-
公开(公告)号：US20160013118A1
公开(公告)日：2016-01-14
申请号：US14331046
申请日：2014-07-14
Inventor： TSUNG-HAN TSAI , VOLUME CHIEN , YUNG-LUNG HSU , CHUNG-BIN TSENG , KENG-YING LIAO , PO-ZEN CHEN
IPC: H01L23/48 , H01L27/06 , H01L21/768
CPC classification number: H01L23/481 , H01L21/76805 , H01L21/76831 , H01L21/76832 , H01L21/76898 , H01L27/0688 , H01L27/14634 , H01L2224/24147 , H01L2224/8203 , H01L2924/0002 , H01L2924/00
Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 μm to about 0.2 μm.
Abstract translation: 本公开提供了一种半导体结构。 该结构包括第一基板; 第一介电层，其具有靠近第一基板的第一表面和远离第一基板的第二表面; 穿过第一介电层的第一表面的第一互连; 以及沿第一互连的侧壁的一部分延伸的保护层。 保护层的厚度在约0.02μm至约0.2μm的范围内。
-
公开(公告)号：US20180082928A1
公开(公告)日：2018-03-22
申请号：US15823297
申请日：2017-11-27
Inventor： TSUNG-HAN TSAI , VOLUME CHIEN , YUNG-LUNG HSU , CHUNG-BIN TSENG , KENG-YING LIAO , PO-ZEN CHEN
IPC: H01L23/48 , H01L21/768 , H01L27/146 , H01L27/06
CPC classification number: H01L23/481 , H01L21/76805 , H01L21/76831 , H01L21/76832 , H01L21/76898 , H01L27/0688 , H01L27/14634 , H01L2224/24147 , H01L2224/8203 , H01L2924/0002 , H01L2924/00
Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 μm to about 0.2 μm.
-
公开(公告)号：US20160307950A1
公开(公告)日：2016-10-20
申请号：US14689968
申请日：2015-04-17
Inventor： ZEN-FONG HUANG , VOLUME CHIEN , SU-HUA CHANG
IPC: H01L27/146
CPC classification number: H01L27/14621 , H01L27/14625 , H01L27/14629 , H01L27/1464 , H01L27/14645 , H01L27/14649 , H01L27/14685
Abstract: A semiconductor structure includes a substrate including a first side and a second side disposed opposite to the first side and configured to receive an electromagnetic radiation, a barrier layer disposed over the second side of the substrate, a color filter disposed over the barrier layer, and a grid surrounding the color filter and disposed over the barrier layer, wherein the barrier layer is configured to absorb or reflect non-visible light in the electromagnetic radiation, and the barrier layer is disposed between the grid and the substrate.
Abstract translation: 半导体结构包括：基板，包括第一侧和与第一侧相对设置并被配置为接收电磁辐射的第二侧;布置在基板的第二侧上的阻挡层;设置在阻挡层上的滤色器;以及 围绕所述滤色器并布置在所述阻挡层上的栅格，其中所述阻挡层被配置为吸收或反射所述电磁辐射中的不可见光，并且所述阻挡层设置在所述栅格和所述衬底之间。
-
公开(公告)号：US20190252295A1
公开(公告)日：2019-08-15
申请号：US16389762
申请日：2019-04-19
Inventor： TSUNG-HAN TSAI , VOLUME CHIEN , YUNG-LUNG HSU , CHUNG-BIN TSENG , KENG-YING LIAO , PO-ZEN CHEN
IPC: H01L23/48 , H01L21/768
CPC classification number: H01L23/481 , H01L21/76805 , H01L21/76831 , H01L21/76832 , H01L21/76898 , H01L27/0688 , H01L27/14634 , H01L2224/24147 , H01L2224/8203 , H01L2924/0002 , H01L2924/00
Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 μm to about 0.2 μm.
-
Patent Agency Ranking
公开(公告)号：US20180082927A1
公开(公告)日：2018-03-22
申请号：US15815392
申请日：2017-11-16
Inventor： TSUNG-HAN TSAI , VOLUME CHIEN , YUNG-LUNG HSU , CHUNG-BIN TSENG , KENG-YING LIAO , PO-ZEN CHEN
IPC: H01L23/48 , H01L21/768 , H01L27/146 , H01L27/06
CPC classification number: H01L23/481 , H01L21/76805 , H01L21/76831 , H01L21/76832 , H01L21/76898 , H01L27/0688 , H01L27/14634 , H01L2224/24147 , H01L2224/8203 , H01L2924/0002 , H01L2924/00
Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 μm to about 0.2 μm.
