公开(公告)号：US20160005781A1

公开(公告)日：2016-01-07

申请号：US14322469

申请日：2014-07-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： HUAN-EN LIN ,  SHIU-KO JANGJIAN ,  VOLUME CHIEN ,  FU-TSUN TSAI ,  YUNG-LUNG HSU ,  CHI-CHERNG JENG

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689

Abstract: A backside illuminated (BSI) image sensor device includes: a first substrate including a front side and a back side; a second substrate bonded with the first substrate on the front side; and a blocking layer between the first substrate and the second substrate. The first substrate includes an image sensor, and the image sensor is configured to collect incident light entering from the back side. The second substrate includes a circuit coupled with the image sensor. The blocking layer is configured to block radiation induced by the circuit.

Abstract translation: 背面照明（BSI）图像传感器装置包括：第一基板，包括前侧和后侧; 在前侧与第一基板结合的第二基板; 以及在第一基板和第二基板之间的阻挡层。 第一基板包括图像传感器，并且图像传感器被配置为收集从背面进入的入射光。 第二基板包括与图像传感器耦合的电路。 阻挡层被配置为阻挡由电路引起的辐射。