公开(公告)号：US09734896B2

公开(公告)日：2017-08-15

申请号：US15199167

申请日：2016-06-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Per Torstein Roine ,  Vinod Menezes ,  Mahesh Mehendale ,  Vamsi Gullapalli ,  Premkumar Seetharaman

IPC: G11C7/12 ,  G11C11/419 ,  G11C11/4094 ,  G11C7/10 ,  G11C11/412

CPC classification number: G11C11/419 ,  G11C7/1018 ,  G11C7/1039 ,  G11C7/12 ,  G11C11/4094 ,  G11C11/412

Abstract: In described examples, a memory controller circuit controls accesses to an SRAM circuit. Precharge mode control circuitry outputs: a burst mode enable signal to the SRAM circuit indicating that a series of SRAM cells along a selected row of SRAM cells will be accessed; a precharge first mode signal to the SRAM circuit indicating that a first access along the selected row will occur; and a precharge last mode signal to the SRAM circuit indicating that a last access along the selected row will occur. The SRAM circuit includes an array of SRAM cells arranged in rows and columns to store data. Each SRAM cell is coupled to: a corresponding word line along a row of SRAM cells; and a corresponding pair of complementary bit lines.

公开(公告)号：US20160163379A1

公开(公告)日：2016-06-09

申请号：US14562056

申请日：2014-12-05

Applicant: Texas Instruments Incorporated

Inventor： Per Torstein Roine ,  Vinod Menezes ,  Mahesh Mehendale ,  Vamsi Gullapalli ,  Premkumar Seetharaman

IPC: G11C11/419 ,  G11C11/418

CPC classification number: G11C11/419 ,  G11C7/1018 ,  G11C7/1039 ,  G11C7/12 ,  G11C11/4094 ,  G11C11/412

Abstract: In aspects of the present application, circuitry for storing data is provided including a static random access memory (SRAM) circuit operable to store data in an array of SRAM cell circuits arranged in rows and columns, each SRAM cell coupled to a pair of complementary bit lines disposed along the columns of SRAM cells circuits, and one or more precharge circuits in the SRAM memory circuit coupled to one or more pairs of the complementary bit lines and operable to charge the pairs of complementary bit lines to a precharge voltage, responsive to a precharge control signal. The precharge control signal within the SRAM circuit is operable to cause coupling transistors within the SRAM circuit to couple a pair of complementary bit lines to the precharge voltage responsive to mode signals output from a memory controller circuit external to the SRAM circuit, indicating a bitline precharge is to be performed.

Abstract translation: 在本申请的各方面中，提供了用于存储数据的电路，其中包括静态随机存取存储器（SRAM）电路，其可操作以将数据存储在以行和列布置的SRAM单元电路阵列中，每个SRAM单元耦合到一对互补位 沿着SRAM单元电路的列布置的线以及SRAM存储器电路中的一个或多个预充电电路，其耦合到一对或多对互补位线，并且可操作用于对互补位线对充电至预充电电压， 预充电控制信号。 SRAM电路内的预充电控制信号可操作以使SRAM电路内的耦合晶体管响应于从SRAM电路外部的存储器控​​制器电路输出的模式信号将一对互补位线耦合到预充电电压，指示位线预充电 将被执行。

公开(公告)号：US20250077230A1

公开(公告)日：2025-03-06

申请号：US18643336

申请日：2024-04-23

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Atul Lele ,  Mahesh Mehendale ,  Uri Weinrib ,  Anurag Choudhury

IPC: G06F9/30 ,  G06F9/38

Abstract: Disclosed herein are improvements to instructions and hardware for performing neural network operations. In an embodiment, a processing device includes instruction fetch circuitry, decoder circuitry, and neural network operation circuitry. The instruction fetch circuitry is configured to fetch a neural network instruction from memory that specifies an operation and a set of values that enable sub-circuits of the neural network operation circuitry for use with one or more of the operations of the group of operations and provide the neural network instruction to the decoder circuitry. The decoder circuitry is configured to cause the neural network operation circuitry to perform, based on the operation, a convolution operation using a first sub-circuit of the neural network operation circuitry and a first subset of the set of values or a batch normalization operation using a second sub-circuit of the neural network operation circuitry and a second subset of the set of values.

