公开(公告)号：US20250155804A1

公开(公告)日：2025-05-15

申请号：US18508423

申请日：2023-11-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Min-Hung TSAI ,  Siao-Shan WANG ,  Chen-Yu LIU ,  Ching-Yu CHANG

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/025 ,  G03F7/031 ,  G03F7/039 ,  G03F7/20

Abstract: A photoresist composition comprises a solvent and a polymer. The polymer is dissolved in the solvent. The photoresist composition further comprises a first additive. The first additive is dissolved in the solvent. The first additive is made of a core structure and one or more radical-active functional groups connected to the core structure.

公开(公告)号：US20240377739A1

公开(公告)日：2024-11-14

申请号：US18782565

申请日：2024-07-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Siao-Shan WANG ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/038 ,  C08L25/08 ,  C08L33/10 ,  C08L33/16 ,  G03F7/004 ,  G03F7/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/40

Abstract: A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group.

公开(公告)号：US20230393467A1

公开(公告)日：2023-12-07

申请号：US18231444

申请日：2023-08-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY. LTD.

Inventor： Siao-Shan WANG ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/027 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20

CPC classification number: G03F7/027 ,  G03F7/0045 ,  G03F7/168 ,  G03F7/2004 ,  C08L33/10

Abstract: A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group.