公开(公告)号：US20140125198A1

公开(公告)日：2014-05-08

申请号：US13670735

申请日：2012-11-07

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Stuart M. JACOBSEN ,  Sridhar RAMASWAMY ,  William Robert KRENIK

IPC分类号： H01L41/02

CPC分类号： H01L27/20 ,  H01L41/29 ,  H03H9/0542 ,  H03H9/175

摘要： A semiconductor device comprises a semiconductor wafer; a piezoelectric resonator formed on the wafer, and an active circuit also formed on the wafer. The active circuit (e.g., a frequency divider) is electrically connected to the piezoelectric resonator.

摘要翻译： 半导体器件包括半导体晶片; 形成在晶片上的压电谐振器和还形成在晶片上的有源电路。 有源电路（例如，分频器）电连接到压电谐振器。

公开(公告)号：US20190386627A1

公开(公告)日：2019-12-19

申请号：US16551757

申请日：2019-08-27

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Byron Neville BURGESS ,  William Robert KRENIK ,  Stuart M. JACOBSEN

IPC分类号： H03H3/02 ,  H03H9/02 ,  H03H9/17 ,  H03H9/10

摘要： A method of forming a resonator includes forming top and bottom dielectric structures over a substrate. A piezoelectric layer is formed between the top and bottom dielectric structures. A bottom electrode is formed between the piezoelectric layer and the bottom dielectric structure, and a top electrode is formed between the piezoelectric layer and the top dielectric structure. A metal layer is formed over the top dielectric structure and is patterned, thereby forming a first contact pad making electrical contact to the top electrode, a second contact pad making electrical contact with the bottom electrode, and a mass bias located over the top dielectric structure.

公开(公告)号：US20150340405A1

公开(公告)日：2015-11-26

申请号：US14816266

申请日：2015-08-03

申请人： Texas Instruments Incorporated

发明人： Stuart M. JACOBSEN ,  Sridhar RAMASWAMY ,  William Robert KRENIK

IPC分类号： H01L27/20 ,  H01L41/29

CPC分类号： H01L27/20 ,  H01L41/29 ,  H03H9/0542 ,  H03H9/175

摘要： A semiconductor device comprises a semiconductor wafer; a piezoelectric resonator formed on the wafer, and an active circuit also formed on the wafer. The active circuit (e.g., a frequency divider) is electrically connected to the piezoelectric resonator.

摘要翻译： 半导体器件包括半导体晶片; 形成在晶片上的压电谐振器和还形成在晶片上的有源电路。 有源电路（例如，分频器）电连接到压电谐振器。

公开(公告)号：US20160105156A1

公开(公告)日：2016-04-14

申请号：US14970676

申请日：2015-12-16

申请人： Texas Instruments Incorporated

发明人： Byron Neville BURGESS ,  William Robert KRENIK ,  Stuart M. JACOBSEN

IPC分类号： H03H3/02

CPC分类号： H03H3/02 ,  H01L23/3107 ,  H01L23/3171 ,  H01L23/49838 ,  H03H9/02102 ,  H03H9/02149 ,  H03H9/1007 ,  H03H9/1057 ,  H03H9/175 ,  Y10T29/42 ,  Y10T29/49171 ,  Y10T29/49172

摘要： An integrated resonator apparatus includes a piezoelectric resonator and an acoustic Bragg reflector formed adjacent the piezoelectric resonator. The integrated resonator apparatus also includes a mass bias formed over the Bragg reflector on a side of the piezoelectric resonator opposite the piezoelectric resonator.