公开(公告)号：US20210035932A1

公开(公告)日：2021-02-04

申请号：US17009664

申请日：2020-09-01

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Hiroyuki SADA ,  Shoichi IRIGUCHI ,  Genki YANO ,  Luu Thanh NGUYEN ,  Ashok PRABHU ,  Anindya PODDAR ,  Yi YAN ,  Hau NGUYEN

IPC: H01L23/00 ,  H01L21/78

Abstract: A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.

公开(公告)号：US20250079247A1

公开(公告)日：2025-03-06

申请号：US18459119

申请日：2023-08-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Makoto SHIBUYA ,  Shoichi IRIGUCHI ,  Hideaki MATSUNAGA

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/495

Abstract: In examples, a semiconductor package comprises a semiconductor die having a device side in which circuitry is formed, and a conductive terminal coupled to the device side of the semiconductor die. The package also comprises a mold compound covering the semiconductor die and at least part of the conductive terminal, where the conductive terminal is exposed to an exterior of the mold compound. The mold compound has top and bottom surfaces and a lateral side extending between the top and bottom surfaces. The lateral side includes a first surface contacting the top surface and extending vertically from the top surface toward the bottom surface. The lateral side also includes a second surface contacting the first surface and extending horizontally away from the semiconductor die. The lateral side also includes a third surface contacting the second surface and extending from the second surface to contact the bottom surface. The third surface has physical marks resulting from a singulation process. The first and second surfaces lack physical marks resulting from the singulation process.