公开(公告)号：US20190386627A1

公开(公告)日：2019-12-19

申请号：US16551757

申请日：2019-08-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Byron Neville BURGESS ,  William Robert KRENIK ,  Stuart M. JACOBSEN

IPC: H03H3/02 ,  H03H9/02 ,  H03H9/17 ,  H03H9/10

Abstract: A method of forming a resonator includes forming top and bottom dielectric structures over a substrate. A piezoelectric layer is formed between the top and bottom dielectric structures. A bottom electrode is formed between the piezoelectric layer and the bottom dielectric structure, and a top electrode is formed between the piezoelectric layer and the top dielectric structure. A metal layer is formed over the top dielectric structure and is patterned, thereby forming a first contact pad making electrical contact to the top electrode, a second contact pad making electrical contact with the bottom electrode, and a mass bias located over the top dielectric structure.

公开(公告)号：US20160105156A1

公开(公告)日：2016-04-14

申请号：US14970676

申请日：2015-12-16

Applicant: Texas Instruments Incorporated

Inventor： Byron Neville BURGESS ,  William Robert KRENIK ,  Stuart M. JACOBSEN

IPC: H03H3/02

CPC classification number: H03H3/02 ,  H01L23/3107 ,  H01L23/3171 ,  H01L23/49838 ,  H03H9/02102 ,  H03H9/02149 ,  H03H9/1007 ,  H03H9/1057 ,  H03H9/175 ,  Y10T29/42 ,  Y10T29/49171 ,  Y10T29/49172

Abstract: An integrated resonator apparatus includes a piezoelectric resonator and an acoustic Bragg reflector formed adjacent the piezoelectric resonator. The integrated resonator apparatus also includes a mass bias formed over the Bragg reflector on a side of the piezoelectric resonator opposite the piezoelectric resonator.