公开(公告)号：US20240355671A1

公开(公告)日：2024-10-24

申请号：US18758180

申请日：2024-06-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： LIN-YU HUANG ,  LI-ZHEN YU ,  CHIA-HAO CHANG ,  CHENG-CHI CHUANG ,  CHIH-HAO WANG ,  KUAN-LUN CHENG

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/7682 ,  H01L23/5329 ,  H01L21/76807 ,  H01L23/53238

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a conductive structure disposed over the device, and the conductive structure includes a sidewall having a first portion and a second portion. The semiconductor device structure further includes a first spacer layer including a third portion and a fourth portion, the third portion surrounds the first portion of the sidewall, and the fourth portion is disposed on the conductive structure. The semiconductor device structure further includes a first dielectric material surrounding the third portion, and an air gap is formed between the first dielectric material and the third portion of the first spacer layer. The first dielectric material includes a first material different than a second material of the first spacer layer, and the first dielectric material is substantially coplanar with the fourth portion of the first spacer layer.

公开(公告)号：US20220375850A1

公开(公告)日：2022-11-24

申请号：US17874886

申请日：2022-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： LIN-YU HUANG ,  LI-ZHEN YU ,  CHIA-HAO CHANG ,  CHENG-CHI CHUANG ,  KUAN-LUN CHENG ,  CHIH-HAO WANG

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a first dielectric material disposed over the device, and an opening is formed in the first dielectric material. The semiconductor device structure further includes a conductive structure disposed in the opening, and the conductive structure includes a first sidewall. The semiconductor device structure further includes a surrounding structure disposed in the opening, and the surrounding structure surrounds the first sidewall of the conductive structure. The surrounding structure includes a first spacer layer and a second spacer layer adjacent the first spacer layer. The first spacer layer is separated from the second spacer layer by an air gap.

公开(公告)号：US20240234410A1

公开(公告)日：2024-07-11

申请号：US18152146

申请日：2023-01-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： SHENG-FU HSU ,  CHEN-YI LEE ,  LIN-YU HUANG ,  SHIH-FAN CHEN

IPC: H01L27/02 ,  H01L27/092

CPC classification number: H01L27/0266 ,  H01L27/092

Abstract: A semiconductor ESD protection device includes a pair of source regions, a pair of gate structures, a drain region, a plurality of first conductive contacts, a plurality of second conductive contacts, a plurality of third conductive contacts, and a dummy structure. The pair of gate structures are disposed between the pair of source regions and extend along a direction. The drain region is disposed between the pair of gate structures. Each of the first conductive contacts is disposed on one of the pair of source regions and is arranged along the direction. Each of the plurality of second conductive contacts is disposed on one of the pair of gate structures. The plurality of third conductive contacts are disposed on the drain region and arranged along the direction. The dummy structure is disposed over the drain region and between the gate structures and between the third conductive contacts.

公开(公告)号：US20220359267A1

公开(公告)日：2022-11-10

申请号：US17874639

申请日：2022-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： LIN-YU HUANG ,  LI-ZHEN YU ,  CHIA-HAO CHANG ,  CHENG-CHI CHUANG ,  KUAN-LUN CHENG ,  CHIH-HAO WANG

IPC: H01L21/768 ,  H01L23/532

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a conductive structure disposed over the device, and the conductive structure includes a sidewall having a first portion and a second portion. The semiconductor device structure further includes a first spacer layer including a third portion and a fourth portion, the third portion surrounds the first portion of the sidewall, and the fourth portion is disposed on the conductive structure. The semiconductor device structure further includes a first dielectric material surrounding the third portion, and an air gap is formed between the first dielectric material and the third portion of the first spacer layer. The first dielectric material includes a first material different than a second material of the first spacer layer, and the first dielectric material is substantially coplanar with the fourth portion of the first spacer layer.