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公开(公告)号:US20190164904A1
公开(公告)日:2019-05-30
申请号:US16185596
申请日:2018-11-09
Applicant: TDK Corporation
Inventor: Masashi KATSUMATA , Yoshihiro SUZUKI , Reo HANADA
IPC: H01L23/552 , H01L25/16 , H01L23/31 , H01L23/538 , H01L23/498 , H01L21/48
Abstract: Disclosed herein is a multilayer circuit board that includes a plurality of conductor layers laminated with insulating layers interposed therebetween. The plurality of conductor layers include a first conductor layer, a second conductor layer, and a first shield layer disposed between the first and second conductor layers. The first shield layer is smaller in conductor thickness than the first and second conductor layers and is connected to none of the plurality of conductor layers within its surface.
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2.
公开(公告)号:US20150145145A1
公开(公告)日:2015-05-28
申请号:US14555325
申请日:2014-11-26
Applicant: TDK Corporation
Inventor: Kazutoshi TSUYUTANI , Masashi KATSUMATA
CPC classification number: H01L24/20 , H01L21/561 , H01L23/3121 , H01L23/5226 , H01L23/544 , H01L24/03 , H01L24/05 , H01L24/83 , H01L2223/54426 , H01L2223/54486 , H01L2224/04105 , H01L2224/05647 , H01L2224/18 , H01L2224/2919 , H01L2224/32225 , H01L2224/4918 , H01L2224/83132 , H01L2924/01079 , H01L2924/12042 , H05K1/185 , H01L2924/00 , H01L2924/00014
Abstract: Disclosed herein is an IC embedded substrate that includes a core substrate having an opening, an IC chip provided in the opening, a lower insulating layer, and upper insulating layer. The IC chip and the core substrate is sandwiched between the lower insulating layer and the upper insulating layer. The upper insulating layer is formed in such a way as to fill a gap between a side surface of the IC chip and an inner peripheral surface of the opening of the core substrate. A first distance from the upper surface of the IC chip to an upper surface of the upper insulating layer is shorter than a second distance from the upper surface of the core substrate to the upper surface of the upper insulating layer.
Abstract translation: 这里公开了一种IC嵌入式基板,其包括具有开口的芯基板,设置在开口中的IC芯片,下绝缘层和上绝缘层。 IC芯片和芯基板夹在下绝缘层和上绝缘层之间。 上绝缘层以填充IC芯片的侧表面和芯基板的开口的内周表面之间的间隙的方式形成。 从IC芯片的上表面到上绝缘层的上表面的第一距离短于从芯基板的上表面到上绝缘层的上表面的第二距离。
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