公开(公告)号：US20250004762A1

公开(公告)日：2025-01-02

申请号：US18344091

申请日：2023-06-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Mahesh Mehendale ,  Uri Weinrib ,  Avi Berkovich

IPC: G06F9/30

Abstract: A system for accelerating binary convolution operations of a neural network includes a set of destination registers, binary convolution circuitry, a decoder coupled to the binary convolution circuitry, and instruction fetch circuitry coupled to the decoder and configured to fetch a binary convolution instruction from an associated memory. The binary convolution instruction specifies input data, weight data, and the set of destination registers for performing a binary convolution operation. The decoder receives the binary convolution instruction from the instruction fetch circuitry and causes the input data and the weight data to be provided to the binary convolution circuitry. In response, the binary convolution circuitry performs the binary convolution operation on the input data and the weight data to produce output data and stores the output data in the set of destination registers.

公开(公告)号：US09384826B2

公开(公告)日：2016-07-05

申请号：US14562056

申请日：2014-12-05

Applicant: Texas Instruments Incorporated

Inventor： Per Torstein Roine ,  Vinod Menezes ,  Mahesh Mehendale ,  Vamsi Gullapalli ,  Premkumar Seetharaman

IPC: G11C7/12 ,  G11C11/419 ,  G11C11/418 ,  G11C11/4094 ,  G11C11/412

CPC classification number: G11C11/419 ,  G11C7/1018 ,  G11C7/1039 ,  G11C7/12 ,  G11C11/4094 ,  G11C11/412

Abstract: In aspects of the present application, circuitry for storing data is provided including a static random access memory (SRAM) circuit operable to store data in an array of SRAM cell circuits arranged in rows and columns, each SRAM cell coupled to a pair of complementary bit lines disposed along the columns of SRAM cells circuits, and one or more precharge circuits in the SRAM memory circuit coupled to one or more pairs of the complementary bit lines and operable to charge the pairs of complementary bit lines to a precharge voltage, responsive to a precharge control signal. The precharge control signal within the SRAM circuit is operable to cause coupling transistors within the SRAM circuit to couple a pair of complementary bit lines to the precharge voltage responsive to mode signals output from a memory controller circuit external to the SRAM circuit, indicating a bitline precharge is to be performed.

Abstract translation: 在本申请的各方面中，提供了用于存储数据的电路，其中包括静态随机存取存储器（SRAM）电路，其可操作以将数据存储在以行和列布置的SRAM单元电路阵列中，每个SRAM单元耦合到一对互补位 沿着SRAM单元电路的列布置的线以及SRAM存储器电路中的一个或多个预充电电路，其耦合到一对或多对互补位线，并且可操作用于对互补位线对充电至预充电电压， 预充电控制信号。 SRAM电路内的预充电控制信号可操作以使SRAM电路内的耦合晶体管响应于从SRAM电路外部的存储器控​​制器电路输出的模式信号将一对互补位线耦合到预充电电压，指示位线预充电 将被执行。

公开(公告)号：US10423414B2

公开(公告)日：2019-09-24

申请号：US14539674

申请日：2014-11-12

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Ajit Deepak Gupte ,  Mahesh Mehendale ,  Navin Acharya ,  Mel Alan Phipps

IPC: G06F9/30 ,  G06F9/48 ,  G06F9/38 ,  G06T1/20

Abstract: In an embodiment, a device including a processor, a plurality of hardware accelerator engines and a hardware scheduler is disclosed. The processor is configured to schedule an execution of a plurality of instruction threads, where each instruction thread includes a plurality of instructions associated with an execution sequence. The plurality of hardware accelerator engines performs the scheduled execution of the plurality of instruction threads. The hardware scheduler is configured to control the scheduled execution such that each hardware accelerator engine is configured to execute a corresponding instruction and the plurality of instructions are executed by the plurality of hardware accelerator engines in a sequential manner. The plurality of instruction threads are executed by plurality of hardware accelerator engines in a parallel manner based on the execution sequence and an availability status of each of the plurality of hardware accelerator engines.

