the liquid in each of the at least first liquid passage and second liquid passage during dispensing of the liquid to the workpiece.

公开(公告)号：US20230264208A1

公开(公告)日：2023-08-24

申请号：US18308157

申请日：2023-04-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Channing CHAN ,  Kuo-Shu TSENG ,  Chun-Chih LIN

IPC: B05B1/18 ,  H01L21/67 ,  B05B1/30 ,  B08B3/02 ,  B05B13/04 ,  B08B3/08

CPC classification number: B05B1/185 ,  H01L21/67023 ,  B05B1/30 ,  B08B3/024 ,  B05B13/0431 ,  B08B3/08 ,  H01L21/6708 ,  H01L21/67051 ,  B08B3/10

Abstract: A nozzle assembly for use in liquid-dispensing system, the nozzle assembly includes a pipe having lumens; a body, an end of the pipe being mounted to the body; the pipe having a wall and a septum, the wall enclosing a space, the septum dividing the space enclosed by the wall into the lumens; each of the lumens being correspondingly terminated in an orifice such that a liquid is escapable from each lumen through the corresponding orifice and is thereby dispensable from the nozzle assembly.