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公开(公告)号：US20240260479A1
公开(公告)日：2024-08-01
申请号：US18631813
申请日：2024-04-10
Inventor： Yu-Jen CHIEN , Jung-Tang WU , Szu-Hua WU , Chin-Szu LEE , Meng-Yu WU
Abstract: A method of manufacturing a semiconductor device includes: forming a substrate over the substrate, the substrate defining a logic region and a memory region; depositing a bottom electrode layer across the logic region and the memory region; depositing a magnetic tunnel junction (MTJ) layer over the bottom electrode layer; depositing a first conductive layer over the MTJ layer; depositing a sacrificial layer over the first conductive layer; etching the sacrificial layer in the memory region to expose the first conductive layer in the memory region while keeping the first conductive layer in the logic region covered; depositing a second conductive layer in the memory region and the logic region; patterning the second conductive layer to expose the MTJ layer in the memory region; and etching the patterned second conductive layer and the MTJ layer to form a top electrode and an MTJ, respectively, in the memory region.
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公开(公告)号：US20230066036A1
公开(公告)日：2023-03-02
申请号：US17461554
申请日：2021-08-30
Inventor： I-Pin CHIN , Yu-Jen CHIEN , Chin-Szu LEE
IPC: H01L27/22 , C23C16/455 , H01L21/67 , G11C11/16
Abstract: A method of forming a memory device includes forming a dielectric structure over a wafer. A bottom electrode via is formed in the dielectric structure. A plasma deposition process is performed to deposit a bottom electrode layer over the bottom electrode via and performing the plasma deposition process includes off-axis rotating a magnet over the wafer to control plasma of the plasma deposition process. A memory material layer and a top electrode layer are formed over the bottom electrode layer. The bottom electrode layer, the memory material layer, and the top electrode layer are patterned to respectively form a bottom electrode, a memory layer, and a top electrode.
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公开(公告)号：US20190088692A1
公开(公告)日：2019-03-21
申请号：US16194778
申请日：2018-11-19
Inventor： Cheng-Yi WU , Chun-Chih LIN , Jian-Shin TSAI , Min-Hui LIN , Wen-Shan CHANG , Yi-Ming LIN , Chao-Ching CHANG , C. H. CHEN , Chin-Szu LEE , Y. T. TSAI
IPC: H01L27/146
Abstract: An image sensor includes a substrate having a first region and a second region. The image sensor further includes a dielectric layer over the substrate. The image sensor further includes a conductive layer over the dielectric layer, wherein in the first region the conductive layer has a grid shape and in the second region a portion of the conductive layer is concave toward the substrate. The image sensor further includes a protective layer, wherein the protective layer is over the conductive layer in the first region, and over a top surface and along sidewalls of the conductive layer in the second region.
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公开(公告)号：US20250137114A1
公开(公告)日：2025-05-01
申请号：US19010611
申请日：2025-01-06
Inventor： Yi-Lin WANG , Chin-Szu LEE , Hua-Sheng CHIU , Yi-Chao CHANG , Zih-Shou MUE
Abstract: Some implementations described herein provide a shutter disc for use during a conditioning process within a processing chamber of a deposition tool. The shutter disc described herein includes a material having a wave-shaped section to reduce heat transfer to the shutter disc and to provide relief from thermal stresses. Furthermore, the shutter disc includes a deposition of a thin-film material on a backside of the shutter disc, where a diameter of the shutter disc causes a spacing between an inner edge of the thin-film material and an outer edge of a substrate support component. The spacing prevents an accumulation of material between the thin film material and the substrate support component, reduces tilting of the shutter disc due to a placement error, and reduces heat transfer to the shutter disc.
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公开(公告)号：US20230386809A1
公开(公告)日：2023-11-30
申请号：US18447557
申请日：2023-08-10
Inventor： Chia-Hung TSAI , Chin-Szu LEE , Szu-Hua WU , Jui-Hung HO , Chi-Hung LIAO , Yu-Jen CHIEN
IPC: H01J37/34 , H01L21/285 , H01L21/768 , C23C14/35 , H05K9/00 , C23C14/54
CPC classification number: H01J37/3488 , H01L21/2855 , H01L21/76879 , C23C14/35 , H01L23/53238 , H01J37/3452 , H01J37/3476 , H05K9/0088 , C23C14/54 , H01J37/3447
Abstract: A magnetic shield reduces external noise in a chamber including a target and at least one electromagnet for copper physical vapor deposition (PVD). The shield may have a thickness in a range from approximately 0.1 mm to approximately 10 mm to provide sufficient protection from radio frequency and other electromagnetic signals. As a result, copper atoms in the chamber undergo less re-direction from external noise. Additionally, even when hardware failure occurs during PVD (e.g., an electromagnet malfunctions, a wafer stage is not level, and/or a flow optimizer induces too much shift, among other examples), the copper atoms are less susceptible to small re-directions from external noise. As a result, back end of line (BEOL) and/or middle end of line (MEOL) conductive structures are formed in a more uniform manner, which increases conductivity and improves lifetime of an electronic device including the BEOL and/or MEOL conductive structures.
