公开(公告)号：US20160111536A1

公开(公告)日：2016-04-21

申请号：US14515225

申请日：2014-10-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： I-CHIH CHEN ,  CHIH-MING HSIEH ,  FU-TSUN TSAI ,  YUNG-FA LEE ,  CHIH-MU HUANG

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/324 ,  H01L29/66

CPC classification number: H01L29/66795 ,  H01L21/265 ,  H01L21/324 ,  H01L29/7848 ,  H01L29/785

Abstract: Some embodiments of the present disclosure provide a method of manufacturing a semiconductor device including receiving a FinFET precursor including a fin structure formed between isolation regions, and a gate structure formed over a portion of the fin structure such that a sidewall of the fin structure is in contact with a gate spacer of the gate structure; patterning the fin structure to comprise a pattern of at least one upward step rising from the isolation region; forming a capping layer over the fin structure, the isolation region, and the gate structure; performing an annealing process on the FinFET precursor to form at least two dislocations along the upward step; and removing the capping layer.

Abstract translation: 本公开的一些实施例提供一种制造半导体器件的方法，该半导体器件包括接收包括形成在隔离区域之间的鳍结构的FinFET前体，以及形成在鳍结构的一部分上的栅极结构，使得翅片结构的侧壁处于 与栅极结构的栅极间隔物接触; 图案化鳍结构以包括从隔离区域上升的至少一个向上步骤的图案; 在鳍结构，隔离区和栅结构之上形成覆盖层; 对FinFET前体进行退火处理以沿着向上的台阶形成至少两个位错; 并去除覆盖层。

公开(公告)号：US20160380085A1

公开(公告)日：2016-12-29

申请号：US15260986

申请日：2016-09-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： I-CHIH CHEN ,  CHIH-MING HSIEH ,  FU-TSUN TSAI ,  YUNG-FA LEE ,  CHIH-MU HUANG

IPC: H01L29/66 ,  H01L21/324 ,  H01L21/265 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/265 ,  H01L21/324 ,  H01L29/7848 ,  H01L29/785

Abstract: A method of manufacturing a semiconductor device includes receiving a FinFET precursor including a fin structure formed between some isolation regions, and a gate structure formed over a portion of the fin structure; removing a top portion of the fin structure on either side of the gate structure; growing a semiconductive layer on top of a remaining portion of the fin structure such that a plurality of corners is formed over the fin structure; forming a capping layer over the semiconductive layer; performing an annealing process on the FinFET precursor to form a plurality of dislocations proximate to the corners; and removing the capping layer.

Abstract translation: 制造半导体器件的方法包括：接收FinFET前体，其包括在一些隔离区之间形成的鳍结构，以及形成在所述鳍结构的一部分上的栅极结构; 去除栅极结构两侧的翅片结构的顶部; 在翅片结构的剩余部分的顶部上生长半导体层，使得在翅片结构上方形成多个角部; 在所述半导体层上形成覆盖层; 对FinFET前体进行退火处理以形成靠近角部的多个位错; 并去除覆盖层。