公开(公告)号：US20240332018A1

公开(公告)日：2024-10-03

申请号：US18738526

申请日：2024-06-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih Yung HUNG ,  Wei-Jen LO ,  Cheng-Han LEE ,  Ching-Lun LAI ,  Chien-Feng LIN ,  Shahaji B. MORE ,  Shih-Chieh CHANG

IPC: H01L21/02 ,  C30B25/10 ,  C30B25/12 ,  C30B25/16 ,  H01L21/268 ,  H01L21/66 ,  H01L21/687

CPC classification number: H01L21/02636 ,  C30B25/105 ,  C30B25/12 ,  C30B25/16 ,  H01L21/268 ,  H01L21/68764 ,  H01L22/20

Abstract: The present disclosure provides a semiconductor processing apparatus according to one embodiment. The semiconductor processing apparatus includes a chamber; a base station located in the chamber for supporting a semiconductor substrate; a preheating assembly surrounding the base station; a first heating element fixed relative to the base station and configured to direct heat to the semiconductor substrate; and a second heating element moveable relative to the base station and operable to direct heat to a portion of the semiconductor substrate.

公开(公告)号：US20220130706A1

公开(公告)日：2022-04-28

申请号：US17572351

申请日：2022-01-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Yu-Chi LIN ,  Huai-Tei YANG ,  Lun-Kuang TAN ,  Wei-Jen LO ,  Chih-Teng LIAO

IPC: H01L21/683 ,  H01L21/3065 ,  H01J37/32

Abstract: A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.

公开(公告)号：US20240355663A1

公开(公告)日：2024-10-24

申请号：US18758212

申请日：2024-06-28

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Chi LIN ,  Huai-Tei YANG ,  Lun-Kuang TAN ,  Wei-Jen LO ,  Chih-Teng LIAO

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/6833 ,  H01J37/32082 ,  H01J37/32743 ,  H01L21/3065 ,  H01J2237/0225 ,  H01J2237/182

Abstract: A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.