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    Power transistor coupled to multiple sense transistors
    1.
    发明授权
    Power transistor coupled to multiple sense transistors 有权

    公开(公告)号：US10679938B2

    公开(公告)日：2020-06-09

    申请号：US16050383

    申请日：2018-07-31

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Kuntal Joardar ,  Min Chu ,  Vijay Krishnamurthy ,  Tikno Harjono ,  Ankur Chauhan ,  Vinayak Hegde ,  Manish Srivastava

    IPC: G11C17/00 ,  H01L23/525 ,  G11C17/16 ,  H01L27/112

    Abstract: An electronic device comprises a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a first gate, a first terminal, and a second terminal; a first sense transistor integrated in the first semiconductor die, the first sense transistor comprising a second gate and third and fourth terminals, the second gate coupled to the first gate and the fourth terminal coupled to the second terminal; a first resistor integrated in the first semiconductor die, the first resistor has a first temperature coefficient; a second sense transistor integrated in the first semiconductor die, the second sense transistor comprising a third gate and seventh and eighth terminals, the third gate coupled to the first gate and the eighth terminal coupled to the second terminal; and a second resistor integrated in the first semiconductor die, the second resistor has a second temperature coefficient.

    Power module including a power transistor and two sense transistors
    2.
    发明授权
    Power module including a power transistor and two sense transistors 有权

    公开(公告)号：US11152341B2

    公开(公告)日：2021-10-19

    申请号：US16460870

    申请日：2019-07-02

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Kuntal Joardar ,  Min Chu ,  Vijay Krishnamurthy ,  Tikno Harjono

    IPC: H01L25/07 ,  H01L25/16 ,  G01R31/28 ,  G11C11/4074 ,  H01L29/66

    Abstract: In some examples, an integrated circuit includes a plurality of power modules formed on a substrate, including a first power module located between second and third power modules. The first power module is configured to conduct a load current, and includes a power transistor and first and second sense transistors. The first sense transistor is disposed at a first position between the second power module and a central axis of the first power module, and the second sense transistor is disposed at a second position between the third power module and the central axis. The first sense transistor is configured to conduct a first sense current; and the second sense transistor is configured to conduct a second sense current. The first and second sense transistors are configured to direct the first and second sense currents toward a measurement circuit that is configured to determine a derived sense current indicative of the load current.

    SIMULATION MODELS FOR INTEGRATED FLUXGATE MAGNETIC SENSORS AND OTHER MAGNETIC CIRCUIT COMPONENTS
    3.
    发明申请
    SIMULATION MODELS FOR INTEGRATED FLUXGATE MAGNETIC SENSORS AND OTHER MAGNETIC CIRCUIT COMPONENTS 审中-公开
    集成式磁力传感器和其他磁性电路组件的仿真模型

    公开(公告)号：US20160282421A1

    公开(公告)日：2016-09-29

    申请号：US14667756

    申请日：2015-03-25

    Applicant: Texas Instruments Incorporated ,  Texas Instruments Deutschland GmbH

    Inventor： Vijay Krishnamurthy ,  Tikno Harjono ,  Viola Schaffer

    IPC: G01R33/00 ,  G06F17/50

    CPC classification number: G01R33/0023 ,  G01R33/0064 ,  G06F17/5036

    Abstract: Improved magnetic component models, circuit simulation systems and methods are presented for simulating operation of a modeled magnetic circuit component in which user input defines magnetically susceptible core geometry of the modeled magnetic circuit component, a core model simulates operation of the magnetically susceptible core at least partially according to the geometry of the magnetically susceptible core, and one or more coil models simulate operation of coils wound around the magnetically susceptible core to provide a scalable model with geometry adjustable permeability for fluxgate magnetic sensors, transformers, inductors or other modeled components.

    Abstract translation: 提出了改进的磁性部件模型，电路仿真系统和方法，用于模拟建模的磁路部件的操作，其中用户输入定义了所建模的磁路部件的磁敏感核心几何形状，核心模型至少部分地模拟了磁敏感核心的操作 根据磁敏感核心的几何形状，并且一个或多个线圈模型模拟缠绕在磁敏感核心周围的线圈的操作，以提供具有用于磁通门磁传感器，变压器，电感器或其它建模部件的几何可调磁导率的可伸缩模型。

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