公开(公告)号：US10002829B2

公开(公告)日：2018-06-19

申请号：US14954207

申请日：2015-11-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Hao Chen ,  Chen-Hsiang Hsu ,  Hung-Chih Lin ,  Ching-Nen Peng ,  Mill-Jer Wang

IPC分类号： H01L23/528 ,  G01R19/00 ,  G01R31/28 ,  H01L23/31 ,  H01L23/00 ,  H01L25/065 ,  H01L23/498

CPC分类号： H01L23/528 ,  G01R19/0092 ,  G01R31/2831 ,  G01R31/2884 ,  G01R31/2896 ,  H01L22/32 ,  H01L23/3107 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/09 ,  H01L24/14 ,  H01L24/17 ,  H01L25/0655 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/24137 ,  H01L2924/18162 ,  H01L2924/2064

摘要： A semiconductor device is provided which comprises a semiconductive substrate and an interconnect on the substrate. The interconnect comprises a dielectric in an upper most level of the interconnect and a plurality of conductive pads where each of the plurality of conductive pads is at least partially exposed from the dielectric. The interconnect further includes a current sensor electrically coupled with at least one of the plurality of conductive pads.