公开(公告)号：US10679938B2

公开(公告)日：2020-06-09

申请号：US16050383

申请日：2018-07-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Kuntal Joardar ,  Min Chu ,  Vijay Krishnamurthy ,  Tikno Harjono ,  Ankur Chauhan ,  Vinayak Hegde ,  Manish Srivastava

IPC: G11C17/00 ,  H01L23/525 ,  G11C17/16 ,  H01L27/112

Abstract: An electronic device comprises a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a first gate, a first terminal, and a second terminal; a first sense transistor integrated in the first semiconductor die, the first sense transistor comprising a second gate and third and fourth terminals, the second gate coupled to the first gate and the fourth terminal coupled to the second terminal; a first resistor integrated in the first semiconductor die, the first resistor has a first temperature coefficient; a second sense transistor integrated in the first semiconductor die, the second sense transistor comprising a third gate and seventh and eighth terminals, the third gate coupled to the first gate and the eighth terminal coupled to the second terminal; and a second resistor integrated in the first semiconductor die, the second resistor has a second temperature coefficient.

公开(公告)号：US10422818B2

公开(公告)日：2019-09-24

申请号：US15859470

申请日：2017-12-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Tikno Harjono ,  Vijay Krishnamurthy ,  Min Chu ,  Kuntal Joardar ,  Gary Eugene Daum ,  Subrato Roy ,  Vinayak Hegde ,  Ankur Chauhan ,  Sathish Vallamkonda ,  Md Abidur Rahman ,  Eung Jung Kim

IPC: G01R15/14 ,  H01L27/06 ,  H03K17/567 ,  H01L25/18 ,  H01L49/02

Abstract: An electronic device comprises: a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a gate, a first terminal, and a second terminal; a sense transistor integrated in the first semiconductor die, the sense transistor comprising a gate coupled to the gate of the power transistor, a first terminal, and a second terminal coupled to the second terminal of the power transistor; and a first resistor integrated in the first semiconductor die, the first resistor comprising a polysilicon section and a metal section coupled to the polysilicon section, the first resistor comprising a first terminal and a second terminal, wherein the first terminal of the first resistor is coupled to the first terminal of the sense transistor.

公开(公告)号：US11977403B2

公开(公告)日：2024-05-07

申请号：US18090861

申请日：2022-12-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Vinayak Hegde ,  Rolly Baradiya ,  Ankur Chauhan

IPC: G05F1/26 ,  G05F1/46 ,  G05F1/56 ,  G05F3/26

CPC classification number: G05F1/561 ,  G05F1/468 ,  G05F3/262

Abstract: In examples, an apparatus includes a FET, first and second voltage-to-current circuits, a current selection circuit, and a comparator. The FET has first and second segments. The first segment has a first gate coupled to the first voltage-to-current circuit, a first source, and a first drain. The second segment has a second gate coupled to the second voltage-to-current circuit, a second source coupled to the first source, and a second drain coupled to the first drain. The current selection circuit has a current selection circuit output and first and second current selection inputs. The first current selection circuit input is coupled to the first voltage-to-current circuit. The second current selection circuit input is coupled to the second voltage-to-current circuit. The comparator has a comparator output and first and second comparator inputs, the first comparator input is coupled to the current selection circuit output.