公开(公告)号：US11772058B2

公开(公告)日：2023-10-03

申请号：US16657016

申请日：2019-10-18

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

发明人： Ming Shing Lin ,  Chin Shen Hsieh

IPC分类号： C23C16/40 ,  B01F25/23 ,  C23C16/455 ,  H01L21/67 ,  B01F23/10 ,  B01F35/91 ,  B01F35/10 ,  B01F35/90 ,  B01F101/58

CPC分类号： B01F25/23 ,  B01F23/19 ,  B01F35/1453 ,  B01F35/91 ,  C23C16/45565 ,  H01L21/67017 ,  B01F2035/98 ,  B01F2101/58

摘要： A gas mixing system for semiconductor fabrication includes a mixing block. The mixing block defines a gas mixing chamber, a first gas channel fluidly coupled to the gas mixing chamber at a first exit location, and a second gas channel fluidly coupled to the gas mixing chamber at a second exit location, wherein the first exit location is diametrically opposite the second exit location relative to the gas mixing chamber and the second gas channel has a bend of 90 degrees or less between an entrance of the second gas channel and the second exit location.