公开(公告)号：US20210035932A1

公开(公告)日：2021-02-04

申请号：US17009664

申请日：2020-09-01

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Hiroyuki SADA ,  Shoichi IRIGUCHI ,  Genki YANO ,  Luu Thanh NGUYEN ,  Ashok PRABHU ,  Anindya PODDAR ,  Yi YAN ,  Hau NGUYEN

IPC: H01L23/00 ,  H01L21/78

Abstract: A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.