公开(公告)号：US20210089694A1

公开(公告)日：2021-03-25

申请号：US16944890

申请日：2020-07-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Mahalingam Nandakumar ,  Murlidhar Bashyam ,  Alwin Tsao ,  Douglas Newman

IPC: G06F30/367 ,  H01L21/66 ,  G06F30/398 ,  G06F30/392 ,  G06F30/373 ,  H01L29/66 ,  H01L29/423 ,  H01L21/28

Abstract: The present disclosure provides a method for adjusting implant parameter conditions in semiconductor processing by wafer and by wafer zone using in-line measurements from previous operations and a feed-forward computer model. The feed-forward model is based on a sensitivity map of in-line measured data and its effect of electrical performance. Feed-forward computer models that adjust implant parameters by wafer and by zone improve both wafer-to-wafer and within wafer electrical uniformity in semiconductor devices.

公开(公告)号：US11455452B2

公开(公告)日：2022-09-27

申请号：US16944890

申请日：2020-07-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Mahalingam Nandakumar ,  Murlidhar Bashyam ,  Alwin Tsao ,  Douglas Newman

IPC: G06F30/30 ,  G06F30/367 ,  H01L21/66 ,  G06F30/398 ,  G06F30/392 ,  H01L21/28 ,  H01L29/66 ,  H01L29/423 ,  G06F30/373

Abstract: The present disclosure provides a method for adjusting implant parameter conditions in semiconductor processing by wafer and by wafer zone using in-line measurements from previous operations and a feed-forward computer model. The feed-forward model is based on a sensitivity map of in-line measured data and its effect of electrical performance. Feed-forward computer models that adjust implant parameters by wafer and by zone improve both wafer-to-wafer and within wafer electrical uniformity in semiconductor devices.