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公开(公告)号：US20240185895A1
公开(公告)日：2024-06-06
申请号：US18439982
申请日：2024-02-13
摘要： A system includes a high bandwidth memory (HBM) arranged into portions including memory cells, the HBM further including a differentiated dynamic voltage and frequency scaling (DDVFS) device to perform the following: for a first set of one or more of the memory cells in a first one of the portions, the first set including a first one of the memory cells, controlling a temperature of the first set based on one or more first environmental signals corresponding to at least a first transistor in the first memory cell; and for a second set of one or more of the memory cells in a second one of the portions, the second set including a second one of memory cells, controlling a temperature of the second set based on one or more second environmental signals corresponding to at least a second transistor in the second memory cell.
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公开(公告)号：US20230010537A1
公开(公告)日：2023-01-12
申请号：US17680044
申请日：2022-02-24
摘要： A system includes: a high bandwidth memory (HBM) including a first sensing unit configured to generate one or more first environmental signals corresponding to a first transistor in a first memory cell, and a second sensing unit configured to generate one or more second environmental signals corresponding to a second transistor in a second memory cell; and a differentiated dynamic voltage and frequency scaling (DDVFS) device configured to perform the following (1) for a first set of the memory cells which includes the first memory cell, controlling temperature by adjusting one or more first transistor-temperature-affecting (TTA) parameters of the first set based on the one or more first environmental signals, and (2) for a second set of the memory cells which includes the second memory cell, controlling temperature by adjusting one or more second TTA parameters of the second set based on the one or more second environmental signals.
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