公开(公告)号：US20200135841A1

公开(公告)日：2020-04-30

申请号：US16176278

申请日：2018-10-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jeffrey Alan West ,  Byron Lovell Williams ,  John Britton Robbins

IPC: H01L49/02 ,  H01L21/027 ,  H01L23/544 ,  G03F7/16 ,  G03F7/20 ,  G03F1/42

Abstract: A method of fabricating an integrated circuit includes applying photoresist to a MESA dielectric layer of a semiconductor structure, to generate a photoresist layer. The method also includes exposing the photoresist layer with a grayscale mask, to generate an exposed photoresist layer. The photoresist exposed layer includes a thick photoresist pattern in a first region, a thin photoresist pattern in a second region where a height of the thin photoresist pattern is less than half a height of the thick photoresist pattern, and a gap region between the thick photoresist pattern and the thin photoresist pattern.

公开(公告)号：US10354858B2

公开(公告)日：2019-07-16

申请号：US14467688

申请日：2014-08-25

Applicant: Texas Instruments Incorporated

Inventor： Asad Mahmood Haider ,  John Britton Robbins

IPC: B05D3/12 ,  H01L21/02 ,  H01L21/67 ,  B05D1/00 ,  H01L49/02

Abstract: Use of a non-solvent for the edge bead removal of spin-coated PZT or PLZT thinfilms, eliminates swelling of the exposed edges of the PZT or PLZT thinfilms and eliminates delamination and formation of particle defects in subsequent bake and anneal steps.

公开(公告)号：US20140111301A1

公开(公告)日：2014-04-24

申请号：US13655419

申请日：2012-10-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Byron Lovell Williams ,  John Britton Robbins

IPC: H01C1/012 ,  H01L21/02

CPC classification number: H01C7/006 ,  H01C7/06 ,  H01C17/075 ,  H01L23/5228 ,  H01L23/5258 ,  H01L23/647 ,  H01L27/0802 ,  H01L28/24 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The resistance of a thin-film resistor is substantially increased by forming the thin-film resistor to line one or more non-conductive trenches. By lining the one or more non-conductive trenches, the overall length of the resistor is increased while still consuming approximately the same surface area as a conventional resistor.

Abstract translation: 薄膜电阻器的电阻通过将薄膜电阻器形成为一个或多个非导电沟槽线来实质上增加。 通过衬套一个或多个非导电沟槽，电阻器的总长度增加，同时仍然消耗与常规电阻器大致相同的表面积。

公开(公告)号：US10811492B2

公开(公告)日：2020-10-20

申请号：US16176278

申请日：2018-10-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jeffrey Alan West ,  Byron Lovell Williams ,  John Britton Robbins

IPC: H01L21/027 ,  H01L49/02 ,  H01L23/544 ,  G03F7/20 ,  G03F1/42 ,  G03F7/16

Abstract: A method of fabricating an integrated circuit includes applying photoresist to a MESA dielectric layer of a semiconductor structure, to generate a photoresist layer. The method also includes exposing the photoresist layer with a grayscale mask, to generate an exposed photoresist layer. The photoresist exposed layer includes a thick photoresist pattern in a first region, a thin photoresist pattern in a second region where a height of the thin photoresist pattern is less than half a height of the thick photoresist pattern, and a gap region between the thick photoresist pattern and the thin photoresist pattern.

公开(公告)号：US08754741B2

公开(公告)日：2014-06-17

申请号：US13655419

申请日：2012-10-18

Applicant: Texas Instruments Incorporated

Inventor： Byron Lovell Williams ,  John Britton Robbins

IPC: H01C1/012 ,  H01C7/00 ,  H01C17/075 ,  H01C7/06 ,  H01L27/08 ,  H01L23/525

CPC classification number: H01C7/006 ,  H01C7/06 ,  H01C17/075 ,  H01L23/5228 ,  H01L23/5258 ,  H01L23/647 ,  H01L27/0802 ,  H01L28/24 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The resistance of a thin-film resistor is substantially increased by forming the thin-film resistor to line one or more non-conductive trenches. By lining the one or more non-conductive trenches, the overall length of the resistor is increased while still consuming approximately the same surface area as a conventional resistor.

Abstract translation: 薄膜电阻器的电阻通过将薄膜电阻器形成为一个或多个非导电沟槽线来实质上增加。 通过衬套一个或多个非导电沟槽，电阻器的总长度增加，同时仍然消耗与常规电阻器大致相同的表面积。