公开(公告)号：US10535409B2

公开(公告)日：2020-01-14

申请号：US15394095

申请日：2016-12-29

Applicant: Texas Instruments Incorporated

Inventor： Stephen K. Heinrich-Barna ,  Clyde F. Dunn ,  Aswin N. Mehta ,  John H. Macpeak

IPC: G11C16/10 ,  G11C16/34 ,  G11C16/04

Abstract: A disturb management technique for a non-volatile memory including first and second memory cells includes programming the first memory cell by applying a first voltage to a first word line coupled to the first memory cell and a second voltage to a terminal, such as a source terminal, shared by the first memory cell and the second memory cell. A non-zero third voltage having the same sign as the second voltage is applied to a second word line coupled to the second memory cell. The applied non-zero third voltage reduces a tunnel current across a gate oxide that insulates the second word line from a substrate of the second memory cell. This results in the second memory cell having a lower likelihood of being disturbed when programming the first memory cell.

公开(公告)号：US10446563B1

公开(公告)日：2019-10-15

申请号：US15945552

申请日：2018-04-04

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Xiang-Zheng Bo ,  John H. Macpeak ,  Douglas T. Grider

IPC: H01L21/00 ,  H01L27/11521 ,  H01L29/788 ,  H01L29/06 ,  H01L29/49 ,  H01L29/10 ,  H01L21/66 ,  H01L21/311 ,  H01L21/762 ,  H01L21/768 ,  H01L21/28 ,  H01L29/66 ,  H01L29/423 ,  H01L27/02 ,  H01L21/265 ,  G01N21/95 ,  G03F7/20

Abstract: In accordance with some examples, a system comprises a substrate layer having an outer surface. The system also comprises a plurality of trenches extending from the outer surface into the substrate layer. The system then comprises a plurality of active regions with each active region positioned between a different pair of consecutive trenches of the plurality of trenches. The system also comprises a dielectric layer disposed in each of the plurality of trenches and on each of the plurality of active regions. The system then comprises a floating gate layer disposed on the dielectric layer and extending at least partially into each of the plurality of trenches.