公开(公告)号：US20220223731A1

公开(公告)日：2022-07-14

申请号：US17147875

申请日：2021-01-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Sunglyong KIM ,  Seetharaman SRIDHAR ,  Meng-Chia LEE ,  Thomas Eugene GREBS ,  Hong YANG

IPC: H01L29/78 ,  H01L23/482 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L21/765 ,  H01L29/66

Abstract: A semiconductor device includes first, second and third trenches formed in a semiconductor layer having a first conductivity type. Each trench includes a corresponding field plate and a corresponding gate over each field plate. A first body region having a second opposite conductivity type is between the first and second gates, and a second body region having the second conductivity type is located between the second and third gates. A first source region is located over the first body region and a second source region is located over the second body region, the first and second source regions having the first conductivity type. A first gate bus is conductively connected to the first gate and a second gate bus is conductively connected to the second gate, the first gate bus conductively isolated from the second gate bus.