公开(公告)号：US20160314832A1

公开(公告)日：2016-10-27

申请号：US15199167

申请日：2016-06-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Per Torstein Roine ,  Vinod Menezes ,  Mahesh Mehendale ,  Vamsi Gullapalli ,  Premkumar Seetharaman

IPC: G11C11/419 ,  G11C11/418

CPC classification number: G11C11/419 ,  G11C7/1018 ,  G11C7/1039 ,  G11C7/12 ,  G11C11/4094 ,  G11C11/412

Abstract: In described examples, a memory controller circuit controls accesses to an SRAM circuit. Precharge mode control circuitry outputs: a burst mode enable signal to the SRAM circuit indicating that a series of SRAM cells along a selected row of SRAM cells will be accessed; a precharge first mode signal to the SRAM circuit indicating that a first access along the selected row will occur; and a precharge last mode signal to the SRAM circuit indicating that a last access along the selected row will occur. The SRAM circuit includes an array of SRAM cells arranged in rows and columns to store data. Each SRAM cell is coupled to: a corresponding word line along a row of SRAM cells; and a corresponding pair of complementary bit lines.

Abstract translation: 在所述示例中，存储器控制器电路控制对SRAM电路的访问。 预充电模式控制电路输出：到SRAM电路的突发模式使能信号，指示将沿着选定的一行SRAM单元的一系列SRAM单元被访问; 向SRAM电路提供预充电第一模式信号，指示将发生沿着所选行的第一次访问; 以及向SRAM电路提供预充电最后模式信号，指示将发生沿着所选行的最后访问。 SRAM电路包括以行和列排列以存储数据的SRAM单元的阵列。 每个SRAM单元耦合到：沿着一行SRAM单元的相应字线; 和相应的一对互补位线。

公开(公告)号：US20160132329A1

公开(公告)日：2016-05-12

申请号：US14539674

申请日：2014-11-12

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Ajit Deepak Gupte ,  Mahesh Mehendale ,  Navin Acharya ,  Mel Alan Phipps

IPC: G06F9/30 ,  G06F9/48

Abstract: In an embodiment, a device including a processor, a plurality of hardware accelerator engines and a hardware scheduler is disclosed. The processor is configured to schedule an execution of a plurality of instruction threads, where each instruction thread includes a plurality of instructions associated with an execution sequence. The plurality of hardware accelerator engines performs the scheduled execution of the plurality of instruction threads. The hardware scheduler is configured to control the scheduled execution such that each hardware accelerator engine is configured to execute a corresponding instruction and the plurality of instructions are executed by the plurality of hardware accelerator engines in a sequential manner. The plurality of instruction threads are executed by plurality of hardware accelerator engines in a parallel manner based on the execution sequence and an availability status of each of the plurality of hardware accelerator engines.

Abstract translation: 在一个实施例中，公开了一种包括处理器，多个硬件加速器引擎和硬件调度器的设备。 处理器被配置为调度多个指令线程的执行，其中每个指令线程包括与执行序列相关联的多个指令。 多个硬件加速器引擎执行多个指令线程的调度执行。 硬件调度器被配置为控制调度的执行，使得每个硬件加速器引擎被配置为执行相应的指令，并且多个指令由多个硬件加速器引擎以顺序的方式执行。 基于执行顺序和多个硬件加速器引擎中的每一个的可用性状态，多个指令线程以并行方式由多个硬件加速器引擎执行。