公开(公告)号：US20250126912A1

公开(公告)日：2025-04-17

申请号：US19001621

申请日：2024-12-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： MING-HSIEN YANG ,  WEN-I HSU ,  KUAN-FU LU ,  FENG-CHI HUNG ,  JEN-CHENG LIU ,  DUN-NIAN YAUNG ,  CHUN-HAO CHOU ,  KUO-CHENG LEE

IPC: H10F39/00 ,  H10F39/18

Abstract: A semiconductor image-sensing structure includes a reflective grid and a reflective shield disposed over a substrate. The reflective grid is disposed in a first region, and the reflective shield is disposed in a second region separated from the first region. A thickness of the reflective shield is greater than a thickness of the reflective grid.

公开(公告)号：US20230275109A1

公开(公告)日：2023-08-31

申请号：US17587262

申请日：2022-01-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： MING-HSIEN YANG ,  WEN-I HSU ,  KUAN-FU LU ,  FENG-CHI HUNG ,  JEN-CHENG LIU ,  DUN-NIAN YAUNG ,  CHUN-HAO CHOU ,  KUO-CHENG LEE

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14685 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14645

Abstract: A semiconductor image sensing structure includes a substrate having a first region and a second region, a metal grid in the first region, and a hybrid metal shield in the second region. The hybrid metal shield includes a first metallization layer, a second metallization layer disposed over the first metallization layer, a third metallization layer disposed over the second metallization layer, and a fourth metallization layer disposed over the third metallization layer. An included angle of the second metallization layer is between approximately 40° and approximately 60°.