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    Semiconductor Substrate Having Stress-Absorbing Surface Layer
    2.
    发明申请
    Semiconductor Substrate Having Stress-Absorbing Surface Layer 审中-公开

    公开(公告)号：US20190279944A1

    公开(公告)日：2019-09-12

    申请号：US16427150

    申请日：2019-05-30

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Jaimal M. Williamson ,  Nima Shahidi ,  Jose Carlos Arroyo

    IPC: H01L23/00 ,  H01L23/498 ,  H01L23/29 ,  H01L23/31 ,  H01L21/56

    Abstract: An assembly (101) comprising a semiconductor device (110) with solderable bumps (112); a substrate (120) with a layer (130) of a first insulating compound and an underlying metal layer (140) patterned in contact pads (141) and connecting traces (142), the insulating layer having openings (132) to expose the surface (142a) and sidewalls (142b) of underlying traces; the device bumps soldered onto the contact pads, establishing a gap (150) between device and top insulating layer; and a second insulating compound (160) cohesively filling the gap and the second openings, thereby touching the underlying traces, the second insulating compound having a higher glass transition temperature, a higher modulus, and a lower coefficient of thermal expansion than the first insulating compound.

    SEMICONDUCTOR SUBSTRATE HAVING STRESS-ABSORBING SURFACE LAYER
    3.
    发明申请
    SEMICONDUCTOR SUBSTRATE HAVING STRESS-ABSORBING SURFACE LAYER 有权
    具有应力吸收表面层的半导体衬底

    公开(公告)号：US20150021762A1

    公开(公告)日：2015-01-22

    申请号：US14333553

    申请日：2014-07-17

    Applicant: Texas Instruments Incorporated

    Inventor： Jaimal M. Williamson ,  Nima Shahidi ,  Jose Carlos Arroyo

    IPC: H01L23/00

    CPC classification number: H01L21/563 ,  H01L23/295 ,  H01L23/3135 ,  H01L23/49894 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16237 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/014

    Abstract: An assembly (101) comprising a semiconductor device (110) with solderable bumps (112); a substrate (120) with a layer (130) of a first insulating compound and an underlying metal layer (140) patterned in contact pads (141) and connecting traces (142), the insulating layer having openings (132) to expose the surface (142a) and sidewalls (142b) of underlying traces; the device bumps soldered onto the contact pads, establishing a gap (150) between device and top insulating layer; and a second insulating compound (160) cohesively filling the gap and the second openings, thereby touching the underlying traces, the second insulating compound having a higher glass transition temperature, a higher modulus, and a lower coefficient of thermal expansion than the first insulating compound.

    Abstract translation: 包括具有可焊接凸块（112）的半导体器件（110）的组件（101） 具有第一绝缘化合物的层（130）和在接触焊盘（141）和连接迹线（142）中图案化的下面的金属层（140）的衬底（120），所述绝缘层具有开口（132）以暴露表面 （142a）和下面迹线的侧壁（142b）; 所述器件隆起焊接到所述接触焊盘上，在器件和顶部绝缘层之间建立间隙（150）; 以及第二绝缘化合物（160），其粘合地填充所述间隙和所述第二开口，从而接触下面的迹线，所述第二绝缘化合物具有比所述第一绝缘化合物更高的玻璃化转变温度，更高的模量和更低的热膨胀系数 。

    Semiconductor substrate having stress-absorbing surface layer
    4.
    发明授权
    Semiconductor substrate having stress-absorbing surface layer 有权

    公开(公告)号：US10347589B2

    公开(公告)日：2019-07-09

    申请号：US15498461

    申请日：2017-04-26

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Jaimal M. Williamson ,  Nima Shahidi ,  Jose Carlos Arroyo

    IPC: H01L23/48 ,  H01L21/00 ,  H05K7/10 ,  H01L23/00 ,  H01L23/498 ,  H01L23/29 ,  H01L23/31 ,  H01L21/56

    Abstract: An assembly (101) comprising a semiconductor device (110) with solderable bumps (112); a substrate (120) with a layer (130) of a first insulating compound and an underlying metal layer (140) patterned in contact pads (141) and connecting traces (142), the insulating layer having openings (132) to expose the surface (142a) and sidewalls (142b) of underlying traces; the device bumps soldered onto the contact pads, establishing a gap (150) between device and top insulating layer; and a second insulating compound (160) cohesively filling the gap and the second openings, thereby touching the underlying traces, the second insulating compound having a higher glass transition temperature, a higher modulus, and a lower coefficient of thermal expansion than the first insulating compound.

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