公开(公告)号：US20220223731A1

公开(公告)日：2022-07-14

申请号：US17147875

申请日：2021-01-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Sunglyong KIM ,  Seetharaman SRIDHAR ,  Meng-Chia LEE ,  Thomas Eugene GREBS ,  Hong YANG

IPC: H01L29/78 ,  H01L23/482 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L21/765 ,  H01L29/66

Abstract: A semiconductor device includes first, second and third trenches formed in a semiconductor layer having a first conductivity type. Each trench includes a corresponding field plate and a corresponding gate over each field plate. A first body region having a second opposite conductivity type is between the first and second gates, and a second body region having the second conductivity type is located between the second and third gates. A first source region is located over the first body region and a second source region is located over the second body region, the first and second source regions having the first conductivity type. A first gate bus is conductively connected to the first gate and a second gate bus is conductively connected to the second gate, the first gate bus conductively isolated from the second gate bus.

公开(公告)号：US20230101610A1

公开(公告)日：2023-03-30

申请号：US17490918

申请日：2021-09-30

Applicant: Texas Instruments Incorporated

Inventor： Meng-Chia LEE ,  Sunglyong KIM ,  Seetharaman SRIDHAR ,  Sameer PENDHARKAR

IPC: H01L29/78

Abstract: An integrated circuit includes an epitaxial layer over a semiconductor substrate. The epitaxial layer has a first conductivity type and a top surface. First, second and third trenches are located in the epitaxial layer. The trenches respectively include first, second and third field plates. First and second body members are located within the epitaxial layer and have a different second conductivity type. The first body member is located between the first and second trenches, and the second body member is located between the second and third trenches. The first body member extends a first distance between the top surface and the substrate, and the second body member extends a lesser second distance between the top surface and the substrate.