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Patent Agency Ranking
公开(公告)号：US20240050987A1
公开(公告)日：2024-02-15
申请号：US17819044
申请日：2022-08-11
Inventor： MING-HSIEN YANG , CHUN-HAO CHOU , KUO-CHENG LEE , SHENG KAI YEH
CPC classification number: B06B1/0292 , B06B1/0666 , B06B2201/76 , A61B5/0095
Abstract: A semiconductor device and a method are provided. The semiconductor device includes a first semiconductor component, a bonding layer and a second semiconductor component. The first semiconductor component includes a first transistor formed on a substrate and a second transistor formed on the substrate and separated from the first transistor. The bonding layer is provided on the first semiconductor component. The second semiconductor component is provided on the bonding layer and includes an acoustic transducer. The acoustic transducer is controlled by the first transistor and the second transistor to execute a photoacoustic sensing. The acoustic transducer comprises a space gap and a least a portion of the space gap is surrounded by the bonding layer.
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公开(公告)号：US20240055452A1
公开(公告)日：2024-02-15
申请号：US17818387
申请日：2022-08-09
Inventor： MING-HSIEN YANG , CHUN-LIANG LU , CHUN-HAO CHOU , KUO-CHENG LEE
IPC: H01L27/146
CPC classification number: H01L27/1462 , H01L27/14645 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14685
Abstract: A semiconductor image sensing structure includes a substrate, an isolation structure, an anti-reflection structure, at least one optical element and a transistor. The substrate has at least one photodiode region. The isolation structure is disposed in the substrate and surrounds the photodiode region. The anti-reflection structure covers the photodiode region. The optical element is disposed over the anti-reflection structure and corresponds to the photodiode region. The transistor is disposed under the photodiode region.
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公开(公告)号：US20250126912A1
公开(公告)日：2025-04-17
申请号：US19001621
申请日：2024-12-26
Inventor： MING-HSIEN YANG , WEN-I HSU , KUAN-FU LU , FENG-CHI HUNG , JEN-CHENG LIU , DUN-NIAN YAUNG , CHUN-HAO CHOU , KUO-CHENG LEE
Abstract: A semiconductor image-sensing structure includes a reflective grid and a reflective shield disposed over a substrate. The reflective grid is disposed in a first region, and the reflective shield is disposed in a second region separated from the first region. A thickness of the reflective shield is greater than a thickness of the reflective grid.
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公开(公告)号：US20250008244A1
公开(公告)日：2025-01-02
申请号：US18344807
申请日：2023-06-29
Inventor： MING-HSIEN YANG , CHIA-YU WEI , CHUN-HAO CHOU , KUO-CHENG LEE , CHUNG-LIANG CHENG , SHENG-CHAU CHEN
IPC: H04N25/79
Abstract: A stacked CMOS image sensor (CIS) structure is provided. The stacked CIS structure comprises a first die, a second die and a third die. The first die comprises a photodiode, a transfer gate, a selective conversion gain (SCG) switch, a reset switch, a floating node diffusion capacitor and a SCG diffusion capacitor. The second die comprises a source follower transistor and a row select switch. The third die comprises an image sensing circuit electrically connected to the third floating node.
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公开(公告)号：US20230275109A1
公开(公告)日：2023-08-31
申请号：US17587262
申请日：2022-01-28
Inventor： MING-HSIEN YANG , WEN-I HSU , KUAN-FU LU , FENG-CHI HUNG , JEN-CHENG LIU , DUN-NIAN YAUNG , CHUN-HAO CHOU , KUO-CHENG LEE
IPC: H01L27/146
CPC classification number: H01L27/14623 , H01L27/14685 , H01L27/14605 , H01L27/14621 , H01L27/14645
Abstract: A semiconductor image sensing structure includes a substrate having a first region and a second region, a metal grid in the first region, and a hybrid metal shield in the second region. The hybrid metal shield includes a first metallization layer, a second metallization layer disposed over the first metallization layer, a third metallization layer disposed over the second metallization layer, and a fourth metallization layer disposed over the third metallization layer. An included angle of the second metallization layer is between approximately 40° and approximately 60°.
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