公开(公告)号：US09864188B2

公开(公告)日：2018-01-09

申请号：US14531842

申请日：2014-11-03

Applicant: Texas Instruments Incorporated

Inventor： Patrick I. Oden ,  James C. Baker ,  Sandra Zheng ,  William C. McDonald ,  Lance W. Barron

IPC: G03F7/20 ,  G02B26/08 ,  B81B3/00

CPC classification number: G02B26/0841 ,  B81B3/00

Abstract: A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD type pixel, by forming a substrate having a non-planar upper surface, and depositing a photoresist spacer layer upon the substrate. The spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the spacer layer. A control member is formed upon the planarized spacer layer, and an image member is formed over the control member. The image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM). The spacer layer is planarized by masking a selected portion of the spacer layer with a grey-scale lithographic mask to remove binge in the selected portion.

公开(公告)号：US09448484B2

公开(公告)日：2016-09-20

申请号：US14531877

申请日：2014-11-03

Applicant: Texas Instruments Incorporated

Inventor： Patrick I. Oden ,  James C. Baker ,  Sandra Zheng ,  William C. McDonald ,  Lance W. Barron

IPC: G03F7/20 ,  G02B26/08 ,  G03F7/36 ,  G03F7/16

CPC classification number: G03F7/36 ,  B81B3/00 ,  G02B26/0841 ,  G03F7/16 ,  G03F7/20

Abstract: A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD-type pixel, by depositing a photoresist spacer layer upon a substrate. The photoresist spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the photoresist spacer layer. A control member is formed upon the shaped spacer layer, and has a sloped portion configured to maximize energy density. An image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM).

Abstract translation: 通过在衬底上沉积光致抗蚀剂隔离层来形成诸如DMD型像素的微机电系统（MEMS）像素的方法。 将光致抗蚀剂间隔层暴露于灰度级光刻掩模以形成光致抗蚀剂间隔层的上表面。 控制构件形成在成形间隔层上，并且具有被配置为使能量密度最大化的倾斜部分。 图像构件被配置为根据控制构件定位以形成空间光调制器（SLM）。

公开(公告)号：US09340415B2

公开(公告)日：2016-05-17

申请号：US14661830

申请日：2015-03-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： James C. Baker ,  Patrick I. Oden ,  Robert S. Black

IPC: B81C1/00

CPC classification number: B81C1/00626 ,  B81B3/001 ,  B81B3/007 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/019 ,  B81C1/00198 ,  B81C1/00404 ,  B81C2201/0198

Abstract: A MEMS device is formed with facing surfaces of a contoured substrate and a layer of material having complementary contours. In one fabrication approach, a first photoresist layer is formed over a substrate. Selected regions of the first photoresist layer are exposed using a patterning mask. The exposed regions of the first photoresist layer are thermally shrunk to pattern the first photoresist layer with a contour. A layer of material is formed over the contoured first photoresist layer.

Abstract translation: MEMS器件形成有轮廓基底和具有互补轮廓的材料层的相对表面。 在一种制造方法中，在衬底上形成第一光致抗蚀剂层。 使用图案掩模使第一光致抗蚀剂层的选定区域曝光。 第一光致抗蚀剂层的曝光区域被热收缩以用轮廓图案化第一光致抗蚀剂层。 在成型的第一光致抗蚀剂层上形成一层材料。

公开(公告)号：US20160124311A1

公开(公告)日：2016-05-05

申请号：US14531877

申请日：2014-11-03

Applicant: Texas Instruments Incorporated

Inventor： Patrick I. Oden ,  James C. Baker ,  Sandra Zheng ,  William C. McDonald ,  Lance W. Barron

IPC: G03F7/36 ,  G03F7/16 ,  G03F7/20 ,  G02B26/08

CPC classification number: G03F7/36 ,  B81B3/00 ,  G02B26/0841 ,  G03F7/16 ,  G03F7/20

Abstract: A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD-type pixel, by depositing a photoresist spacer layer upon a substrate. The photoresist spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the photoresist spacer layer. A control member is formed upon the shaped spacer layer, and has a sloped portion configured to maximize energy density. An image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM).

Abstract translation: 通过在衬底上沉积光致抗蚀剂隔离层来形成诸如DMD型像素的微机电系统（MEMS）像素的方法。 将光致抗蚀剂间隔层暴露于灰度级光刻掩模以形成光致抗蚀剂间隔层的上表面。 控制构件形成在成形间隔层上，并且具有被配置为使能量密度最大化的倾斜部分。 图像构件被配置为根据控制构件定位以形成空间光调制器（SLM）。

公开(公告)号：US20160124302A1

公开(公告)日：2016-05-05

申请号：US14531842

申请日：2014-11-03

Applicant: Texas Instruments Incorporated

Inventor： Patrick I. Oden ,  James C. Baker ,  Sandra Zheng ,  William C. McDonald ,  Lance W. Barron

IPC: G03F7/00

CPC classification number: G02B26/0841 ,  B81B3/00

Abstract: A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD type pixel, by forming a substrate having a non-planar upper surface, and depositing a photoresist spacer layer upon the substrate. The spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the spacer layer. A control member is formed upon the planarized spacer layer, and an image member is formed over the control member. The image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM). The spacer layer is planarized by masking a selected portion of the spacer layer with a grey-scale lithographic mask to remove binge in the selected portion.

Abstract translation: 通过形成具有非平面上表面的衬底以及在衬底上沉积光致抗蚀剂间隔层，形成诸如DMD型像素的微机电系统（MEMS）像素的方法。 将间隔层暴露于灰度级光刻掩模以形成间隔层的上表面。 在平坦化的间隔层上形成控制构件，并且在控制构件上形成图像构件。 图像构件被配置为根据控制构件定位以形成空间光调制器（SLM）。 通过用灰度光刻掩模掩蔽间隔层的选定部分来平坦化间隔层，以去除所选部分中的杂环。

公开(公告)号：US20150266727A1

公开(公告)日：2015-09-24

申请号：US14661830

申请日：2015-03-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： James C. Baker ,  Patrick I. Oden ,  Robert S. Black

IPC: B81C1/00

CPC classification number: B81C1/00626 ,  B81B3/001 ,  B81B3/007 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/019 ,  B81C1/00198 ,  B81C1/00404 ,  B81C2201/0198

Abstract: A MEMS device is formed with facing surfaces of a contoured substrate and a layer of material having complementary contours. In one fabrication approach, a first photoresist layer is formed over a substrate. Selected regions of the first photoresist layer are exposed using a patterning mask. The exposed regions of the first photoresist layer are thermally shrunk to pattern the first photoresist layer with a contour. A layer of material is formed over the contoured first photoresist layer.

Abstract translation: MEMS器件形成有轮廓基底和具有互补轮廓的材料层的相对表面。 在一种制造方法中，在衬底上形成第一光致抗蚀剂层。 使用图案掩模使第一光致抗蚀剂层的选定区域曝光。 第一光致抗蚀剂层的曝光区域被热收缩以用轮廓图案化第一光致抗蚀剂层。 在成型的第一光致抗蚀剂层上形成一层材料。