公开(公告)号：US11535945B2

公开(公告)日：2022-12-27

申请号：US16731788

申请日：2019-12-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Simon Joshua Jacobs ,  Kathryn Anne Schuck

IPC: B32B15/01 ,  C25D3/12 ,  C25D3/48 ,  C25D7/12 ,  C23C18/08 ,  C23C18/32 ,  C23C18/42 ,  H01L21/768 ,  C23C18/16 ,  C25D3/46

Abstract: A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.

公开(公告)号：US20210198798A1

公开(公告)日：2021-07-01

申请号：US16731788

申请日：2019-12-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Simon Joshua Jacobs ,  Kathryn Anne Schuck

IPC: C25D3/12 ,  C25D3/48 ,  C25D7/12 ,  C23C18/08 ,  C23C18/16 ,  C23C18/32 ,  C23C18/42 ,  H01L21/768

Abstract: A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.

公开(公告)号：US10968099B2

公开(公告)日：2021-04-06

申请号：US16234878

申请日：2018-12-28

Applicant: Texas Instruments Incorporated

Inventor： Kathryn Anne Schuck ,  Kristofer Scott Oberascher

IPC: B81C1/00 ,  B81B7/00

Abstract: A device and method of forming the device that includes a first substrate having a cavity on a bottom surface of the first substrate and MEMS components formed on the first substrate and in the cavity; a second substrate having an upper surface; a first metal bond that extends around a perimeter of the cavity and forming a first connection between the bottom surface of first substrate and the upper surface of the second substrate; a second metal bond that extends around a perimeter of the first metal bond and spaced from the first metal bond, the second metal bond forming a second connection between the bottom surface of the first substrate and the upper surface of the second substrate; where the MEMS components are hermetically sealed between the first and second substrates. A getter agent can be between the first and second metal bonds.

公开(公告)号：US20200207614A1

公开(公告)日：2020-07-02

申请号：US16234878

申请日：2018-12-28

Applicant: Texas Instruments Incorporated

Inventor： Kathryn Anne Schuck ,  Kristofer Scott Oberascher

IPC: B81C1/00 ,  B81B7/00

Abstract: A device and method of forming the device that includes a first substrate having a cavity on a bottom surface of the first substrate and MEMS components formed on the first substrate and in the cavity; a second substrate having an upper surface; a first metal bond that extends around a perimeter of the cavity and forming a first connection between the bottom surface of first substrate and the upper surface of the second substrate; a second metal bond that extends around a perimeter of the first metal bond and spaced from the first metal bond, the second metal bond forming a second connection between the bottom surface of the first substrate and the upper surface of the second substrate; where the MEMS components are hermetically sealed between the first and second substrates. A getter agent can be between the first and second metal bonds.