公开(公告)号：US11430611B2

公开(公告)日：2022-08-30

申请号：US17165229

申请日：2021-02-02

Applicant: TDK CORPORATION

Inventor： Yuuki Aburakawa ,  Tatsuo Namikawa ,  Akiyasu Iioka ,  Atsuo Matsutani ,  Hitoshi Saita ,  Kazuhiro Yoshikawa

IPC: H01G4/33 ,  H01G4/008 ,  H01G4/012 ,  H01G4/30 ,  H01L23/498 ,  H01L23/64 ,  H05K1/16

Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. The upper electrode layer has a connection part connected to the lower electrode layer through the through hole and an electrode part insulated from the connection part by a slit. A surface of the lower electrode layer that contacts the connection part through the through hole includes an annular area positioned along an inner wall surface of the through hole and a center area surrounded by the annular area. The annular area is lower in surface roughness than the center area.

公开(公告)号：US10755854B2

公开(公告)日：2020-08-25

申请号：US16145231

申请日：2018-09-28

Applicant: TDK Corporation

Inventor： Masahiro Hiraoka ,  Hitoshi Saita ,  Suguru Andoh ,  Atsuo Matsutani

IPC: H01G4/01 ,  H01G4/12 ,  H01G4/33 ,  H01G4/005 ,  H01G7/06

Abstract: Provided is a thin film capacitor that includes: a first electrode layer having a principal surface in which a plurality of recesses are provided; a dielectric layer laminated on the principal surface of the first electrode layer; and a second electrode layer laminated on the dielectric layer. When a depth of the recess is defined as FL and a thickness of the dielectric layer is defined as T, H/T is 0.05 or more and 0.5 or less.

公开(公告)号：US20210265116A1

公开(公告)日：2021-08-26

申请号：US17165229

申请日：2021-02-02

Applicant: TDK CORPORATION

Inventor： Yuuki ABURAKAWA ,  Tatsuo Namikawa ,  Akiyasu Iioka ,  Atsuo Matsutani ,  Hitoshi Saita ,  Kazuhiro Yoshikawa

IPC: H01G4/33 ,  H01G4/30 ,  H01G4/012 ,  H05K1/16 ,  H01L23/64 ,  H01L23/498 ,  H01G4/008

Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. The upper electrode layer has a connection part connected to the lower electrode layer through the through hole and an electrode part insulated from the connection part by a slit. A surface of the lower electrode layer that contacts the connection part through the through hole includes an annular area positioned along an inner wall surface of the through hole and a center area surrounded by the annular area. The annular area is lower in surface roughness than the center area.

公开(公告)号：US10472250B2

公开(公告)日：2019-11-12

申请号：US14934988

申请日：2015-11-06

Applicant: TDK CORPORATION

Inventor： Masahiro Oishi ,  Atsuo Matsutani ,  Ryu Ohta

IPC: H01L41/18 ,  C01G33/00 ,  H01L41/08 ,  H01L41/113 ,  H01L41/187 ,  H01L41/09 ,  B41J2/14 ,  G01N21/65 ,  H01L41/316

Abstract: A piezoelectric layer made of potassium sodium niobate which is a perovskite type compound represented by the formula ABO3, wherein, in the Raman spectroscopy measurement of the piezoelectric layer which is performed while the piezoelectric layer is rotated in the in-plane direction, the measured intensity of the lattice vibration region of the perovskite type compound in the Raman spectrum obtained in polarized Raman spectroscopy measurement (yx) has a periodicity of approximately 90°, wherein, the polarized Raman spectroscopy measurement (yx) is performed while the piezoelectric layer is rotated in the in-plane direction and Raman scattering light is polarized in a direction perpendicular to that of the incident light.