公开(公告)号：US11545480B2

公开(公告)日：2023-01-03

申请号：US16222670

申请日：2018-12-17

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Sachin Ishwar Gojagoji ,  Raja Selvaraj ,  Jayateerth Pandurang Mathad ,  Sujay Kumar

IPC: H01L27/08 ,  H01L27/02 ,  H01L49/02 ,  H01L27/10 ,  H01L27/118 ,  H01L27/11

Abstract: An integrated circuit includes a substrate layer and a resistor bank in a polysilicon layer disposed on the substrate layer. The resistor bank includes a plurality of resistor elements having a body portion extending in a longitudinal direction. A metal line is disposed in a metal layer above the polysilicon layer to extend transverse to the longitudinal direction and across the body portion of a group of the plurality of resistor elements, thereby forming a first region of the resistor bank and a second region of the resistor bank. The first region is separated from the second region by the metal line. A resistor device having a predetermined resistance includes a subset of the resistor elements in the group electrically coupled together in the second region. The resistor device also includes first and second terminals located in the same first or second region of the resistor bank.