ELECTRONIC DEVICE SHEET
    3.
    发明申请

    公开(公告)号:US20170110250A1

    公开(公告)日:2017-04-20

    申请号:US15288216

    申请日:2016-10-07

    CPC classification number: H01G4/33 H01G2/14 H01G4/005 H01G4/1227

    Abstract: The electronic device sheet comprises a pair of electrode layers, a dielectric layer provided between the pair of electrode layers, and one or more insulation patch members provided on one of principal surfaces of the dielectric layer, wherein the number of the insulation patch members is 1 or more and 1000 or less per 1 cm2 of the principal surface, and the total area of the insulation patch members is 10 μm2 or larger and 3 mm2 or smaller per 1 cm2 of the principal surface.

    THIN FILM CAPACITOR
    5.
    发明申请
    THIN FILM CAPACITOR 有权
    薄膜电容器

    公开(公告)号:US20160217931A1

    公开(公告)日:2016-07-28

    申请号:US15006366

    申请日:2016-01-26

    CPC classification number: H01G4/33 H01G4/1227 H01G4/1236

    Abstract: A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer, the columnar crystal has a perovskite crystal structure represented by AyBO3, an element A is at least one of Ba, Ca, Sr, and Pb, an element B is at least one of Ti, Zr, Sn, and Hf, y≦0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Al per 100 mol of AyBO3.

    Abstract translation: 薄膜电容器包括基材,设置在基材上的电介质层和设置在电介质层上的上电极层。 电介质层包括相对于上电极层的表面沿法线方向延伸的多个柱状晶体,柱状晶体具有由AyBO 3表示的钙钛矿晶体结构,元素A为Ba,Ca, Sr和Pb,元素B为Ti,Zr,Sn和Hf中的至少一种,y≤0.995,并且每100摩尔AyBO 3的电介质层含有0.05〜2.5摩尔的Al。

    THIN FILM CAPACITOR
    6.
    发明申请
    THIN FILM CAPACITOR 有权
    薄膜电容器

    公开(公告)号:US20130258545A1

    公开(公告)日:2013-10-03

    申请号:US13796986

    申请日:2013-03-12

    CPC classification number: H01G4/306 H01G4/232 H01G4/33 H01G4/38

    Abstract: A thin film capacitor includes two or more of dielectric body layers that are alternately laminated on an under-electrode, and internal electrode layers that are laminated between the dielectric body layers, and are exposed off the dielectric body layer, and a connection electrode that is electrically connected to the internal electrode layers via the exposed portion of the internal electrode layers, A relationship between an average grain size D of crystal grains in the internal electrode layers and an average grain size d of crystal grains in the connection electrode is D>d.

    Abstract translation: 薄膜电容器包括交替层压在底电极上的两个或更多个介电体层,以及叠层在电介质体层之间并从电介质体层露出的内部电极层,以及连接电极, 通过内部电极层的露出部与内部电极层电连接,内部电极层的晶粒的平均粒径D与连接电极的晶粒的平均粒径d之间的关系为D> d 。

    METHOD OF MANUFACTURING THIN FILM CAPACITOR AND THIN FILM CAPACITOR

    公开(公告)号:US20130128410A1

    公开(公告)日:2013-05-23

    申请号:US13675670

    申请日:2012-11-13

    Abstract: A method of manufacturing a thin film capacitor, having: a base electrode; dielectric layers consecutively deposited on the base electrode; an internal electrode deposited between the dielectric layers; an upper electrode deposited opposite the base electrode with the dielectric layers and the internal electrode being interposed therebetween; and a cover layer deposited on the upper electrode, has depositing an upper electrode layer which is to be the upper electrode, and a cover film which is to be the cover layer on the unsintered dielectric film which is to be the dielectric layer, to fabricate a lamination component, and sintering the lamination component.

    THIN FILM CAPACITOR, ITS MANUFACTURING METHOD, AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE THIN FILM CAPACITOR

    公开(公告)号:US20230335579A1

    公开(公告)日:2023-10-19

    申请号:US18012553

    申请日:2020-12-24

    CPC classification number: H01L28/84 H01L25/16

    Abstract: A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; a second electrode layer contacting the dielectric film without contacting the metal foil; and an insulating member provided on the upper surface of the metal foil to surround the first and second electrode layers. The metal foil has an outer peripheral area which is positioned outside an area surrounded by the insulating member and which is not covered with the first and second electrode layers. A height of the electrode layer is equal to or higher than a height of the insulating member. This makes the outer peripheral portion of the thin film capacitor have a step-like shape.

    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME

    公开(公告)号:US20230260713A1

    公开(公告)日:2023-08-17

    申请号:US18012820

    申请日:2020-12-24

    CPC classification number: H01G4/33 H01G4/228 H01G4/005 H01G4/06

    Abstract: To provide a thin film capacitor having high adhesion with respect to a circuit substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. An angle θa formed by the other main surface of the metal foil and a side surface thereof is more than 20° and less than 80°. The side surface is thus tapered at an angle of more than 20° and less than 80°, so that it is possible to suppress warpage and to enhance adhesion with respect to a multilayer substrate when the thin film capacitor is embedded in the multilayer substrate.

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