-
公开(公告)号：US20140225215A1
公开(公告)日：2014-08-14
申请号：US13763355
申请日：2013-02-08
Inventor： VOLUME CHIEN , Chen I-Chih , Ying-Lang Wang , Chen Hsin-Chi , Chen Ying-Hao , Huang-Ta Huang
CPC classification number: H01L27/14636 , H01L21/764 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/14 , H01L27/1464 , H01L27/14643 , H01L27/14683 , H01L2224/0401 , H01L2224/05075 , H01L2224/05624 , H01L2224/05647 , H01L2224/08054 , H01L2224/13014 , H01L2224/13016 , H01L2224/48463 , H01L2924/01013 , H01L2924/12042 , H01L2924/12043 , H01L2924/15788 , H04N5/335 , H01L2924/00
Abstract: A bonding pad structure for an image sensor device and a method of fabrication thereof. The image sensor device has a radiation-sensor region including a substrate and a radiation detection device, and a bonding pad region including the bonding pad structure. The bonding pad structure includes: an interconnect layer; an interlayer dielectric layer (IDL), both layers extending from under the substrate into the bonding pad region; an isolation layer formed on IDL; a conductive pad having a planar portion and one or more bridging portions extending perpendicularly from the planar portion, through the IDL and isolation layers, and to the interconnect layer; and a plurality of non-conducting stress-releasing structures disposed between the isolation layer and the conductive pad in such a way to adjoin its planar and the bridging portions together for releasing potential pulling stress applied thereon and preventing a conductive pad peeling.
Abstract translation: 一种用于图像传感器装置的焊盘结构及其制造方法。 图像传感器装置具有包括基板和放射线检测装置的辐射传感器区域和包括接合焊盘结构的焊盘区域。 接合焊盘结构包括：互连层; 层间电介质层（IDL），从衬底下延伸到焊盘区域的两层; 在IDL上形成隔离层; 具有平面部分和从平面部分垂直延伸穿过IDL和隔离层以及互连层的一个或多个桥接部分的导电焊盘; 以及设置在隔离层和导电焊盘之间的多个非导电应力释放结构，以将其平面和桥接部分邻接在一起，以释放施加在其上的潜在的拉应力并防止导电垫剥离。
-
公开(公告)号：US20160148970A1
公开(公告)日：2016-05-26
申请号：US14554649
申请日：2014-11-26
Inventor： YUN-WEI CHENG , TSUNG-HAN TSAI , CHUN-HAO CHOU , KUO-CHENG LEE , VOLUME CHIEN , YUNG-LUNG HSU
IPC: H01L27/146
CPC classification number: H01L27/14645 , H01L27/14612 , H01L27/14621 , H01L27/1463 , H01L27/1464 , H01L27/14685 , H01L27/14689
Abstract: Some embodiments of the present disclosure provide a method of manufacturing a back side illuminated (BSI) image sensor. The method includes receiving a semiconductive substrate; forming a photosensitive element at a front side of the semiconductive substrate; forming a transistor coupled to the photosensitive element; forming a recess at a back side of the semiconductive substrate; forming a first dielectric layer lining to a side portion of the recess and over the back side of the semiconductor substrate; covering a conductive material over the first dielectric layer and filling in the recess; forming a conductive column on top of the recess by patterning the conductive material; and forming a second dielectric layer covering the conductive column and the first dielectric layer.
Abstract translation: 本公开的一些实施例提供制造背面照明（BSI）图像传感器的方法。 该方法包括接收半导体衬底; 在半导体基板的前侧形成感光元件; 形成耦合到所述感光元件的晶体管; 在所述半导体基板的背面形成凹部; 在所述凹部的侧部和所述半导体衬底的背面上形成衬里的第一电介质层; 覆盖所述第一电介质层上的导电材料并填充在所述凹部中; 通过图案化导电材料在凹部的顶部上形成导电柱; 以及形成覆盖所述导电柱和所述第一介电层的第二介电层。
-
公开(公告)号：US20160005781A1
公开(公告)日：2016-01-07
申请号：US14322469
申请日：2014-07-02
Inventor： HUAN-EN LIN , SHIU-KO JANGJIAN , VOLUME CHIEN , FU-TSUN TSAI , YUNG-LUNG HSU , CHI-CHERNG JENG
IPC: H01L27/146
CPC classification number: H01L27/14643 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14689
Abstract: A backside illuminated (BSI) image sensor device includes: a first substrate including a front side and a back side; a second substrate bonded with the first substrate on the front side; and a blocking layer between the first substrate and the second substrate. The first substrate includes an image sensor, and the image sensor is configured to collect incident light entering from the back side. The second substrate includes a circuit coupled with the image sensor. The blocking layer is configured to block radiation induced by the circuit.
Abstract translation: 背面照明（BSI）图像传感器装置包括：第一基板，包括前侧和后侧; 在前侧与第一基板结合的第二基板; 以及在第一基板和第二基板之间的阻挡层。 第一基板包括图像传感器，并且图像传感器被配置为收集从背面进入的入射光。 第二基板包括与图像传感器耦合的电路。 阻挡层被配置为阻挡由电路引起的辐射。
-
公开(公告)号：US20150049229A1
公开(公告)日：2015-02-19
申请号：US13968764
申请日：2013-08-16
Inventor： YI-SHENG LIU , YUN-WEI CHENG , VOLUME CHIEN , CHI-CHERNG JENG , HSIN-CHI CHEN
IPC: H04N5/374 , H01L27/146 , H01L31/18
CPC classification number: H04N5/374 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14685
Abstract: An image sensor comprises an image sensing substrate that in turns includes an image sensing device, a first sensor pixel, a second sensor pixel, and a divider. The divider is between the first sensor pixel and the second sensor pixel.
Abstract translation: 图像传感器包括图像感测基板，该图像感测基板又包括图像感测装置，第一传感器像素，第二传感器像素和分割器。 分频器位于第一传感器像素和第二传感器像素之间。
-
-
-
-
-
-
-
-
Search Results
9
records
(took 0.015 seconds)
