公开(公告)号：US20240030256A1

公开(公告)日：2024-01-25

申请号：US17813947

申请日：2022-07-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： WEI-LIN CHEN ,  YU-CHENG TSAI ,  CHUN-HAO CHOU ,  KUO-CHENG LEE

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14649 ,  H01L27/1464 ,  H01L27/14614

Abstract: A semiconductor image sensing structure includes a semiconductor substrate having a front side and a back side, a pixel sensor disposed in the semiconductor substrate, a transistor disposed over the front side of the semiconductor substrate, and a reflective structure disposed over the front side of the semiconductor substrate. A gate structure of the transistor and the reflective structure include a same material. A top surface of the gate structure of the transistor and a top surface of the reflective structure are aligned with each other.