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    Metallization system for semiconductors
    1.
    发明授权
    Metallization system for semiconductors 失效
    用于半导体的金属化系统

    公开(公告)号：US3654526A

    公开(公告)日：1972-04-04

    申请号：US3654526D

    申请日：1970-05-19

    Applicant: TEXAS INSTRUMENTS INC

    Inventor： CUNNINGHAM JAMES A ,  FULLER CLYDE R ,  HOOPER ROBERT C ,  WAKEFIELD ROBERT H

    IPC: H01L21/00 ,  H01L23/482 ,  H01L23/522 ,  H01L23/532 ,  H01L5/02

    CPC classification number: H01L23/53295 ,  H01L21/00 ,  H01L23/4822 ,  H01L23/522 ,  H01L23/5329 ,  H01L24/01 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/00

    Abstract: A metallization system for semiconductor devices includes a first layer of aluminum a part of which is in ohmic contact with a silicon substrate and devices thereon, the other part of which overlies an insulating layer. A second layer of molybdenum is deposited on the aluminum layer. The aluminum and molybdenum are photoetched into a predetermined pattern which ohmically contacts the silicon and overlies an insulating layer, usually of silicon dioxide. Thereafter a variety of techniques and lead systems can be used. For example, a second layer of insulating material can be applied over the first level aluminum-molybdenum metallization system and the first layer of insulating material. The second level of insulating material can then be selectively etched to expose predetermined portions of the first level lead system. Thereafter, beam leads can be attached to the first level metallization system; or bonding pads can be formed in ohmic contact with the first level metallization system. Alternatively, a second level metallization system can be utilized where it becomes necessary to conductively connect various components on the semiconductor device by lead cross-overs. A third layer of insulating material can then be applied on top of the second level metallization system. After selective etching of the second level insulating material, beam leads, bonding pads or even a third level metallization system can be applied.

    Abstract translation: 用于半导体器件的金属化系统包括第一层铝，其一部分与硅衬底和其上的器件欧姆接触，其另一部分覆盖绝缘层。 第二层钼沉积在铝层上。 铝和钼被光刻成预定的图案，其与硅接触并覆盖绝缘层，通常为二氧化硅。 此后可以使用各种技术和引导系统。 例如，可以在第一级铝 - 钼金属化系统和第一绝缘材料层上施加第二层绝缘材料。 然后可以选择性地蚀刻第二级绝缘材料以暴露第一级引线系统的预定部分。 此后，光束引线可以附接到第一级金属化系统; 或者接合焊盘可以与第一级金属化系统欧姆接触形成。 或者，可以利用第二级金属化系统，其中需要通过引线交叉导电地连接半导体器件上的各种部件。 然后可以将第三层绝缘材料施加在第二层金属化系统的顶部上。 在选择性地蚀刻第二级绝缘材料之后，可以应用光束引线，焊盘或甚至第三级金属化系统。

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