公开(公告)号：US20230268386A1

公开(公告)日：2023-08-24

申请号：US17678481

申请日：2022-02-23

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Han-Yu LIN ,  Che-Chi SHIH ,  Szu-Hua CHEN ,  Kuan-Da HUANG ,  Cheng-Ming LIN ,  Tze-Chung LIN ,  Li-Te LIN ,  Wei-Yen WOON ,  Pinyen LIN

IPC分类号： H01L29/06 ,  H01L29/786 ,  H01L29/66 ,  H01L21/8234

CPC分类号： H01L29/0653 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823481 ,  H01L29/0665 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/78618 ,  H01L29/78696

摘要： A device includes a first semiconductor structure, a second semiconductor structure, and an isolation structure which is disposed between the first and second semiconductor structures, and which includes a dielectric material having a dielectric constant higher than 8 and lower than 16. A method for manufacturing the device is also disclosed.

公开(公告)号：US20240047523A1

公开(公告)日：2024-02-08

申请号：US17880883

申请日：2022-08-04

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Cheng-Ming LIN ,  Szu-Hua CHEN ,  Wei-Yen WOON ,  Szuya LIAO

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L21/285 ,  H01L29/51

CPC分类号： H01L29/0673 ,  H01L29/6656 ,  H01L29/0649 ,  H01L21/28556 ,  H01L29/517

摘要： A method for forming a semiconductor device structure is provided. The method includes forming a gate stack over a substrate. The method includes forming a spacer over first sidewalls of the gate stack using a first precursor. The first precursor includes a first boron- and nitrogen-containing material having a first hexagonal ring structure, the spacer has a plurality of first layers, and each first layer includes boron and nitrogen.