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Patent Agency Ranking
公开(公告)号：US20240335957A1
公开(公告)日：2024-10-10
申请号：US18131064
申请日：2023-04-05
Inventor： Ching Hsien LIU , Sheng-Po TSENG , Chen Liang CHANG , Chin-Szu LEE , Yi Chen HO
CPC classification number: B25J15/0616 , B65G47/91
Abstract: Embodiments of the present disclosure provide die pick and place tools with an improved vacuum tip that can perform attachment and detachment of an integrated circuit die without deforming dies. In one embodiment, a vacuum tip for transporting an integrated circuit die is provided. The vacuum tip includes a body having a top surface and a bottom surface, a plurality of grooves formed in the top surface and into the body, wherein the grooves extend radially outward from a center point of the body. The vacuum tip also includes a channel in the body, wherein the channel extends from a bottom of the grooves through the body to the bottom surface of the body, and the channel and the body are substantially co-axial.
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公开(公告)号：US20230360944A1
公开(公告)日：2023-11-09
申请号：US17661838
申请日：2022-05-03
Inventor： Hsuan-Ying PENG , Chin-Szu LEE , Chiang Hsien SHIH , Chih-Chang WU , Che-Wei TUNG
IPC: H01L21/68 , H01L21/687 , G05B19/418
CPC classification number: H01L21/68 , H01L21/68764 , G05B19/418 , H01L21/76846
Abstract: Some implementations described herein provide a deposition tool that includes a grounding component between an edge ring of a substrate stage and a pumping plate component. The grounding component includes a grounding strap having a deformation region. The deformation region includes a recessed edge to reduce a likelihood of the grounding strap rubbing against a surface of the pumping plate component during operation of the deposition tool. Material properties of the grounding strap may reduce a likelihood of plastic deformation of the grounding strap during repeated cycling. In this way, an amount of particulates dislodged from the surface of the pumping plate component may be decreased to improve a yield of semiconductor product fabricated using the deposition tool. Furthermore, a frequency of servicing the grounding component may be decreased to decrease a downtime of the deposition tool and increase a throughput of semiconductor product fabricated using the deposition tool.
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公开(公告)号：US20240384405A1
公开(公告)日：2024-11-21
申请号：US18786836
申请日：2024-07-29
Inventor： Chi-Wen CHIU , Chih-Chang WU , Che-Wei TUNG , Chiang Hsien SHIH , Chin-Szu LEE
IPC: C23C16/448
Abstract: A system and method for reducing thermal transfer in a dual ampoule system. The dual ampoule system includes a first ampoule, a second ampoule, and a planar heat shield. The planar heat shield is positioned between the first ampoule and the second ampoule, where the planar heat shield is configured to resist thermal transfer between the first ampoule and the second ampoule.
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公开(公告)号：US20230383397A1
公开(公告)日：2023-11-30
申请号：US18447543
申请日：2023-08-10
Inventor： Yi-Lin WANG , Chin-Szu LEE , Hua-Sheng CHIU , Yi-Chao CHANG , Zih-Shou MUE
CPC classification number: C23C14/34 , H01J37/32724 , H01J37/32853 , B08B17/04 , C23C14/50 , B08B7/0035 , H01J37/32082 , H01J2237/332
Abstract: Some implementations described herein provide a shutter disc for use during a conditioning process within a processing chamber of a deposition tool. The shutter disc described herein includes a material having a wave-shaped section to reduce heat transfer to the shutter disc and to provide relief from thermal stresses. Furthermore, the shutter disc includes a deposition of a thin-film material on a backside of the shutter disc, where a diameter of the shutter disc causes a spacing between an inner edge of the thin-film material and an outer edge of a substrate support component. The spacing prevents an accumulation of material between the thin film material and the substrate support component, reduces tilting of the shutter disc due to a placement error, and reduces heat transfer to the shutter disc.
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公开(公告)号：US20230023914A1
公开(公告)日：2023-01-26
申请号：US17662107
申请日：2022-05-05
Inventor： Yi-Lin WANG , Chin-Szu LEE , Hua-Sheng CHIU , Yi-Chao CHANG , Zih-Shou MUE
Abstract: Some implementations described herein provide a shutter disc for use during a conditioning process within a processing chamber of a deposition tool. The shutter disc described herein includes a material having a wave-shaped section to reduce heat transfer to the shutter disc and to provide relief from thermal stresses. Furthermore, the shutter disc includes a deposition of a thin-film material on a backside of the shutter disc, where a diameter of the shutter disc causes a spacing between an inner edge of the thin-film material and an outer edge of a substrate support component. The spacing prevents an accumulation of material between the thin film material and the substrate support component, reduces tilting of the shutter disc due to a placement error, and reduces heat transfer to the shutter disc.
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